Highly efficient MoS2/WS2 heterojunctions for the CO2 reduction reaction: strong electronic transmission.

Transition metal dichalcogenides (TMDs) possess several advantages, such as high conductivity, stable structure, and low cost, making them promising catalysts for carbon dioxide electroreduction. However, the high overpotential and the desorption characteristics of the reaction products during the reduction of carbon dioxide present significant challenges in the field of catalysis. In this study, we have further enhanced the catalytic activity of the original WS2 structure by constructing a heterojunction. We systematically investigate the catalytic activity of MoS2/WS2 heterojunctions supported by transition metals using density functional theory (DFT) calculations. The findings of this study are as follows: (1) the unique multiphase structure enhances the catalytic performance for CO2 reduction. (2) After constructing the MoS2/WS2 heterojunction, the electronic properties and conductivity of the heterojunction can be significantly enhanced, thereby facilitating the catalytic reduction of carbon dioxide. The Cu loading on the Cu@MoS2/WS2 heterojunction significantly reduces the overpotential, with a very low limit potential of -0.58 V. The adsorption behavior of CO on the Cu@MoS2/WS2 heterojunction was evaluated using adsorption energy, desorption energy, and density of states (DOS). The appropriate interaction between CO and Cu@ MoS2/WS2 promotes the reduction of CO2 to CO and facilitates smooth desorption of CO, demonstrating a strong catalytic effect on the CO2 reduction reaction (CO2RR). Therefore, it can be seen that Cu@MoS2/WS2 may be considered as potential single-atom catalysts (SACs) for CO2 reduction electrocatalysts. Finally, it is hoped that our results will provide theoretical support for the development of efficient CO2 reduction catalysts.

Enhanced Power Factor and Ultralow Lattice Thermal Conductivity Induced High Thermoelectric Performance of BiCuTeO/BiCuSeO Superlattice.

Based on the first-principles calculations, the electronic structure and transport properties of BiMChO (M=Cu and Ag, Ch=S, Se, and Te) superlattices have been studied. They are all semiconductors with indirect band gaps. The increased band gap and decreased band dispersion near the valence band maximum (VBM) lead to the lowest electrical conductivity and the lowest power factor for p-type BiAgSeO/BiCuSeO. The band gap value of BiCuTeO/BiCuSeO decreases because of the up-shifted Fermi level of BiCuTeO compared with BiCuSeO, which would lead to relatively high electrical conductivity. The converged bands near VBM can produce a large effective mass of density of states (DOS) without explicitly reducing the mobility µ for p-type BiCuTeO/BiCuSeO, which means a relatively large Seebeck coefficient. Therefore, the power factor increases by 15% compared with BiCuSeO. The up-shifted Fermi level leading to the band structure near VBM is dominated by BiCuTeO for the BiCuTeO/BiCuSeO superlattice. The similar crystal structures bring out the converged bands near VBM along the high symmetry points Γ-X and Z-R. Further studies show that BiCuTeO/BiCuSeO possesses the lowest lattice thermal conductivity among all the superlattices. These result in the ZT value of p-type BiCuTeO/BiCuSeO increasing by over 2 times compared with BiCuSeO at 700 K.

Controlling the magnetic anisotropy of RumIrn (m + n = 3) clusters using the MgO(001) substrate.

Large perpendicular magnetic anisotropy energy (MAE) and flexible regulation of the magnitude and direction of MAE have great potential for application in information storage devices. Here, utilizing first-principles calculations, we investigated the magnetic properties of free and MgO(001) supported RumIrn clusters (RumIrn@MgO(m + n = 3)). The results indicate that the MAE of mixed clusters increases with the number of Ir atoms due to Ir having a strong coupling between the non-degenerate dxy and dx2-y2 states. The MAE of free Ir3 is -8.18 meV with the easy magnetization direction parallel to the x-axis, while the MAE of supported Ir3 on the MgO substrate increases by a factor of 2.6, and the easy magnetization axis of the structure is shifted to a direction perpendicular to the substrate surface. This change in MAE is due to the significant enhancement in the coupling between the non-degenerate dyz and dx2-y2 states near the Fermi level of Ir3 atoms. Moreover, Ir3@MgO possesses high thermodynamic stability. These results give a new method for manipulating MAE and the direction of easy magnetization, which has great potential for application in magnetic nanodevices.

