Stretchable OLEDs based on a hidden active area for high fill factor and resolution compensation.

Stretchable organic light-emitting diodes (OLEDs) have emerged as promising optoelectronic devices with exceptional degree of freedom in form factors. However, stretching OLEDs often results in a reduction in the geometrical fill factor (FF), that is the ratio of an active area to the total area, thereby limiting their potential for a broad range of applications. To overcome these challenges, we propose a three-dimensional (3D) architecture adopting a hidden active area that serves a dual role as both an emitting area and an interconnector. For this purpose, an ultrathin OLED is first attached to a 3D rigid island array structure through quadaxial stretching for precise, deformation-free alignment. A portion of the ultrathin OLED is concealed by letting it 'fold in' between the adjacent islands in the initial, non-stretched condition and gradually surfaces to the top upon stretching. This design enables the proposed stretchable OLEDs to exhibit a relatively high FF not only in the initial state but also after substantial deformation corresponding to a 30% biaxial system strain. Moreover, passive-matrix OLED displays that utilize this architecture are shown to be configurable for compensation of post-stretch resolution loss, demonstrating the efficacy of the proposed approach in realizing the full potential of stretchable OLEDs.

Wide process temperature of atomic layer deposition for In2O3thin-film transistors using novel indium precursor (N,N'-di-tert butylacetimidamido)dimethyllindium.

This study introduces a novel heteroleptic indium complex, which incorporates an amidinate ligand, serving as a high-temperature atomic layer deposition (ALD) precursor. The most stable structure was determined using density functional theory and synthesized, demonstrating thermal stability up to 375 °C. We fabricated indium oxide thin-film transistors (In2O3TFTs) prepared with DBADMI precursor using ALD in wide range of window processing temperature of 200 °C, 300 °C, and 350 °C with an ozone (O3) as the source. The growth per cycle of ALD ranged from 0.06 to 0.1 nm cycle-1at different deposition temperatures. X-ray diffraction and transmission electron microscopy were employed to analyze the crystalline structure as it relates to the deposition temperature. At a relatively low deposition temperature of 200 °C, an amorphous morphology was observed, while at 300 °C and 350 °C, crystalline structures were evident. Additionally, x-ray photoelectron spectroscopy analysis was conducted to identify the In-O and OH-related products in the film. The OH-related product was found to be as low as 1% with an increase the deposition temperature. Furthermore, we evaluated In2O3TFTs and observed an increase in field-effect mobility, with minimal change in the threshold voltage (Vth), at 200 °C, 300 °C, and 350 °C. Consequently, the DBADMI precursor, given its stability at highdeposition temperatures, is ideal for producing high-quality films and stable crystalline phases, with wide processing temperature range makeing it suitable for various applications.

Improvement in current drivability and stability in nanoscale vertical channel thin-film transistors via band-gap engineering in In-Ga-Zn-O bilayer channel configuration.

Vertical channel thin film transistors (VTFTs) have been expected to be exploited as one of the promising three-dimensional devices demanding a higher integration density owing to their structural advantages such as small device footprints. However, the VTFTs have suffered from the back-channel effects induced by the pattering process of vertical sidewalls, which critically deteriorate the device reliability. Therefore, to reduce the detrimental back-channel effects has been one of the most urgent issues for enhancing the device performance of VTFTs. Here we show a novel strategy to introduce an In-Ga-Zn-O (IGZO) bilayer channel configuration, which was prepared by atomic-layer deposition (ALD), in terms of structural and electrical passivation against the back-channel effects. Two-dimensional electron gas was effectively employed for improving the operational reliability of the VTFTs by inducing strong confinement of conduction electrons at heterojunction interfaces. The IGZO bilayer channel structure was composed of 3 nm-thick In-rich prompt (In/Ga = 4.1) and 12 nm-thick prime (In/Ga = 0.7) layers. The VTFTs using bilayer IGZO channel showed high on/off ratio (4.8 × 109), low SS value (180 mV dec-1), and high current drivability (13.6µAµm-1). Interestingly, the strategic employment of bilayer channel configurations has secured excellent device operational stability representing the immunity against the bias-dependent hysteretic drain current and the threshold voltage instability of the fabricated VTFTs. Moreover, the threshold voltage shifts of the VTFTs could be suppressed from +5.3 to +2.6 V under a gate bias stress of +3 MV cm-1for 104s at 60 °C, when the single layer channel was replaced with the bilayer channel. As a result, ALD IGZO bilayer configuration could be suggested as a useful strategy to improve the device characteristics and operational reliability of VTFTs.

