Non-volatile 2 × 2 optical switch using multimode interference in an Sb2Se3-loaded waveguide.

We propose a non-volatile 2 × 2 photonic switch based on multimode interference in an Sb2Se3-loaded waveguide. The different modal symmetries of the TE0 and TE1 modes supported in the multimode region change their propagation constants distinctly upon the Sb2Se3 phase transition. Through careful optical design and FDTD optimization of the multimode waveguide dimensions, efficient switching is achieved despite the modest index contrast of Sb2Se3 relative to Ge2Sb2Te5. The fabricated optical switch demonstrates favorable characteristics, including low insertion loss of ∼1 dB, a compact length of ∼27 µm, and small cross talk below -15 dB across a 35 nm bandwidth. Such non-volatile and broadband components will be critical for future high-density programmable photonic-integrated circuits for optical communications and signal processing.

Arbitrary Programming of Racetrack Resonators Using Low-Loss Phase-Change Material Sb2Se3.

The programmable photonic integrated circuit (PIC) is an enabling technology behind optical interconnects and quantum information processing. Conventionally, the programmability of PICs is driven by the thermo-optic effect, free carrier dispersion, or mechanical tuning. These effects afford either high speed or a large extinction ratio, but all require constant power or bias to maintain the states, which is undesirable for programmability with infrequent switching. Recent progress in programmable PICs based on nonvolatile phase-change materials (PCMs) offers an attractive solution to a truly "set-and-forget" switch that requires zero static energy. Here, we report an essential building block of large-scale programmable PICs─a racetrack resonator with independent control of coupling and phase. We changed the resonance extinction ratio (ER) without perturbing the resonance wavelength, leveraging a programmable unit based on a directional coupler and a low-loss PCM Sb2Se3. The unit is only 33-µm-long and has an operating bandwidth over 50 nm, a low insertion loss (∼0.36 dB), high ER (∼15 dB), and excellent fabrication yield of over 1000 cycles endurance across nine switches. The work is a crucial step toward future large-scale energy-efficient programmable PICs.

Origin of thermally activated Er3+ emission in GeGaSe films and waveguides.

The origin of the dead or active emission from Er in various Er-doped films has been unclear. Here we took Er-doped GeGaSe as examples and investigated the correlation between the intensity of the photoluminescence (PL) spectra, the content of the activated Er ions, and the intensity of the absorption spectra in the waveguides. We found the linear correlation between the content of Er ions, photoluminescence, and absorption intensity. This provides clear evidence that thermal annealing can promote the conversion of Er metals into Er ions, and such a conversion is essential for practical applications, in which the number of the activated Er ions rather than the nominal Er contents in the materials plays an important role in achieving emission and thus effective optical amplification and lasing.

On-chip Er-doped Ta2O5 waveguide amplifiers with a high internal net gain.

We designed and fabricated a double-layered structure Er3+:Ta2O5 waveguide and investigated its optical amplification performance in C band. The pump laser threshold for zero gain at 1533 nm was 2.5 mW, and the internal net gain was ∼4.63 dB/cm for a lunched pump power of 36.1 mW at 980 nm and signal input power of -30.0 dBm (1 µW). The relationship between the internal gain and the signal input power was also investigated, and a large internal net gain of 10.58 dB/cm was achieved at a signal input power of ∼-47.1 dBm. The results confirm the potentials of the use of Ta2O5 as a host material for optical waveguide amplification.

Compact reconfigurable on-chip polarization beam splitters enabled by phase change material.

In this paper, we present the design of a compact reconfigurable polarization beam splitter (PBS) enabled by ultralow-loss phase-changing Sb2Se3. By harnessing the phase-change-mediated mode coupling in a directional coupler (DC), guided light with different polarizations could be routed into different paths and this routing could be dynamically switched upon the phase change of Sb2Se3. With an optimized DC region, the proposed PBS demonstrates efficient polarization splitting with crosstalk less than -21.3 dB and insertion loss less than 0.16 dB at 1550 nm for both phase states of Sb2Se3, and features energy efficient property benefitting from the nonvolatile phase change of Sb2Se3, which holds great potentials for on-chip applications involving polarization control, including polarization-division multiplexing system, quantum photonics, microwave photonics, etc.

