Tailored fabrication of a self-rolled-up AlGaN/GaN tubular structure with photoelectrochemical etching.

Group III-nitride semiconductors with tubular structures offer significant potential across various applications, including optics, electronics, and chemical sensors. However, achieving tailored fabrication of these structures remains a challenge. In this study, we present a novel, to the best of our knowledge, method to fabricate micro-sized tubular structures by rolling the layered membrane of group III-nitride alloys utilizing the photoelectrochemical (PEC) etching. To customize the geometry of the tubular structure, we conducted an analytic calculation to predict the strain and deformation for the layered membrane. Based on the calculations, we designed and fabricated an AlGaN/GaN/InGaN/n-GaN/ sapphire structure using metal-organic chemical vapor deposition (MOCVD). Photolithography and PEC etching were employed to selectively etch the sacrificial InGaN layer. We investigated the changes of optical properties of the rolled-up structure by utilizing micro-photoluminescence (µ-PL) and micro-Raman spectroscopy.

Electrically Confined Electroluminescence of Neutral Excitons in WSe2 Light-Emitting Transistors.

Monolayer transition metal dichalcogenides (TMDs) have drawn significant attention for their potential in optoelectronic applications due to their direct band gap and exceptional quantum yield. However, TMD-based light-emitting devices have shown low external quantum efficiencies as imbalanced free carrier injection often leads to the formation of non-radiative charged excitons, limiting practical applications. Here, electrically confined electroluminescence (EL) of neutral excitons in tungsten diselenide (WSe2) light-emitting transistors (LETs) based on the van der Waals heterostructure is demonstrated. The WSe2 channel is locally doped to simultaneously inject electrons and holes to the 1D region by a local graphene gate. At balanced concentrations of injected electrons and holes, the WSe2 LETs exhibit strong EL with a high external quantum efficiency (EQE) of ≈8.2 % at room temperature. These experimental and theoretical results consistently show that the enhanced EQE could be attributed to dominant exciton emission confined at the 1D region while expelling charged excitons from the active area by precise control of external electric fields. This work shows a promising approach to enhancing the EQE of 2D light-emitting transistors and modulating the recombination of exciton complexes for excitonic devices.

Scannable Dual-Focus Metalens with Hybrid Phase.

Metalenses with two foci in the longitudinal or transverse direction, called bifocal or dual-focus metalenses, are promising building blocks in tomography techniques, data storage, and optical tweezers. For practical applications, relative movement between the beam and specimen is required, and beam scanning is highly desirable for high-speed operation without vibration. However, dual-focus metalenses employ a hyperbolic phase that experiences off-axis aberrations, which is not suitable for beam scanning. Here, we demonstrated a scannable dual-focus metalens by employing a new phase called "hybrid phase". The hybrid phase consists of a hyperbolic phase inside and a quadratic phase outside to reduce off-axis aberrations while maintaining a high numerical aperture. We show that the two foci of the scannable dual-focus metalens move together without severe distortion for incident angles of up to 2.5°. Our design easily extends to the case of multifocusing, which is essential for various applications ranging from imaging to manipulation.

Electrically Driven Sub-Micrometer Light-Emitting Diode Arrays Using Maskless and Etching-Free Pixelation.

For decades, group-III-nitride-based light-emitting diodes (LEDs) have been regarded as a light emitting source for future displays by virtue of their novel properties such as high efficiency, brightness, and stability. Nevertheless, realization of high pixel density displays is still challenging due to limitations of pixelation methods. Here, a maskless and etching-free micro-LED (µLED) pixelation method is developed via tailored He focused ion beam (FIB) irradiation technique, and electrically driven sub-micrometer-scale µLED pixel arrays are demonstrated. It is confirmed that optical quenching and electrical isolation effects are simultaneously induced at a certain ion dose (≈1014 ions cm-2 ) without surface damage. Furthermore, highly efficient µLED pixel arrays at sub-micrometer scale (square pixel, 0.5 µm side length) are fabricated. Their pixelation and brightness are verified by various optical measurements such as cathodo-, photo-, and electroluminescence. It is expected that the FIB-induced optical quenching and electrical isolation method can pioneer a new defect engineering technology not only for µLED fabrication, but also for sub-micrometer-scale optoelectronic devices.

Ultra-Low-Power E-Nose System Based on Multi-Micro-LED-Integrated, Nanostructured Gas Sensors and Deep Learning.

As interests in air quality monitoring related to environmental pollution and industrial safety increase, demands for gas sensors are rapidly increasing. Among various gas sensor types, the semiconductor metal oxide (SMO)-type sensor has advantages of high sensitivity, low cost, mass production, and small size but suffers from poor selectivity. To solve this problem, electronic nose (e-nose) systems using a gas sensor array and pattern recognition are widely used. However, as the number of sensors in the e-nose system increases, total power consumption also increases. In this study, an ultra-low-power e-nose system was developed using ultraviolet (UV) micro-LED (µLED) gas sensors and a convolutional neural network (CNN). A monolithic photoactivated gas sensor was developed by depositing a nanocolumnar In2O3 film coated with plasmonic metal nanoparticles (NPs) directly on the µLED. The e-nose system consists of two different µLED sensors with silver and gold NP coating, and the total power consumption was measured as 0.38 mW, which is one-hundredth of the conventional heater-based e-nose system. Responses to various target gases measured by multi-µLED gas sensors were analyzed by pattern recognition and used as the training data for the CNN algorithm. As a result, a real-time, highly selective e-nose system with a gas classification accuracy of 99.32% and a gas concentration regression error (mean absolute) of 13.82% for five different gases (air, ethanol, NO2, acetone, methanol) was developed. The µLED-based e-nose system can be stably battery-driven for a long period and is expected to be widely used in environmental internet of things (IoT) applications.