High density integration of stretchable inorganic thin film transistors with excellent performance and reliability.

Transistors with inorganic semiconductors have superior performance and reliability compared to organic transistors. However, they are unfavorable for building stretchable electronic products due to their brittle nature. Because of this drawback, they have mostly been placed on non-stretchable parts to avoid mechanical strain, burdening the deformable interconnects, which link these rigid parts, with the strain of the entire system. Integration density must therefore be sacrificed when stretchability is the first priority because the portion of stretchable wirings should be raised. In this study, we show high density integration of oxide thin film transistors having excellent performance and reliability by directly embedding the devices into stretchable serpentine strings to defeat such trade-off. The embedded transistors do not hide from deformation and endure strain up to 100% by themselves; thus, integration density can be enhanced without sacrificing the stretchability. We expect that our approach can create more compact stretchable electronics with high-end functionality than before.

Roles of Oxygen Interstitial Defects in Atomic-Layer Deposited InGaZnO Thin Films with Controlling the Cationic Compositions and Gate-Stack Processes for the Devices with Subµm Channel Lengths.

Roles of oxygen interstitial defects located in the In-Ga-Zn-O (IGZO) thin films prepared by atomic layer deposition were investigated with controlling the cationic compositions and gate-stack process conditions. It was found from the spectroscopic ellipsometry analysis that the excess oxygens increased with increasing the In contents within the IGZO channels. While the device using the IGZO channel with an In/Ga ratio of 0.2 did not show marked differences with the variations in the oxidant types during the gate-stack formation, the device characteristics were severely deteriorated with increasing the In/Ga ratio to 1.4, when the Al2O3 gate insulator (GI) was prepared with the H2O oxidants (H2O-Al2O3) due to a higher amount of excess oxygen in the channel. Additionally, during the deposition process of the Al-doped ZnO (AZO) gate electrode (GE) replacing from the indium-tin oxide (ITO) GE, the thermal annealing effect at 180 °C facilitated the passivation of oxygen vacancy and the strengthening of metal-oxygen bonding, which could stabilize the TFT operations. From these results, the gate-stack structure employing O3-processed Al2O3 GI (O3-Al2O3) and AZO GE (OA) was suggested to be most suitable for the device using IGZO channel with a higher In content. On the other hand, the device employing H2O-Al2O3 GI and AZO GE exhibited larger negative shifts of threshold voltage (VTH) under positive-bias-temperature stress (PBTS) condition than the device employing O3- Al2O3 GI and ITO GE due to larger hydrogen contents within the gate stacks. Anomalous negative shifts of VTH were accelerated with increasing the In contents of the IGZO channel. When the channel length of the fabricated device were scaled down to submicrometer regime, the OA gate stacks successfully alleviated the short-channel effects.

Necrotizing Soft-Tissue Infections: A Retrospective Review of Predictive Factors for Limb Loss.

