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Various electrocatalysts are extensively examined for their ability to selectively produce desired products by electrochemical CO2 reduction reaction (CO2RR). However, an efficient CO2RR electrocatalyst doesn't ensure an effective co-catalyst on the semiconductor surface for photoelectrochemical CO2RR. Herein, Bi2S3 nanorods are synthesized and electrochemically reduced to Bi nanoplates that adhere to the substrates for application in the electrochemical and photoelectrochemical CO2RR. Compared with commercial-Bi, the Bi2S3-derived Bi (S-Bi) nanoplates on carbon paper exhibit superior electrocatalytic activity and selectivity for formate (HCOO-) in the electrochemical CO2RR, achieving a Faradaic efficiency exceeding 93%, with minimal H2 production over a wide potential range. This highly selective S-Bi catalyst is being employed on the Si photocathode to investigate the behavior of electrocatalysts during photoelectrochemical CO2RR. The strong adhesion of the S-Bi nanoplates to the Si nanowire substrate and their unique catalytic properties afford exceptional activity and selectivity for HCOO- under simulated solar irradiation. The selectivity observed in electrochemical CO2RR using the S-Bi catalyst correlates with that seen in the photoelectrochemical CO2RR system. Combined pulsed potential methods and theoretical analyses reveal stabilization of the OCHO* intermediate on the S-Bi catalyst under specific conditions, which is critical for developing efficient catalysts for CO2-to-HCOO- conversion.
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Organic electrodes mainly consisting of C, O, H, and N are promising candidates for advanced batteries. However, the sluggish ionic and electronic conductivity limit the full play of their high theoretical capacities. Here, we integrate the idea of metal-support interaction in single-atom catalysts with π-d hybridization into the design of organic electrode materials for the applications of lithium (LIBs) and potassium-ion batteries (PIBs). Several types of transition metal single atoms (e.g., Co, Ni, Fe) with π-d hybridization are incorporated into the semiconducting covalent organic framework (COF) composite. Single atoms favorably modify the energy band structure and improve the electronic conductivity of COF. More importantly, the electronic interaction between single atoms and COF adjusts the binding affinity and modifies ion traffic between Li/K ions and the active organic units of COFs as evidenced by extensive in situ and ex situ characterizations and theoretical calculations. The corresponding LIB achieves a high reversible capacity of 1,023.0 mA h g-1 after 100 cycles at 100 mA g-1 and 501.1 mA h g-1 after 500 cycles at 1,000 mA g-1. The corresponding PIB delivers a high reversible capacity of 449.0 mA h g-1 at 100 mA g-1 after 150 cycles and stably cycled over 500 cycles at 1,000 mA g-1. This work provides a promising route to engineering organic electrodes.
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Zinc-air battery (ZAB) technology is considered one of the promising candidates to complement the existing lithium-ion batteries for future large-scale high-energy-storage demands. The scientific literature reveals many efforts for the ZAB chemistries, materials design, and limited accounts for cell design principles with apparently superior performances for liquid and solid-state electrolytes. However, along with the difficulty of forming robust solid-electrolyte interphases, the discrepancy in testing methods and assessment metrics severely challenges the realistic evaluation/comparison and commercialization of ZABs. Here, strategies to formulate reversible zinc anodes are proposed and specific cell-level energy metrics (100-500 Wh kg-1 ) and realistic long-cycling operations are realized. Stabilizing anode/electrolyte interfaces results in a cumulative capacity of 25 Ah cm-2 and Coulomb efficiency of >99.9% for 5000 plating/stripping cycles. Using 1-10 Ah scale (≈500 Wh kg-1 at cell level) solid-state zinc-air pouch cells, scale-up insights for Ah-level ZABs that can progress from lab-scale research to practical production are also offered.