Graphdiyne-supported single-cluster electrocatalysts for highly efficient carbon dioxide reduction reaction.

The electrochemical CO2 reduction reaction (CO2RR) has become a promising technology to resolve globally accelerating CO2 emissions and produce chemical fuels. In this work, the electrocatalytic performance of transition metal (TM = Cu, Cr, Mn, Co, Ni, Mo, Pt, Rh, Ru and V) triatomic clusters embedded in a graphdiyne (GDY) monolayer (TM3@GDY) for CO2RR is investigated by density functional theory (DFT) calculations. The results indicate that Cr3@GDY possesses the best catalytic performance with a remarkably low rate-limiting step of 0.39 eV toward the CO2 product, and it can also effectively suppress the hydrogen evolution reaction (HER) during the entire CO2RR process. Studies on the rate-limiting steps (CHO* + H+ + e- → CHOH) of Crn@GDY (n = 1-4) structures demonstrate that the high catalytic performance is attributed to the strong synergistic reaction of three Cr atoms interacting with the C atom for the Cr3@GDY structure. The strong synergistic reaction gives rise to the weakest interaction between O-Cr atoms, which leads to the strongest interaction between O-H atoms and makes the hydrogenation process easier for the Cr3@GDY structure. Furthermore, ab initio molecular dynamics simulations (AIMD) at 500 K reveal the high thermodynamic stability of the Cr3@GDY structure. These studies may provide a new approach for designing highly efficient electrocatalysts for the CO2RR under ambient conditions.

Termination effects of single-atom decorated v-Mo2CTx MXene for the electrochemical nitrogen reduction reaction.

The lack of the green, economical and high-efficient catalysts restrict the development of electrochemical nitrogen reduction reaction (NRR). By means of density functional theory (DFT) calculations, we have systematically investigated the NRR catalytic performance of single atoms decorated v-Mo2CT2 (T = O, F, OH, Cl, and Li) MXene (TM@v-Mo2CT2). Our calculation results reveal the introduction of single atom can significantly improve the NRR activity and selectivity on v-Mo2CO2, and Ir@v-Mo2CO2 system possesses the lowest limiting potential of only -0.33 V among all studied systems. The termination effects of TM@v-Mo2CT2 are further discussed and a descriptor of the adsorption energy of *NNH species (ΔE(*NNH)) is proposed to establish the relationship with NRR limiting potential (UL(NRR)), in which a moderate (ΔE(*NNH)) is required for high NRR activity. Moreover, a good linear relationship between the ΔE(*NNH) and the excess electrons on Ir atom shows that different ΔE(*NNH) originates from the difference of valence state of Ir atom, which is due to the change of coordination environment. Importantly, the synergistic effects of Ir atom and the surface O-terminations during the first hydrogenation step lead to a promoted NRR performance. Our study might provide new possibilities for rational design of cost-effective MXene-based NRR electrocatalysts.

A DFT screening of single transition atoms supported on MoS2 as highly efficient electrocatalysts for the nitrogen reduction reaction.

The development of low-cost and highly efficient materials for the electrocatalytic nitrogen reduction reaction (NRR) under ambient conditions is an attractive and challenging topic in chemistry. In this study, the electrocatalytic performance of a series of transition metal (TM) atoms supported on MoS2 nanosheets (TM@MoS2) was systematically investigated using density functional theory (DFT) calculations. It was found that Re supported on MoS2 (Re@MoS2) has the best NRR catalytic activity with a limiting potential of -0.43 V, along with high selectivity over the competing hydrogen evolution reaction (HER). Moreover, the ab initio molecular dynamics (AIMD) simulations at 500 K and density of states (DOS) calculations indicated the high thermodynamic stability and excellent electrical conductivity of Re@MoS2. A linear trend between several parameters of single atom catalysts (SACs) and the adsorption Gibbs free energy change of the NH species (ΔG*NH) was observed, indicating the later as a simple descriptor for the facilitated screening of novel SACs. These results pave the way for exploring novel, highly efficient electrocatalysts for the electrochemical NRR under ambient conditions.