Background: Emergent diagnosis and treatment are important for the survival of patients with necrotizing soft-tissue infections (NSTIs). Death is the most catastrophic outcome, but limb loss is also one of the most important complications that can have a significant impact on the rest of the patient's life. The purpose of this study was to identify predictive factors for limb loss caused by NSTIs. Methods: The data of patients at our center who were diagnosed with NSTIs from May 2003 to January 2019 were analyzed retrospectively. The inclusion criteria were patients with a definite diagnosis of NSTI involving the upper or lower limb. A total of 49 patient records were analyzed in terms of demography, laboratory data, microbiological causes, treatment, and final outcome. Laboratory Risk Indicator for Necrotizing Fasciitis (LRINEC) scores at initial admission were also collected as laboratory data. Final outcomes were classified into survival with limb salvage and survival with limb loss. Results: The limb loss rate was 20.4% (10/49) in our study. On comparison between the limb salvage group and the limb loss group, independent risk factors of limb loss were as follows: presence of hypotension at admission (odds ratio [OR], 8.2; 95% confidence interval [CI], 1.7-38.3; p = 0.008); LRINEC score ≥ 9 (OR, 5.8; 95% CI, 1.3-25.6; p = 0.012), and glucose level > 300 mg/dL (OR, 4.5; 95% CI, 0.9-21.9; p = 0.041). Various microbiological organisms were isolated; the most prevalent specimen was streptococci (32.6%), followed by staphylococci (26.5%). Poor outcomes including limb loss and mortality had no correlation with microbiological organisms. Conclusions: For patients with NSTIs, the presence of hypotension at admission, a high glucose level (> 300 mg/dL), and a high LRINEC score (> 9) were independent risk factors for limb loss.

Organic/Inorganic Hybrid Thin-Film Encapsulation Using Inkjet Printing and PEALD for Industrial Large-Area Process Suitability and Flexible OLED Application.

We present herein the first report of organic/inorganic hybrid thin-film encapsulation (TFE) developed as an encapsulation process for mass production in the display industry. The proposed method was applied to fabricate a top-emitting organic light-emitting device (TEOLED). The organic/inorganic hybrid TFE has a 1.5 dyad structure and was fabricated using plasma-enhanced atomic layer deposition (PEALD) and inkjet printing (IJP) processes that can be applied to mass production operations in the industry. Currently, industries use inorganic thin films such as SiNx and SiOxNy fabricated through plasma-enhanced chemical vapor deposition (PECVD), which results in film thickness >1 µm; however, in the present work, an Al2O3 inorganic thin film with a thickness of 30 nm was successfully fabricated using ALD. Furthermore, to decouple the crack propagation between the adjacent Al2O3 thin films, an acrylate-based polymer layer was printed between these layers using IJP to finally obtain the 1.5 dyad hybrid TFE. The proposed method can be applied to optoelectronic devices with various form factors such as rollables and stretchable displays. The hybrid TFE developed in this study has a transmittance of 95% or more in the entire visible light region and a very low surface roughness of less than 1 nm. In addition, the measurement of water vapor transmission rate (WVTR) using commercial MOCON equipment yielded a value of 5 × 10-5 gm-2 day-1 (37.8 °C and 100% RH) or less, approaching the limit of the measuring equipment. The TFE was applied to TEOLEDs and the improvement in optical properties of the device was demonstrated. The OLED panel was manufactured and operated stably, showing excellent consistency even in the actual display manufacturing process. The panel operated normally even after 363 days in air. The proposed organic/inorganic hybrid encapsulant manufacturing process is applicable to the display industry and this study provides basic guidelines that can serve as a foothold for the development of various technologies in academia and industry alike.

Wide angle holographic video projection display.

Holographic projection displays provide high diffraction efficiency. However, they have a limited projection angle. This work proposes a holographic projection display with a wide angle, which gives an image of size 306mm×161mm at 700 mm and reduced speckle noise. The solution uses single Fourier lens imaging with a frequency filter and hologram generation utilizing complex coding and nonparaxial diffraction. The experiment was performed with a 4K phase-only spatial light modulator (SLM) to prove the high efficiency of the developed numerical tools. Optical reconstruction shows high resolution and high image quality achieved from a single frame. Hence, displaying video at a full frame rate of the SLM is possible.

