Tuning Surface Defect States in Sputtered Titanium Oxide Electron Transport Layers for Enhanced Stability of Organic Photovoltaics.

Nonfullerene acceptors (NFAs) have dramatically improved the power conversion efficiency (PCE) of organic photovoltaics (OPV) in recent years; however, their device stability currently remains a bottleneck for further technological progress. Photocatalytic decomposition of nonfullerene acceptor molecules at metal oxide electron transport layer (ETL) interfaces has in several recent reports been demonstrated as one of the main degradation mechanisms for these high-performing OPV devices. While some routes for mitigating such degradation effects have been proposed, e.g., through a second layer integrated on the ETL surface, no clear strategy that complies with device scale-up and application requirements has been presented to date. In this work, it is demonstrated that the development of sputtered titanium oxide layers as ETLs in nonfullerene acceptor based OPV can lead to significantly enhanced device lifetimes. This is achieved by tuning the concentration of defect states at the oxide surface, via the reactive sputtering process, to mitigate the photocatalytic decomposition of NFA molecules at the metal oxide interlayers. Reduced defect state formation at the oxide surface is confirmed through X-ray photoelectron spectroscopy (XPS) studies, while the reduced photocatalytic decomposition of nonfullerene acceptor molecules is confirmed via optical spectroscopy investigations. The PBDB-T:ITIC organic solar cells show power conversion efficiencies of around 10% and significantly enhanced photostability. This is achieved through a reactive sputtering process that is fully scalable and industry compatible.

The Electronic Impact of Light-Induced Degradation in CsPbBr3 Perovskite Nanocrystals at Gold Interfaces.

The understanding of the interfacial properties in perovskite devices under irradiation is crucial for their engineering. In this study we show how the electronic structure of the interface between CsPbBr3 perovskite nanocrystals (PNCs) and Au is affected by irradiation of X-rays, near-infrared (NIR), and ultraviolet (UV) light. The effects of X-ray and light exposure could be differentiated by employing low-dose X-ray photoelectron spectroscopy (XPS). Apart from the common degradation product of metallic lead (Pb0), a new intermediate component (Pbint) was identified in the Pb 4f XPS spectra after exposure to high intensity X-rays or UV light. The Pbint component is determined to be monolayer metallic Pb on-top of the Au substrate from underpotential deposition (UPD) of Pb induced from the breaking of the perovskite structure allowing for migration of Pb2+.

Uncovering the Electronic State Interplay at Metal Oxide Electron Transport Layer/Nonfullerene Acceptor Interfaces in Stable Organic Photovoltaic Devices.

The implementation of sputter-deposited TiOx as an electron transport layer in nonfullerene acceptor-based organic photovoltaics has been shown to significantly increase the long-term stability of devices compared to conventional solution-processed ZnO due to a decreased photocatalytic activity of the sputtered TiOx. In this work, we utilize synchrotron-based photoemission and absorption spectroscopies to investigate the interface between the electron transport layer, TiOx prepared by magnetron sputtering, and the nonfullerene acceptor, ITIC, prepared in situ by spray deposition to study the electronic state interplay and defect states at this interface. This is used to unveil the mechanisms behind the decreased photocatalytic activity of the sputter-deposited TiOx and thus also the increased stability of the organic solar cell devices. The results have been compared to similar measurements on anatase TiOx since anatase TiOx is known to have a strong photocatalytic activity. We show that the deposition of ITIC on top of the sputter-deposited TiOx results in an oxidation of Ti3+ species in the TiOx and leads to the emergence of a new O 1s peak that can be attributed to the oxygen in ITIC. In addition, increasing the thickness of ITIC on TiOx leads to a shift in the O 1s and C 1s core levels toward higher binding energies, which is consistent with electron transfer at the interface. Resonant photoemission at the Ti L-edge shows that oxygen vacancies in sputtered TiOx lie mostly in the surface region, which contrasts the anatase TiOx where an equal distribution between surface and subsurface oxygen vacancies is observed. Furthermore, it is shown that the subsurface oxygen vacancies in sputtered TiOx are strongly reduced after ITIC deposition, which can reduce the photocatalytic activity of the oxide, while the oxygen vacancies in model anatase TiOx are not affected upon ITIC deposition. This difference can explain the inferior photocatalytic activity of the sputter-deposited TiOx and thus also the increased stability of devices with sputter-deposited TiOx used as an electron transport layer.

Wafer-sized WS2 monolayer deposition by sputtering.

We demonstrate that tungsten disulphide (WS2) with thicknesses ranging from monolayer (ML) to several monolayers can be grown on SiO2/Si, Si, and Al2O3 by pulsed direct current-sputtering. The presence of high quality monolayer and multilayered WS2 on the substrates is confirmed by Raman spectroscopy since the peak separations between the A1g-E2g and A1g-2LA vibration modes exhibit a gradual increase depending on the number of layers. X-ray diffraction confirms a textured (001) growth of WS2 films. The surface roughness measured with atomic force microscopy is between 1.5 and 3 Å for the ML films. The chemical composition WSx (x = 2.03 ± 0.05) was determined from X-ray Photoelectron Spectroscopy. Transmission electron microscopy was performed on a multilayer film to show the 2D layered structure. A unique method for growing 2D layers directly by sputtering opens up the way for designing 2D materials and batch production of high-uniformity and high-quality (stochiometric, large grain sizes, flatness) WS2 films, which will advance their practical applications in various fields.

