Neuromorphic Binarized Polariton Networks.

The rapid development of artificial neural networks and applied artificial intelligence has led to many applications. However, current software implementation of neural networks is severely limited in terms of performance and energy efficiency. It is believed that further progress requires the development of neuromorphic systems, in which hardware directly mimics the neuronal network structure of a human brain. Here, we propose theoretically and realize experimentally an optical network of nodes performing binary operations. The nonlinearity required for efficient computation is provided by semiconductor microcavities in the strong quantum light-matter coupling regime, which exhibit exciton-polariton interactions. We demonstrate the system performance against a pattern recognition task, obtaining accuracy on a par with state-of-the-art hardware implementations. Our work opens the way to ultrafast and energy-efficient neuromorphic systems taking advantage of ultrastrong optical nonlinearity of polaritons.

Laser beam angular stabilization system based on a compact interferometer and a precise double-wedge deflector.

To increase the laser beam pointing stability required for precise interferometric measurements, we designed an active laser beam angular stabilization system. We used two recently proposed techniques: an interferometric measurement method of laser beam angular deflection which allows compact sensor design and a double wedge-prism beam deflector for precise laser beam steering. Our system provides long-term angular stabilization independently in the horizontal and the vertical planes, providing a hundredfold reduction of the output beam deviations. First, we describe the compact sensor setup with a new measurement algorithm prepared specifically for our stabilization system. Then, the system is introduced, and experimental evaluation is described. The test results show a good performance for the proposed design. We reached a reduction in beam angular deviations amplitude down to 100 nrad/h (in terms of double standard deviation of beam fluctuations).

Double wedge prism based beam deflector for precise laser beam steering.

Aiming to increase laser beam pointing stability required in interferometric measurements, we designed a laser beam deflector intended for active laser beam stabilization systems. The design is based on two wedge-prisms: the deflecting wedge driven by a tilting piezo-platform and the fixed wedge to compensate initial beam deflection. Our design allows linear beam steering, independently in the horizontal or vertical direction, with resolution of less than 1 µrad in a range of more than 100 µrad, and no initial deflection of the beam. Moreover, the ratio of the output beam deflection angle and the wedge tilt angle is less than 0.1; therefore, the noise influence is significantly reduced in comparison to standard mirror-based deflectors. The theoretical analyses support the designing process and can serve as a guide to wedge-prism selection. The experimental results are in agreement with theory and confirm the advantages of the presented double wedge system.

Tunneling in Systems of Coupled Dopant-Atoms in Silicon Nano-devices.

Following the rapid development of the electronics industry and technology, it is expected that future electronic devices will operate based on functional units at the level of electrically active molecules or even atoms. One pathway to observe and characterize such fundamental operation is to focus on identifying isolated or coupled dopants in nanoscale silicon transistors, the building blocks of present electronics. Here, we review some of the recent progress in the research along this direction, with a focus on devices fabricated with simple and CMOS-compatible-processing technology. We present results from a scanning probe method (Kelvin probe force microscopy) which show direct observation of dopant-induced potential modulations. We also discuss tunneling transport behavior based on the analysis of low-temperature I-V characteristics for devices representative for different regimes of doping concentration, i.e., different inter-dopant coupling strengths. This overview outlines the present status of the field, opening also directions toward practical implementation of dopant-atom devices.