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The rational design of wide-temperature operating Zn-air batteries is crucial for their practical applications. However, the fundamental challenges remain; the limitation of the sluggish oxygen redox kinetics, insufficient active sites, and poor efficiency/cycle lifespan. Here we present heterointerface-promoted sulfur-deficient cobalt-tin-sulfur (CoS1-δ/SnS2-δ) trifunctional electrocatalysts by a facile solvothermal solution-phase approach. The CoS1-δ/SnS2-δ displays superb trifunctional activities, precisely a record-level oxygen bifunctional activity of 0.57 V (E1/2 = 0.90 V and Ej=10 = 1.47 V) and a hydrogen evolution overpotential (41 mV), outperforming those of Pt/C and RuO2. Theoretical calculations reveal the modulation of the electronic structures and d-band centers that endorse fast electron/proton transport for the hetero-interface and avoid the strong adsorption of intermediate species. The alkaline Zn-air batteries with CoS1-δ/SnS2-δ manifest record-high power density of 249 mW cm-2 and long-cycle life for >1000 cycles under harsh operations of 20 mA cm-2, surpassing those of Pt/C + RuO2 and previous state-of-the-art catalysts. Furthermore, the solid-state flexible Zn-air battery also displays remarkable performance with an energy density of 1077 Wh kg-1, >690 cycles for 50 mA cm-2, and a wide operating temperature from +80 to -40 °C with 85% capacity retention, which provides insights for practical Zn-air batteries.
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Rational construction of flexible free-standing electrocatalysts featuring long-lasting durability, high efficiency, and wide temperature tolerance under harsh practical operations are fundamentally significant for commercial zinc-air batteries. Here, 3D flexible free-standing bifunctional membrane electrocatalysts composed of covalently cross-linked supramolecular polymer networks with nitrogen-deficient carbon nitride nanotubes are fabricated (referred to as PEMAC@NDCN) by a facile self-templated approach. PEMAC@NDCN demonstrates the lowest reversible oxygen bifunctional activity of 0.61 V with exceptional long-lasting durability, which outperforms those of commercial Pt/C and RuO2. Theoretical calculations and control experiments reveal the boosted electron transfer, electrolyte mass/ion transports, and abundant active surface site preferences. Moreover, the constructed alkaline Zn-air battery with PEMAC@NDCN air-cathode reveals superb power density, capacity, and discharge-charge cycling stability (over 2160 cycles) compared to the reference Pt/C + RuO2. Solid-state Zn-air batteries enable a high power density of 211 mW cm-2, energy density of 1056 Wh kg-1, stable charge-discharge cycling of 2580 cycles for 50 mA cm-2, and wide temperature tolerance from - 40 to 70 °C with retention of 86% capacity compared to room-temperature counterparts, illustrating prospects over harsh operations.
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Structural optimization of microwire arrays is important for the successful demonstration of the practical feasibility of radial junction crystalline silicon (c-Si) solar cells. In this study, we investigated an optimized design of tapered microwire (TMW) arrays to maximize the light absorption of c-Si solar cells, while minimizing the surface recombination, for simultaneously improving the open-circuit voltage and short-circuit current density (Jsc). Finite-difference time-domain simulations confirmed that controlling the spacing between the TMWs at the nanometer scale is more effective for increasing the light absorption than increasing the TMW length. The photogenerated current of a c-Si TMW array with a 200 nm spacing was calculated to be 42.90 mA/cm2, which is close to the theoretical limit of 43.37 mA/cm2 in the 300-1100 nm wavelength range. To experimentally demonstrate the TMW arrays with a nanometer-scale spacing of 200 nm, which cannot be realized by conventional photolithography, we utilized a soft lithography method based on polystyrene beads for patterning a c-Si wafer. The solar cells based on optimized TMW arrays exhibited a Jsc of 42.5 mA/cm2 and power conversion efficiency of 20.5%, which exceed those of the previously reported microwire-based radial junction solar cells.
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Nanowires have promising applications as photodetectors with superior ability to tune absorption with morphology. Despite their high optical absorption, the quantum efficiencies of these nanowire photodetectors remain low due to difficulties in fabricating a shallow junction using traditional doping methods. As an alternative, we report nonconventional radial heterojunction photodiodes obtained by conformal coating of an indium oxide layer on silicon nanowire arrays. The indium oxide layer has a high work function which induces a strong inversion in the silicon nanowire and creates a virtual p-n junction. The resulting nanowire photodetectors show efficient carrier separation and collection, leading to an improvement of quantum efficiency up to 0.2. In addition, by controlling the nanowire radii, the spectral responses of the In2O3/Si nanowire photodetectors are tuned over several visible light wavelengths, creating a multispectral detector. Our approach is promising for the development of highly efficient wavelength-selective photodetectors.