Deciphering Electron Interplay at the Fullerene/Sputtered TiOx Interface: A Barrier-Free Electron Extraction for Organic Solar Cells.

Organic photovoltaics (OPVs) technology now offers power conversion efficiency (PCE) of over 18% and is one of the main emerging photovoltaic technologies. In such devices, titanium dioxide (TiOx) has been vastly used as an electron extraction layer, typically showing unwanted charge-extraction barriers and the need for light-soaking. In the present work, using advanced photoemission spectroscopies, we investigate the electronic interplay at the interface between low-temperature-sputtered TiOx and C70 acceptor fullerene molecules. We show that defect states in the band gap of TiOx are quenched by C70 while an interfacial state appears. This new interfacial state is expected to support the favorable energy band alignment observed, showing a perfect match of transport levels, and thus barrier-free extraction of charges, making low-temperature-sputtered TiOx a good candidate for the next generation of organic solar cells.

Gas-induced selective re-orientation of Au-Cu nanoparticles on TiO2 (110).

Au-Cu bimetallic nanoparticles (NPs) grown on TiO2(110) have been followed in situ using grazing incidence X-ray diffraction and X-ray photoemission spectroscopy from their synthesis to their exposure to a CO/O2 mixture at low pressure (P < 10-5 mbar) and at different temperatures (300 K-470 K). As-prepared samples are composed of two types of alloyed NPs: randomly oriented and epitaxial NPs. Whereas the introduction of CO has no effect on the structure of the NPs, an O2 introduction triggers a Cu surface segregation phenomenon resulting in the formation of a Cu2O shell reducible by annealing the sample over 430 K. A selective re-orientation of the nanoparticles, induced by the exposure to a CO/O2 mixture, is observed where the randomly oriented NPs take advantage of the mobility induced by the Cu segregation to re-orient their Au-rich core relatively to the TiO2(110) substrate following specifically the orientation ((111)NPs//(110)TiO2) when others epitaxial relationships were observed on the as-prepared sample.

Crystalline Molybdenum Oxide Thin-Films for Application as Interfacial Layers in Optoelectronic Devices.

The ability to control the interfacial properties in metal-oxide thin films through surface defect engineering is vital to fine-tune their optoelectronic properties and thus their integration in novel optoelectronic devices. This is exemplified in photovoltaic devices based on organic, inorganic or hybrid technologies, where precise control of the charge transport properties through the interfacial layer is highly important for improving device performance. In this work, we study the effects of in situ annealing in nearly stoichiometric MoOx (x ∼ 3.0) thin-films deposited by reactive sputtering. We report on a work function increase of almost 2 eV after inducing in situ crystallization of the films at 500 °C, resulting in the formation of a single crystalline α-MoO3 overlaid by substoichiometric and highly disordered nanoaggregates. The surface nanoaggregates possess various electronic properties, such as a work function ranging from 5.5 eV up to 6.2 eV, as determined from low-energy electron microscopy studies. The crystalline underlayer possesses a work function greater than 6.3 eV, up to 6.9 eV, characteristic of a very clean and nearly defect-free MoO3. By combining electronic spectroscopies together with structural characterizations, this work addresses a novel method for tuning, and correlating, the optoelectronic properties and microstructure of device-relevant MoOx layers.

Unusual two-stage kinetics of ethylene adsorption on Si(100) unraveled by surface optical spectroscopy and Monte Carlo simulation.

The adsorption of ethylene on a Si(100)-2×1 surface in an ultrahigh vacuum has been monitored at room temperature by use of real-time surface differential reflectance spectroscopy, which clearly demonstrated that the adsorption follows a two-stage process. About half a monolayer is obtained for 1 L, while the second stage is much slower, yielding the complete monolayer for an exposure of ∼400 L. The kinetics over the full range has been successfully reproduced by a Monte Carlo calculation. The key point of this two-stage adsorption kinetic lies in the reduced adsorption probability (by a factor of several hundreds) on the Si dimers, neighbors of dimers which have already reacted, with respect to the adsorption probability on isolated dimers. This new kind of adsorption kinetics, due to a repulsion between already adsorbed molecules and additional molecules impinging on the surface, makes it a textbook case for a "cooperative" adsorption process.

Adsorption of phenylacetylene on Si(100)-2 x 1: kinetics and structure of the adlayer.

Direct adsorption of phenylacetylene on clean silicon surface Si(100)-2 x 1 is studied in ultrahigh vacuum (UHV). The combination of scanning tunnel microscopy (STM) and surface differential reflectance spectroscopy (SDRS) with Monte Carlo calculations are put together to draw a realistic kinetic model of the evolution of the surface coverage as a function of the molecular exposure. STM images of weakly covered surfaces provide evidence of two very distinct adsorption geometries for phenylacetylene, with slightly different initial sticking probabilities. One configuration is detected with STM as a bright spot that occupies two dangling bonds of a single dimer, whereas the other configuration occupies three dangling bonds of adjacent dimers. These data are used to implement a Monte Carlo model which further serves to design an accurate kinetic model. The resulting evolution toward saturation is compared to the optical data from surface differential reflectance spectroscopy (SDRS). SDRS is an in situ technique that monitors the exact proportion of affected adsorption sites and therefore gives access to the surface coverage which is evaluated at 0.65. We investigate the effect of surface temperature on this adsorption mechanism and show that it has no major effect either on kinetics or on structure, unless it passes the threshold of dissociation measured at ca. 200 degrees C. This offers a comprehensive image of the whole adsorption process of phenylacetylene from initial up to complete saturation.