Correction to: Relation of Superficial and Deep Layers of Delaminated Rotator Cuff Tear to Supraspinatus and Infraspinatus Insertions.

[This corrects the article DOI: 10.1007/s43465-019-00020-6.].

Thin-film transistor-driven vertically stacked full-color organic light-emitting diodes for high-resolution active-matrix displays.

Thin-film transistor (TFT)-driven full-color organic light-emitting diodes (OLEDs) with vertically stacked structures are developed herein using photolithography processes, which allow for high-resolution displays of over 2,000 pixels per inch. Vertical stacking of OLEDs by the photolithography process is technically challenging, as OLEDs are vulnerable to moisture, oxygen, solutions for photolithography processes, and temperatures over 100 °C. In this study, we develop a low-temperature processed Al2O3/SiNx bilayered protection layer, which stably protects the OLEDs from photolithography process solutions, as well as from moisture and oxygen. As a result, transparent intermediate electrodes are patterned on top of the OLED elements without degrading the OLED, thereby enabling to fabricate the vertically stacked OLED. The aperture ratio of the full-color-driven OLED pixel is approximately twice as large as conventional sub-pixel structures, due to geometric advantage, despite the TFT integration. To the best of our knowledge, we first demonstrate the TFT-driven vertically stacked full-color OLED.

Relation of Superficial and Deep Layers of Delaminated Rotator Cuff Tear to Supraspinatus and Infraspinatus Insertions.

BACKGROUND: It remains unclear whether the deep layer of the rotator cuff is an articular layer of the supraspinatus (SS) or infraspinatus (IS), rotator cable, or superior capsule. Therefore, this study aimed to analyse the relationship between occupation ratios and delamination patterns of rotator cuff tears (RCTs). We hypothesised that the deep layers are related to the occupation ratios of the deep SS and IS sections. MATERIALS AND METHODS: A total of 265 patients with RCTs were retrospectively enrolled between 2013 and 2017 and divided into four groups: A, non-delaminated tear; B, delaminated tear with the deep layer equally retracted to the superficial layer; C, delaminated tear with the deep layer more retracted; D, delaminated tear with the superficial layer more retracted. Muscle volume was evaluated by measurement of each occupation ratio of the SS and IS, and the IS muscle was additionally divided into two areas, deep and superficial. RESULTS: The SS occupation ratio was significantly lower in group C than in the other groups (p = 0.009). Conversely, comparison of the IS occupation ratios revealed no significant intergroup differences. The occupation ratio of the superficial IS was significantly lower in group D than in the other groups (p = 0.003). In group C, the occupation ratios of the deep IS section were significantly decreased according to RCT size (p = 0.034). CONCLUSION: Our findings demonstrate that the superficial layers are related to the IS superficial section and the deep layers to the SS and IS deep sections. LEVEL OF STUDY: IV.

Irreducible posterior fracture and dislocation of shoulder with massive rotator cuff tear due to incarceration of biceps tendon: A case report.

Acute traumatic posterior glenohumeral dislocation in association with a massive rotator cuff tear is rare. Moreover, only few cases with interposition of the long biceps head of the tendon has been described to prevent reduction in posterior dislocation of the shoulder. In addition, combined scapula fracture with posterior shoulder dislocation also extremely rare. We present a case of Irreducible posterior fracture and dislocation of shoulder with massive rotator cuff tear due to incarceration of biceps tendon. For the treatment arthroscopic in situ superior capsule reconstruction was performed using the long head of the biceps tendon with rotator cuff repair.

Clinical outcomes of dual 3.5-mm locking compression plate fixation for humeral shaft fractures: Comparison with single 4.5-mm locking compression plate fixation.

