Three-dimensional sensing of surfaces by projection of invisible electroluminescence from organic light-emitting diodes.

Organic light-emitting diodes (OLEDs) that efficiently emit near-infrared (NIR) light and consume little power will create valuable applications for OLEDs beyond just displays. Here, we report such a NIR-OLED with high operational stability that can be used as a light source for three-dimensional sensing of object's surfaces. Using a narrow-energy-gap material as a host for producing NIR hyperfluorescence system, we fabricated a NIR-OLED exhibiting intense emission at 930 nm with a high external electroluminescence quantum efficiency of more than 1% at a current density of 100 milliamperes per square meter without any degradation even after more than 300 hours of operation. The NIR-OLEDs were integrated with dense complementary metal-oxide semiconductor circuits to make a micro-NIR-OLED projector (0.21 inch, 230,400 pixels). By actively driving the projector on a pixel by pixel and projecting their emission onto objects, we successfully scanned and sensed the surfaces in three dimensions with invisible NIR.

Highly Efficient Near-Infrared Electrofluorescence from a Thermally Activated Delayed Fluorescence Molecule.

Near-IR organic light-emitting diodes (NIR-OLEDs) are potential light-sources for various sensing applications as OLEDs have unique features such as ultra-flexibility and low-cost fabrication. However, the low external electroluminescence (EL) quantum efficiency (EQE) of NIR-OLEDs is a critical obstacle for potential applications. Here, we demonstrate a highly efficient NIR emitter with thermally activated delayed fluorescence (TADF) and its application to NIR-OLEDs. The NIR-TADF emitter, TPA-PZTCN, has a high photoluminescence quantum yield of over 40 % with a peak wavelength at 729 nm even in a highly doped co-deposited film. The EL peak wavelength of the NIR-OLED is 734 nm with an EQE of 13.4 %, unprecedented among rare-metal-free NIR-OLEDs in this spectral range. TPA-PZTCN can sensitize a deeper NIR fluorophore to achieve a peak wavelength of approximately 900 nm, resulting in an EQE of over 1 % in a TADF-sensitized NIR-OLED with high operational device durability (LT95 >600 h.).