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Molecularly engineered Ir(III) complexes can transfer energy from short-wavelength photons (λ < 450 nm) to photons of longer wavelength (λ > 500 nm), which can enhance the otherwise low internal quantum efficiency (IQE) of crystalline Si (c-Si) nanowire solar cells (NWSCs) in the short-wavelength region. Herein, we demonstrate a phosphorescent energy downshifting system using Ir(III) complexes at short wavelengths (300-450 nm) to diminish the severe surface recombination that occurs in c-Si NWSCs. The developed Ir(III) complexes can be considered promising energy converters because they exhibit superior intrinsic properties such as a high quantum yield, a large Stokes shift, a long exciton diffusion length in crystalline film, and a reproducible synthetic procedure. Using the developed Ir(III) complexes, highly crystalline energy downshifting layers were fabricated by ultrasonic spray deposition to enhance the photoluminescence efficiency by increasing the radiative decay. With the optimized energy downshifting layer, our 1 cm2 c-Si NWSCs with Ir(III) complexes exhibited a higher IQE value for short-wavelength light (300-450 nm) compared with that of bare Si NWSCs without Ir(III) complexes, resulting in a notable increase in the short-circuit current density (from 34.4 mA·cm-2 to 36.5 mA·cm-2).
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Transparent conducting electrodes (TCEs) are considered to be an essential structural component of flexible organic solar cells (FOSCs). Silver nanowire (AgNW) electrodes are widely used as TCEs owing to their excellent electrical and optical properties. The fabrication of AgNW electrodes has faced challenges in terms of forming large uniform interconnected networks so that high conductivity and reproducibility can be achieved. In this study, a simple method for creating an intimate contact between AgNWs that uses cold isostatic pressing (CIP) is demonstrated. This method increases the conductivity of the AgNW electrodes, which enables the fabrication of high-efficiency inverted FOSCs that have a power conversion efficiency of 8.75% on flexible polyethylene terephthalate with no short circuiting occurring as the CIP process minimizes the surface roughness of the AgNW electrode. This allows to achieve 100% manufacturing yield of FOSCs. Furthermore, these highly efficient FOSCs are proven to only be 2.4% less efficient even for an extreme bending radius of R ≈ 1.5 mm, compared with initial efficiency.
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We demonstrate here an embedded metal electrode for highly efficient organic-inorganic hybrid nanowire solar cells. The electrode proposed here is an effective alternative to the conventional bus and finger electrode which leads to a localized short circuit at a direct Si/metal contact and has a poor collection efficiency due to a nonoptimized electrode design. In our design, a Ag/SiO2 electrode is embedded into a Si substrate while being positioned between Si nanowire arrays underneath poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS), facilitating suppressed recombination at the Si/Ag interface and notable improvements in the fabrication reproducibility. With an optimized microgrid electrode, our 1 cm2 hybrid solar cells exhibit a power conversion efficiency of up to 16.1% with an open-circuit voltage of 607 mV and a short circuit current density of 34.0 mA/cm2. This power conversion efficiency is more than twice as high as that of solar cells using a conventional electrode (8.0%). The microgrid electrode significantly minimizes the optical and electrical losses. This reproducibly yields a superior quantum efficiency of 99% at the main solar spectrum wavelength of 600 nm. In particular, our solar cells exhibit a significant increase in the fill factor of 78.3% compared to that of a conventional electrode (61.4%); this is because of the drastic reduction in the metal/contact resistance of the 1 µm-thick Ag electrode. Hence, the use of our embedded microgrid electrode in the construction of an ideal carrier collection path presents an opportunity in the development of highly efficient organic-inorganic hybrid solar cells.
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We developed a unique nano- and microwire hybrid structure by selectively modifying only the tops of microwires using metal-assisted chemical etching. The proposed nano/micro hybrid structure not only minimizes surface recombination but also absorbs 97% of incident light under AM 1.5G illumination, demonstrating outstanding light absorption compared to that of planar (59%) and microwire arrays (85%). The proposed hybrid solar cells with an area of 1 cm(2) exhibit power conversion efficiencies (Eff) of up to 17.6% under AM 1.5G illumination. In particular, the solar cells show a high short-circuit current density (Jsc) of 39.5 mA cm(-2) because of the high light-absorbing characteristics of the nanostructures. This corresponds to an approximately 61.5% and 16.5% increase in efficiency compared to that of a planar silicon solar cell (Eff = 10.9%) and a microwire solar cell (Eff = 15.1%), respectively. Therefore, we expect the proposed hybrid structure to become a foundational technology for the development of highly efficient radial junction solar cells.