BACKGROUND: Recently, several in vitro biomechanical studies that used dual small locking plate fixation for humeral shaft fractures have investigated. However, in vivo studies about dual plate fixation for humeral shaft fractures are limited. The purpose of our study was to report the outcomes of dual small plating for humeral shaft fractures in comparison with those of single large fragment plating. METHODS: Sixty consecutive patients who underwent an open reduction internal fixation for humeral shaft fractures at our institution from September 2014 to December 2017 were included. Single 4.5-mm locking compression plate (LCP) fixation was used in the first 40 cases, and dual 3.5-mm LCP fixation was used in the final 20 consecutive cases. Data were collected to define patient characteristics, injury mechanism, clinical outcomes, time to surgery, operative time, estimated blood loss, and complications. Using simple radiography during the follow-up period (6, 12, 24, and 52 weeks after surgery), the shoulder and elbow joint ranges of motion (ROM) were also evaluated. RESULTS: Demographic data, time to surgery, surgical time, and estimated blood loss had no significant differences between the two groups. No significant differences were observed in nonunion rate and union rate 3 months after surgery. However, two patients (5%) in the single 4.5-mm LCP fixation group showed metal failure and breakage. No significant differences were found in postoperative shoulder and elbow ROM. Three patients (7.5%) in the single plating group and one patient (5%) in the dual plating group developed radial nerve palsy after surgery. No vascular injury and deep infection were observed in either group. CONCLUSION: For diaphyseal humeral fractures, dual 3.5-mm LCP fixation to the humerus is a possible treatment choice. This method showed satisfactory union rate, ROM, and complication rate, without increasing surgical time, in comparison with the conventional single 4.5-mm LCP fixation. Level of evidence: III.

Greater tuberosity angle and critical shoulder angle according to the delamination patterns of rotator cuff tear.

The purpose was to evaluate the relationship between GTA, CSA, and the delamination patterns of RCTs. This study included 315 patients with RCTs from 2014 to 2018, retrospectively. The subjects were divided into 5 groups: Group A, control group; Group B, non-delaminated tear; Group C, delaminated tear with equally retraction of articular and bursal layer; Group D, articular layer more retracted delaminated tear, and Group E, bursal layer more retracted delaminated tear. In conclusion, large GTA and CSA were associated with rotator cuff tears. However, there was no difference of GTA and CSA according to the delamination patterns.

Correction: Rewritable full-color computer-generated holograms based on color-selective diffractive optical components including phase-change materials.

Correction for 'Rewritable full-color computer-generated holograms based on color-selective diffractive optical components including phase-change materials' by Chi-Young Hwang et al., Nanoscale, 2018, DOI: 10.1039/c8nr04471f.

Rewritable full-color computer-generated holograms based on color-selective diffractive optical components including phase-change materials.

We propose rewritable full-color computer-generated holograms (CGHs) based on color-selective diffraction using the diffractive optical component with the resonant characteristic. The structure includes an ultrathin layer of phase-change material Ge2Sb2Te5 (GST) on which a spatial binary pattern of amorphous and crystalline states can be recorded. The CGH patterns can be easily erased and rewritten by the pulsed ultraviolet laser writing technique owing to the thermally reconfigurable characteristic of GST. We experimentally demonstrate that the fabricated CGH, having a fine pixel pitch of 2 µm and a size of 32.8 × 32.8 mm2, reconstructs the three-dimensional holographic images. In addition, the feasibility of the rewritable property is verified by erasing and rewriting part of the CGH.

Defects and Charge-Trapping Mechanisms of Double-Active-Layer In-Zn-O and Al-Sn-Zn-In-O Thin-Film Transistors.