Influence of wafer quality on chip size-dependent efficiency variation in blue and green micro light-emitting diodes.

We propose a key factor associated with both surface recombination velocity and radiative efficiency of an LED to estimate its chip size-dependent radiative efficiencies. The validity of the suggested factor is verified through experimental comparison between various LED wafers. Efficiencies of micro-LEDs from a blue and two green LED wafers are examined by temperature-dependent photoluminescence experiments. Surface recombination velocities are extracted from chip size dependent time-resolved PL results. Possible explanations on the reason why two green wafers show different properties are also given. With the suggested factor, we can provide more accurate prediction on the chip size-dependent efficiency of an LED wafer.

Nanoscale Focus Pinspot for High-Purity Quantum Emitters via Focused-Ion-Beam-Induced Luminescence Quenching.

Epitaxially grown quantum dots (QDs), especially embedded in photonic structures, play an essential role in various quantum photonic systems as on-demand single-photon sources. However, these QDs often suffer from adjacent unwanted emitters, which contribute to the background noise of the QD emission and fundamentally limit the single-photon purity. In this paper, a nanoscale focus pinspot (NFP) technique using focused-ion-beam-induced luminescence quenching enables us to improve single-photon purity from site-controlled QD as a proof-of-concept experiment. The optical quality of the QD emission is not degraded while the signal-to-noise ratio of the QD is improved. Moreover, the QD after the NFP technique reveals the single-photon nature at further elevated temperatures owing to the reduced background noise. As the NFP technique is nondestructive, it retains the apparent physical structures and photonic functions, thereby indicating its promising potential for applying diverse high-purity quantum emitters, particularly integrated in photonic devices and circuits.

A Flash-Induced Robust Cu Electrode on Glass Substrates and Its Application for Thin-Film µLEDs.

A robust Cu conductor on a glass substrate for thin-film µLEDs using the flash-induced chemical/physical interlocking between Cu and glass is reported. During millisecond light irradiation, CuO nanoparticles (NPs) on the display substrate are transformed into a conductive Cu film by reduction and sintering. At the same time, intensive heating at the boundary of CuO NPs and glass chemically induces the formation of an ultrathin Cu2 O interlayer within the Cu/glass interface for strong adhesion. Cu nanointerlocking occurs by transient glass softening and interface fluctuation to increase the contact area. Owing to these flash-induced interfacial interactions, the flash-activated Cu electrode exhibits an adhesion energy of 10 J m-2 , which is five times higher than that of vacuum-deposited Cu. An AlGaInP thin-film vertical µLED (VLED) forms an electrical interconnection with the flash-induced Cu electrode via an ACF bonding process, resulting in a high optical power density of 41 mW mm-2 . The Cu conductor enables reliable VLED operation regardless of harsh thermal stress and moisture infiltration under a high-temperature storage test, temperature humidity test, and thermal shock test. 50 × 50 VLED arrays transferred onto the flash-induced robust Cu electrode show high illumination yield and uniform distribution of forward voltage, peak wavelength, and device temperature.

Friction Control by Deformation Mode in Nanopatterned Amorphous Carbon.

Traditionally, the manipulation of contact mechanisms has been adopted as the primary strategy to tailor the friction properties of surfaces. On the contrary, the detaching process involving the local deformation and failure at the interface has been considered relatively less important. Here, we present a new approach toward the friction control of amorphous carbon through the plasticity and resultant transition of deformation mode on nanopatterned surfaces. Depending on the topography of the nanopatterns, the mechanical responses of the surfaces alter from elastic fracture to plastic flow, through which the friction coefficient changes by a factor of 5 without manipulation of the intrinsic structure of the material.

Three-dimensional GaN dodecagonal ring structures for highly efficient phosphor-free warm white light-emitting diodes.

Warm and natural white light (i.e., with a correlated colour temperature <5000 K) with good colour rendition (i.e., a colour rendering index >75) is in demand as an indoor lighting source of comfortable interior lighting and mood lighting. However, for warm white light, phosphor-converted white light-emitting diodes (WLEDs) require a red phosphor instead of a commercial yellow phosphor (YAG:Ce3+), and suffer from limitations such as unavoidable energy conversion losses, degraded phosphors and high manufacturing costs. Phosphor-free WLEDs based on three-dimensional (3D) indium gallium nitride (InGaN)/gallium nitride (GaN) structures are promising alternatives. Here, we propose a new concept for highly efficient phosphor-free warm WLEDs using 3D core-shell InGaN/GaN dodecagonal ring structures, fabricated by selective area growth and the KOH wet etching method. Electrically driven, phosphor-free warm WLEDs were successfully demonstrated with a low correlated colour temperature (4500 K) and high colour rendering index (Ra = 81). From our findings, we believe that WLEDs based on dodecagonal ring structures become a platform enabling a high-efficiency warm white light-emitting source without the use of phosphors.

ITO/Ag/ITO multilayer-based transparent conductive electrodes for ultraviolet light-emitting diodes.

ITO/Ag/ITO (IAI) multilayer-based transparent conductive electrodes for ultraviolet light-emitting diodes are fabricated by reactive sputtering, optimized by annealing, and characterized with respect to electrical and optical properties. Increasing the annealing temperature from 300°C to 500°C decreased the sheet resistance and increased the transmittance. This may result from an observed improvement in the crystallinity of the IAI multilayer and a reduction in the near-UV absorption coefficient of Ag. We observed the lowest sheet resistance (9.21 Ω/sq) and the highest optical transmittance (88%) at 380 nm for the IAI multilayer samples annealed in N2 gas at 500°C.