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We optimize the thickness of a transparent conducting oxide (TCO) layer, and apply a microscale mesh-pattern metal electrode for high-efficiency a-Si/c-Si heterojunction solar cells. A solar cell equipped with the proposed microgrid metal electrode demonstrates a high short-circuit current density (JSC) of 40.1 mA/cm(2), and achieves a high efficiency of 18.4% with an open-circuit voltage (VOC) of 618 mV and a fill factor (FF) of 74.1% as result of the shortened carrier path length and the decreased electrode area of the microgrid metal electrode. Furthermore, by optimizing the process sequence for electrode formation, we are able to effectively restore the reduction in VOC that occurs during the microgrid metal electrode formation process. This work is expected to become a fundamental study that can effectively improve current loss in a-Si/c-Si heterojunction solar cells through the optimization of transparent and metal electrodes.
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Silicio/química , Electrodos , Metales , Óxidos , Energía Solar , Luz SolarRESUMEN
We demonstrate novel all-back-contact Si nanohole solar cells via the simple direct deposition of molybdenum oxide (MoOx) and lithium fluoride (LiF) thin films as dopant-free and selective carrier contacts (SCCs). This approach is in contrast to conventionally used high-temperature thermal doping processes, which require multistep patterning processes to produce diffusion masks. Both MoOx and LiF thin films are inserted between the Si absorber and Al electrodes interdigitatedly at the rear cell surfaces, facilitating effective carrier collection at the MoOx/Si interface and suppressed recombination at the Si and LiF/Al electrode interface. With optimized MoOx and LiF film thickness as well as the all-back-contact design, our 1 cm(2) Si nanohole solar cells exhibit a power conversion efficiency of up to 15.4%, with an open-circuit voltage of 561 mV and a fill factor of 74.6%. In particular, because of the significant reduction in Auger/surface recombination as well as the excellent Si-nanohole light absorption, our solar cells exhibit an external quantum efficiency of 83.4% for short-wavelength light (â¼400 nm), resulting in a dramatic improvement (54.6%) in the short-circuit current density (36.8 mA/cm(2)) compared to that of a planar cell (23.8 mA/cm(2)). Hence, our all-back-contact design using MoOx and LiF films formed by a simple deposition process presents a unique opportunity to develop highly efficient and low-cost nanostructured Si solar cells.
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A systematic study was conducted into the use of metal-assisted chemical etching (MacEtch) to fabricate vertical Si microwire arrays, with several models being studied for the efficient redox reaction of reactants with silicon through a metal catalyst by varying such parameters as the thickness and morphology of the metal film. By optimizing the MacEtch conditions, high-quality vertical Si microwires were successfully fabricated with lengths of up to 23.2 µm, which, when applied in a solar cell, achieved a conversion efficiency of up to 13.0%. These solar cells also exhibited an open-circuit voltage of 547.7 mV, a short-circuit current density of 33.2 mA/cm(2), and a fill factor of 71.3% by virtue of the enhanced light absorption and effective carrier collection provided by the Si microwires. The use of MacEtch to fabricate high-quality Si microwires therefore presents a unique opportunity to develop cost-effective and highly efficient solar cells.
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Formation of a selective emitter in crystalline silicon solar cells improves photovoltaic conversion efficiency by decoupling emitter regions for light absorption (moderately doped) and metallization (degenerately doped). However, use of a selective emitter in silicon nanowire (Si NW) solar cells is technologically challenging because of difficulties in forming robust Ohmic contacts that interface directly with the top-ends of nanowires. Here we describe a self-aligned selective emitter successfully integrated into an antireflective Si NW solar cell. By one-step metal-assisted chemical etching, NW arrays formed only at light-absorbing areas between top-metal grids while selectively retaining Ohmic contact regions underneath the metal grids. We observed a remarkable â¼40% enhancement in blue responses of internal quantum efficiency, corresponding to a conversion efficiency of 12.8% in comparison to the 8.05% of a conventional NW solar cell.