High Q-factor, ultrasensitivity slot microring resonator sensor based on chalcogenide glasses: erratum.

We correct the error in [Opt. Express30, 3866 (2022)10.1364/OE.450092], Fig. 6(c). The unit of the vertical axis in the figure should be arbitrary units, not dB. All the conclusions are unchanged after the correction.

Embedded racetrack microring resonator sensor based on GeSbSe glasses: erratum.

We correct the error in [Opt. Express31, 1103(2023)10.1364/OE.478613] Fig. 5(c). The unit of the vertical axis in the figure should be arbitrary units, not dB. All the conclusions are not changed after the correction.

Supercontinuum generation in As2S3 chalcogenide waveguide pumped by all-fiber structured dual-femtosecond solitons.

Supercontinuum sources with high compactness are essential for applications such as optical sensing, airborne detection and communication systems. In the past decades, the adoption of bulky optical parametric amplifier to pump various chalcogenide glass waveguides are widely reported for on-chip mid-infrared supercontinuum generation, but this usually leads to a large volume of the whole system, and is not practical. Therefore, integrating advanced femtosecond fiber lasers with optical waveguides using nano-fabrication technology are highly desired. However, the scarcity of compact pump sources and the dispersion-matched high-nonlinearity waveguide in short wavelength regions have hindered the advancement of integrated supercontinuum source performances in the near and mid-infrared region. In this study, we demonstrate a broadband supercontinuum source from As2S3 waveguide pumped by a compact dual-femtosecond solitons pulse source. The laser is completely fiber structured, and its wavelength can be readily tuned from 2 to 2.3 µm using Raman soliton self-frequency shift technology in a Tm3+-doped fiber amplifier. Furthermore, the As2S3 waveguide is designed with controllable dispersion and high nonlinearity for a broadband supercontinuum generation. These results will advance the development of on-chip supercontinuum sources based on chalcogenide waveguides.

High-Q chalcogenide racetrack resonators based on the multimode waveguide.

We propose and demonstrate a high quality (Q) factor racetrack resonator based on uniform multimode waveguides in high-index contrast chalcogenide glass film. Our design features two carefully designed multimode waveguide bends based on modified Euler curves, which enable a compact 180° bend and reduce the chip footprint. A multimode straight waveguide directional coupler is utilized to couple the fundamental mode without exciting higher-order modes in the racetrack. The fabricated micro-racetrack resonator shows a record-high intrinsic Q of 1.31×106 for selenide-based devices, with a relatively low waveguide propagation loss of only 0.38 dB/cm. Our proposed design has potential applications in power-efficient nonlinear photonics.

Compact nonvolatile polarization switch using an asymmetric Sb2Se3-loaded silicon waveguide.

We propose and simulate a compact (∼29.5 µm-long) nonvolatile polarization switch based on an asymmetric Sb2Se3-clad silicon photonic waveguide. The polarization state is switched between TM0 and TE0 mode by modifying the phase of nonvolatile Sb2Se3 between amorphous and crystalline. When the Sb2Se3 is amorphous, two-mode interference happens in the polarization-rotation section resulting in efficient TE0-TM0 conversion. On the other hand, when the material is in the crystalline state, there is little polarization conversion because the interference between the two hybridized modes is significantly suppressed, and both TE0 and TM0 modes go through the device without any change. The designed polarization switch has a high polarization extinction ratio of > 20 dB and an ultra-low excess loss of < 0.22 dB in the wavelength range of 1520-1585 nm for both TE0 and TM0 modes.

Embedded racetrack microring resonator sensor based on GeSbSe glasses.

In this article, a compact racetrack double microring resonator (MRR) sensor based on Ge28Sb12Se60 (GeSbSe) is investigated. The sensor device consists of a racetrack microring, an embedded small microring, and a strip waveguide. Electron beam lithography (EBL) and dry etching are used to fabricate the device. The compact racetrack double MRR device are obtained with Q-factor equal to 7.17 × 104 and FSR of 24 nm by measuring the transmission spectrum. By measuring different concentrations of glucose solutions, a sensitivity of 297 nm/RIU by linear fitting and an intrinsic limit of detection (iLOD) of 7.40 × 10-5 are obtained. It paves the way for the application of chalcogenide glasses in the field of biosensing.