Active matrix organic light-emitting diodes (AMOLEDs) are considered to be a core component of next-generation display technology, which can be used for wearable and flexible devices. Reliable thin-film transistors (TFTs) with high mobility are required to drive AMOLEDs. Recently, amorphous oxide TFTs, due to their high mobility, have been considered as excellent substitutes for driving AMOLEDs. However, the device instabilities of high-mobility oxide TFTs have remained a key issue to be used in production. In this paper, we present the charge-trapping and device instability mechanisms of high-mobility oxide TFTs with double active layers, using In-Zn-O (IZO) and Al-doped Sn-Zn-In-O (ATZIO) with various interfacial IZO thicknesses (0-6 nm). To this end, we employed microsecond fast current-voltage (I-V), single-pulsed I-V, transient current, and discharge current analysis. These alternating-current device characterization methodologies enable the extraction of various trap parameters and defect densities as well as the understanding of dynamic charge transport in double-active-layer TFTs. The results show that the number of defect sites decreases with an increase in the interfacial IZO thickness. From these results, we conclude that the interfacial IZO layer plays a crucial role in minimizing charge trapping in ATZIO TFTs.

Flexion bonding transfer of multilayered graphene as a top electrode in transparent organic light-emitting diodes.

Graphene has attracted considerable attention as a next-generation transparent conducting electrode, because of its high electrical conductivity and optical transparency. Various optoelectronic devices comprising graphene as a bottom electrode, such as organic light-emitting diodes (OLEDs), organic photovoltaics, quantum-dot LEDs, and light-emitting electrochemical cells, have recently been reported. However, performance of optoelectronic devices using graphene as top electrodes is limited, because the lamination process through which graphene is positioned as the top layer of these conventional OLEDs is a lack of control in the surface roughness, the gapless contact, and the flexion bonding between graphene and organic layer of the device. Here, a multilayered graphene (MLG) as a top electrode is successfully implanted, via dry bonding, onto the top organic layer of transparent OLED (TOLED) with flexion patterns. The performance of the TOLED with MLG electrode is comparable to that of a conventional TOLED with a semi-transparent thin-Ag top electrode, because the MLG electrode makes a contact with the TOLED with no residue. In addition, we successfully fabricate a large-size transparent segment panel using the developed MLG electrode. Therefore, we believe that the flexion bonding technology presented in this work is applicable to various optoelectronic devices.

Nonvolatile memory thin-film transistors using biodegradable chicken albumen gate insulator and oxide semiconductor channel on eco-friendly paper substrate.

Nonvolatile memory thin-film transistors (TFTs) fabricated on paper substrates were proposed as one of the eco-friendly electronic devices. The gate stack was composed of chicken albumen gate insulator and In-Ga-Zn-O semiconducting channel layers. All the fabrication processes were performed below 120 °C. To improve the process compatibility of the synthethic paper substrate, an Al2O3 thin film was introduced as adhesion and barrier layers by atomic layer deposition. The dielectric properties of biomaterial albumen gate insulator were also enhanced by the preparation of Al2O3 capping layer. The nonvolatile bistabilities were realized by the switching phenomena of residual polarization within the albumen thin film. The fabricated device exhibited a counterclockwise hysteresis with a memory window of 11.8 V, high on/off ratio of approximately 1.1 × 10(6), and high saturation mobility (µsat) of 11.5 cm(2)/(V s). Furthermore, these device characteristics were not markedly degraded even after the delamination and under the bending situration. When the curvature radius was set as 5.3 cm, the ION/IOFF ratio and µsat were obtained to be 5.9 × 10(6) and 7.9 cm(2)/(V s), respectively.

High performance of silicon nanowire-based biosensors using a high-k stacked sensing thin film.

High performance silicon nanowire (SiNW) sensors with SiO2/HfO2/Al2O3 (OHA) engineered sensing thin films were fabricated. A lower interface state density, a larger capacitance and a stronger chemical immunity, which are essential for enhancing the performance of devices, were accomplished by stacking thin SiO2, HfO2, and Al2O3 layers, respectively, in sequence on the SiNW channel. Compared with the conventional single SiO2 thin film, the staked OHA thin films demonstrated improved sensing performances; a higher sensitivity, a lower hysteresis voltage, and a smaller drift rate, as well as a higher output current. Therefore, the SiNW sensors with OHA stacked sensing thin films are very promising to biological and chemical sensor applications.