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The optimal hybridization of photovoltaic (PV) and thermoelectric (TE) devices has long been considered ideal for the efficient harnessing solar energy. Our hybrid approach uses full spectrum solar energy via lossless coupling between PV and TE devices while collecting waste energy from thermalization and transmission losses from PV devices. Achieving lossless coupling makes the power output from the hybrid device equal to the sum of the maximum power outputs produced separately from individual PV and TE devices. TE devices need to have low internal resistances enough to convey photo-generated currents without sacrificing the PV fill factor. Concomitantly, a large number of p-n legs are preferred to drive a high Seebeck voltage in TE. Our simple method of attaching a TE device to a PV device has greatly improved the conversion efficiency and power output of the PV device (~30% at a 15°C temperature gradient across a TE device).
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Traditional Pt counter electrode in quantum-dot-sensitized solar cells suffers from a low electrocatalytic activity and instability due to irreversible surface adsorption of sulfur species incurred while regenerating polysulfide (S(n)(2-)/S(2-)) electrolytes. To overcome such constraints, chemically synthesized Cu(2)ZnSn(S(1-x)Se(x))(4) nanocrystals were evaluated as an alternative to Pt. The resulting chalcogenides exhibited remarkable electrocatalytic activities for reduction of polysulfide (S(n)(2-)) to sulfide (S(2-)), which were dictated by the ratios of S/Se. In this study, a quantum dot sensitized solar cell constructed with Cu(2)ZnSn(S(0.5)Se(0.5))(4) as a counter electrode showed the highest energy conversion efficiency of 3.01%, which was even higher than that using Pt (1.24%). The compositional variations in between Cu(2)ZnSnS(4) (x = 0) and Cu(2)ZnSnSe(4) (x = 1) revealed that the solar cell performances were closely related to a difference in electrocatalytic activities for polysulfide reduction governed by the S/Se ratios.
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We perform a systematic numerical study to characterize the tradeoff between the plasmonic enhancement and optical loss in periodically aligned, silicon nanowire (SiNW) arrays integrated with a silver back reflector (Ag BR). Optimizing the embedded depth of the wire bottoms into a silver reflector achieved a highly efficient SiNW solar cell. Compared to the SiNW solar cell employing a flat back reflector, the embedded depth of ~20 nm resulted in the relative increase of ~5% in ultimate solar cell efficiency.
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A novel stamped hybrid solar cell was proposed using the stamping transfer technique by stamping an active PEDOT:PSS thin layer onto the top of silicon nanowires (SiNWs). Compared to a bulk-type counterpart that fully embeds SiNWs inside PEDOT:PSS, an increase in the photovoltaic efficiency was observed by a factor of â¼4.6, along with improvements in both electrical and optical responses for the stamped hybrid cell. Such improvements for hybrid cells was due to the formation of well-connected and linearly aligned active PEDOT:PSS channels at the top ends of the nanowires after the stamping process. These stamped channels facilitated not only to improve the charge transport, light absorption, but also to decrease the free carriers as well as exciton recombination losses for stamped hybrid solar cells.
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Nanocables/química , Poliestirenos/química , Silicio/química , Energía Solar , Tiofenos/química , Electrodos , Ensayo de Materiales , Microscopía Electrónica de Rastreo , Nanotecnología/métodos , Nanocables/ultraestructura , Polímeros/químicaRESUMEN
Nanodisk-shaped, single-crystal gold silicide heterojunctions were inserted into silicon nanowires during vapor-liquid-solid growth using Au as a catalyst within a specific range of chlorine-to-hydrogen atomic ratio. The mechanism of nanodisk formation has been investigated by changing the source gas ratio of SiCl4 to H2. We report that an over-supply of silicon into the Au-Si liquid alloy leads to highly supersaturated solution and enhances the precipitation of Au in the silicon nanowires due to the formation of unstable phases within the liquid alloy. It is shown that the gold precipitates embedded in the silicon nanowires consisted of a metastable gold silicide. Interestingly, faceting of gold silicide was observed at the Au/Si interfaces, and silicon nanowires were epitaxially grown on the top of the nanodisk by vapor-liquid-solid growth. High resolution transmission electron microscopy confirmed that gold silicide nanodisks are epitaxially connected to the silicon nanowires in the direction of growth direction. These gold silicide nanodisks would be useful as nanosized electrical junctions for future applications in nanowire interconnections.