Compact nonvolatile 2×2 photonic switch based on two-mode interference.

On-chip nonvolatile photonic switches enabled by phase change materials (PCMs) are promising building blocks for power-efficient programmable photonic integrated circuits. However, large absorption loss in conventional PCMs (such as Ge2Sb2Te5) interacting with weak evanescent waves in silicon waveguides usually leads to high insertion loss and a large device footprint. In this paper, we propose a 2×2 photonic switch based on two-mode interference in a multimode slot waveguide (MSW) with ultralow loss Sb2S3 integrated inside the slot region. The MSW supports two lowest order TE modes, i.e., symmetric TE00 and antisymmetric TE01 modes, and the phase of Sb2S3 could actively tune two-mode interference behavior. Owing to the enhanced electric field in the slot, the interaction strength between modal field and Sb2S3 could be boosted, and a photonic switch containing a ∼9.4 µm-long Sb2S3-MSW hybrid section could effectively alter the light transmission between bar and cross ports upon the phase change of Sb2S3 with a cross talk (CT) less than -13.6 dB and an insertion loss (IL) less than 0.26 dB in the telecommunication C-band. Especially at 1550 nm, the CT in the amorphous (crystalline) Sb2S3 is -36.1 dB (-31.1 dB) with a corresponding IL of 0.073 dB (0.055 dB). The proposed 2×2 photonic switch is compact in size and compatible with on-chip microheaters, which may find promising applications in reconfigurable photonic devices.

Narrow-bandwidth Bragg grating filter based on Ge-Sb-Se chalcogenide glasses.

Bragg grating (BG) filters play important roles in integrated photonics such as signal processing and optical sensing. In silicon-based counterpart photonic platforms, the application of narrow-bandwidth (Δλ) filters is often restrained by fabrication limitations. In this study, narrow-bandwidth BG filters based on Ge-Sb-Se chalcogenide materials are investigated. The structure of the filter is designed by optimizing the grating period, corrugation height, and grating number. The large corrugation of chalcogenide BG is more friendly and convenient for manufacturing process. The symmetric and asymmetric corrugation filters are then fabricated and characterized. Experimental results show a half-maximum bandwidth of 0.97 nm and 0.32 nm for symmetric and asymmetric filters, respectively, which demonstrates excellent narrow-bandwidth filtering performance of chalcogenide BG.

High-efficiency tunable femtosecond solitons generation from 1.9 to 2.35 µm in a thulium-doped fiber amplifier via precise seed-pulse management.

We demonstrate the tunable Raman femtosecond solitons generation with a record-breaking power of 1.2 W at 2.3 µm and an ever-reported highest Raman soliton energy conversion efficiency of 99% via precise seed-pulse management in the thulium-doped single-mode fiber amplifier. We find that the central wavelength and the chirp of the incident pulses could dramatically affect the red-shifted soliton energy, locations, conversion efficiency, and the threshold power in fundamental Raman soliton generation. For the first time, we experimentally illustrated how the seed pulse with Kelly sidebands could affect the Raman solitons generation in this amplifier, and obtained the detailed regularity between the parameters of incident pulses and the properties of the generated solitons. This work provides useful guidance for Raman soliton-based high-power mid-infrared femtosecond laser fabrication.

High Q-factor, ultrasensitivity slot microring resonator sensor based on chalcogenide glasses.

In this article, the chalcogenide slot waveguide is theoretically studied, and the highest power confinement factors of the slot region and the cladding region are obtained to be 36.3% and 56.7%, respectively. A high-sensitivity chalcogenide slot microring resonator sensor is designed and fabricated by electron-beam lithography and dry etching. The structure increases the sensitivity of the sensor compared with the conventional evanescent field waveguide sensor. The cavity has achieved a quality factor of 1 × 104 by fitting the resonant peaks with the Lorentzian profile, one of the highest quality factors reported for chalcogenide slot microring resonators. The sensor sensitivity is measured to be 471 nm/RIU, which leads to an intrinsic limit of detection of 3.3 × 10--4 RIU.

Real-time change of optical losses in chalcogenide waveguides induced by light illumination.