A molecular device providing a remarkable spin filtering effect due to the central molecular stretch caused by lateral zigzag graphene nanoribbon electrodes.

Through the density functional theory, we studied molecular devices composed of single tetrathiafulvalene (TTF) molecules connected with zigzag graphene nanoribbon electrodes by four different junctions. Interestingly, some devices have exhibited half-metallic behavior and can bring out a perfect spin filtering effect and remarkable negative differential resistance behavior. The current-voltage characteristics show that these four devices possess different spin current values. We found that all the TTF molecules were stretched due to interactions with the electrodes in the four devices. This leads to the Fermi levels of the three devices being down-shifted to the valence band; therefore, these devices exhibit half-metallic properties. The underlying mechanisms of the different spin current values are attributed to the different electron transmission pathways (via chemical bonds or through hopping between atoms). These results suggest that the device properties and conductance are controlled by different junctions. Our work predicts an effective way for designing high-performance spin-injected molecular devices.

An impurity intermediate band due to Pb doping induced promising thermoelectric performance of Ca5In2Sb6.

Band engineering is one of the effective approaches for designing ideal thermoelectric materials. Introducing an intermediate band in the band gap of semiconducting thermoelectric compounds may largely increase the carrier concentration and improve the electrical conductivity of these compounds. We test this hypothesis by Pb doping in Zintl Ca5In2Sb6. In the current work, we have systematically investigated the electronic structure and thermoelectric performances of substitutional doping with Pb on In sites at a doping level of 5% (0.2 e per cell) for Ca5In2Sb6 by using density functional theory combined with semi-classical Boltzmann theory. It is found that in contrast to Zn doping, Pb doping introduces a partially filled intermediate band in the band gap of Ca5In2Sb6, which originates from the Pb s states by weakly hybridizing with the Sb p states. Such an intermediate band dramatically increases the electrical conductivity of Ca5In2Sb6 and has little detrimental effect on its Seebeck coefficient, which may increase its thermoelectric figure of merit, ZT. Interestingly, a maximum ZT value of 2.46 may be achieved at 900 K for crystalline Pb-doped Ca5In2Sb6 when the carrier concentration is optimized. Therefore, Pb-doped Ca5In2Sb6 may be a promising thermoelectric material.

Predicted boron-carbide compounds: a first-principles study.

By using developed particle swarm optimization algorithm on crystal structural prediction, we have explored the possible crystal structures of B-C system. Their structures, stability, elastic properties, electronic structure, and chemical bonding have been investigated by first-principles calculations with density functional theory. The results show that all the predicted structures are mechanically and dynamically stable. An analysis of calculated enthalpy with pressure indicates that increasing of boron content will increase the stability of boron carbides under low pressure. Moreover, the boron carbides with rich carbon content become more stable under high pressure. The negative formation energy of predicted B5C indicates its high stability. The density of states of B5C show that it is p-type semiconducting. The calculated theoretical Vickers hardnesses of B-C exceed 40 GPa except B4C, BC, and BC4, indicating they are potential superhard materials. An analysis of Debye temperature and electronic localization function provides further understanding chemical and physical properties of boron carbide.

The relationship between the electronic structure and thermoelectric properties of Zintl compounds M2Zn5As4 (M = K, Rb).

The electronic structure and the thermoelectric properties of M2Zn5As4 (M = K, Rb) are studied by the first principles and the semiclassical BoltzTraP theory. It is determined that they are semiconductors with an indirect band gap of about 1 eV, which is much larger than that of Ca5Al2Sb6 (0.50 eV). The calculated electronic localization function indicates that they are typical Zintl bonding compounds. The combination of heavy and light bands near the valence band maximum may improve their thermoelectric performance. Rb2Zn5As4 exhibits relatively large Seebeck coefficients, high electrical conductivities, and the large "maximum" thermoelectric figures of merit (ZeT). Compared with Ca5Al2Sb6, the highest ZeT of Rb2Zn5As4 appears at relatively low carrier concentration. For Rb2Zn4As5, the p-type doping may achieve a higher thermoelectric performance than n-type doping. The thermoelectric properties of Rb2Zn5As4 are possibly superior to those of Ca5Al2Sb6.