We prepared several GeGaSe waveguides with different chemical compositions and measured the change of optical losses induced by light illumination. Together with some experimental data in As2S3 and GeAsSe waveguides, the results showed that maximum change of the optical loss can be observed in the waveguides under bandgap light illumination. The chalcogenide waveguides with close to stoichiometric compositions have less homopolar bonds and less sub-bandgap states, and thus are preferential to have less photoinduced losses.

High-sensitivity micro-strain sensing using a broadband wavelength-tunable thulium-doped all-fiber structured mode-locked laser.

We demonstrate a thulium-doped mode-locked fiber laser with ultra-broadband wavelength tunability for micro-strain sensing based on the multimode interference (MMI) effect in single-mode-multimode-single-mode (SMS) fiber configuration. The homemade SMS device with high performance is fusion spliced in the laser cavity, and the developed dispersion precisely managed the all-fiber structured mode-locked picosecond laser with a record-breaking wavelength tuning range from 1976 to 1916 nm while exerting axial strain on this SMS device. We experimentally explored the regularity between the strain and the central-wavelength shift of the mode-locked pulse, and for the first time to the best of the authors' knowledge, achieved the precise in-line axial strain measurement from 0 to 5385 µÉ› by using the tunable ultrafast-laser-based sensor, and sensitivity is up to -11.5 pm/µÉ›. With high compactness and durability, this sensor has advantages in real-time dynamic measurement over other passive devices, thus will undoubtedly find various application scenarios.

Reconfigurable and dual-polarization Bragg grating filter with phase change materials.

Fully reconfigurable optical filters are indispensable building blocks to realize reconfigurable photonic networks/systems. This paper proposes a reconfigurable and dual-polarization optical filter based on a subwavelength grating waveguide operating in the Bragg reflection mechanism and combined with a low-loss phase change material Ge2Sb2Se4Te1. Numerical simulations indicate that, for TE(TM) polarization, the presented Bragg grating filter offers up to 20 nm (17 nm) redshift with amplitude modulation of 6 dB (0.15 dB) at 1550 nm. Using the effective medium theory, we obtained the six-level crystallization performance of the optical filter. The proposed optical filter has potential applications in wavelength-division-multiplexing systems, optical signal processing, and optical communications.

High-Q, submicron-confined chalcogenide microring resonators.

We demonstrate high quality (Q) factor microring resonators in high index-contrast GeSbSe chalcogenide glass waveguides using electron-beam lithography followed by plasma dry etching. A microring resonator with a radius of 90 µm shows an intrinsic Q factor of 4.1 × 105 in the telecom band. Thanks to the submicron waveguide dimension, the effective nonlinear coefficient was determined to be up to ∼110 W-1m-1 at 1550 nm, yielding a larger figure-of-merit compared with previously reported submicron chalcogenide waveguides. Such a high Q factor, combined with the large nonlinear coefficient and high confinement, shows the great potential of the GeSbSe microring resonator as a competitive platform in integrated nonlinear photonics.

Helicity-dependent continuous varifocal metalens based on bilayer dielectric metasurfaces.

Metasurfaces offer a unique platform to realize flat lenses, reducing the size and complexity of imaging systems and thus enabling new imaging modalities. In this paper, we designed a bilayer helicity-dependent continuous varifocal dielectric metalens in the near-infrared range. The first layer consists of silicon nanopillars and functions as a half-wave plate, providing the helicity-dependent metasurface by combining propagation phase and geometric phase. The second layer consists of phase-change material Sb2S3 nanopillars and provides tunable propagation phases. Upon excitation with the circularly polarized waves possessing different helicities, the metalens can generate helicity-dependent longitudinal focal spots. Under the excitation of linear polarized light, the helicity-dependent dual foci are generated. The focal lengths in this metalens can be continuously tuned by the crystallization fraction of Sb2S3. The zoom range is achieved from 32.5 µm to 37.2 µm for right circularly polarized waves and from 50.5 µm to 60.9 µm for left circularly polarized waves. The simulated focusing efficiencies are above 75% and 87% for the circularly and linearly polarized waves, respectively. The proposed metalens has potential applications in miniaturized devices, including compact optical communication systems, imaging, and medical devices.