Current-induced domain wall motion in a van der Waals ferromagnet Fe3GeTe2.

The manipulation of spin textures by spin currents is of fundamental and technological interest. A particularly interesting system is the 2D van der Waals ferromagnet Fe3GeTe2, in which Néel-type skyrmions have recently been observed. The origin of these chiral spin textures is of considerable interest. Recently, it was proposed that these derive from defects in the structure that lower the symmetry and allow for a bulk vector Dzyaloshinsky-Moriya interaction. Here, we demonstrate current-induced domain wall motion in Fe3GeTe2 flakes, in which the maximum domain wall velocity is an order of magnitude higher than those reported in previous studies. In heterostructures with Pt or W layers on top of the Fe3GeTe2 flakes, domain walls can be moved via a combination of spin transfer and spin-orbit torques. The competition between these torques leads to a change in the direction of domain wall motion with increasing magnitude of the injected current.

Generation of out-of-plane polarized spin current by spin swapping.

The generation of spin currents and their application to the manipulation of magnetic states is fundamental to spintronics. Of particular interest are chiral antiferromagnets that exhibit properties typical of ferromagnetic materials even though they have negligible magnetization. Here, we report the generation of a robust spin current with both in-plane and out-of-plane spin polarization in epitaxial thin films of the chiral antiferromagnet Mn3Sn in proximity to permalloy thin layers. By employing temperature-dependent spin-torque ferromagnetic resonance, we find that the chiral antiferromagnetic structure of Mn3Sn is responsible for an in-plane polarized spin current that is generated from the interior of the Mn3Sn layer and whose temperature dependence follows that of this layer's antiferromagnetic order. On the other hand, the out-of-plane polarized spin current is unrelated to the chiral antiferromagnetic structure and is instead the result of scattering from the Mn3Sn/permalloy interface. We substantiate the later conclusion by performing studies with several other non-magnetic metals all of which are found to exhibit out-of-plane polarized spin currents arising from the spin swapping effect.

Local and global energy barriers for chiral domain walls in synthetic antiferromagnet-ferromagnet lateral junctions.

Of great promise are synthetic antiferromagnet-based racetrack devices in which chiral composite domain walls can be efficiently moved by current. However, overcoming the trade-off between energy efficiency and thermal stability remains a major challenge. Here we show that chiral domain walls in a synthetic antiferromagnet-ferromagnet lateral junction are highly stable against large magnetic fields, while the domain walls can be efficiently moved across the junction by current. Our approach takes advantage of field-induced global energy barriers in the unique energy landscape of the junction that are added to the local energy barrier. We demonstrate that thermal fluctuations are equivalent to the magnetic field effect, thereby, surprisingly, increasing the energy barrier and further stabilizing the domain wall in the junction at higher temperatures, which is in sharp contrast to ferromagnets or synthetic antiferromagnets. We find that the threshold current density can be further decreased by tilting the junction without affecting the high domain wall stability. Furthermore, we demonstrate that chiral domain walls can be robustly confined within a ferromagnet region sandwiched on both sides by synthetic antiferromagnets and yet can be readily injected into the synthetic antiferromagnet regions by current. Our findings break the aforementioned trade-off, thereby allowing for versatile domain-wall-based memory, and logic, and beyond.

Setting of the magnetic structure of chiral kagome antiferromagnets by a seeded spin-orbit torque.

The current-induced spin-orbit torque switching of ferromagnets has had huge impact in spintronics. However, short spin-diffusion lengths limit the thickness of switchable ferromagnetic layers, thereby limiting their thermal stability. Here, we report a previously unobserved seeded spin-orbit torque (SSOT) by which current can set the magnetic states of even thick layers of the chiral kagome antiferromagnet Mn3Sn. The mechanism involves setting the orientation of the antiferromagnetic domains in a thin region at the interface with spin currents arising from an adjacent heavy metal while also heating the layer above its magnetic ordering temperature. This interface region seeds the resulting spin texture of the entire layer as it cools down and, thereby, overcomes the thickness limitation of conventional spin-orbit torques. SSOT switching in Mn3Sn can be extended beyond chiral antiferromagnets to diverse magnetic systems and provides a path toward the development of highly efficient, high-speed, and thermally stable spintronic devices.

Giant Spin Hall Effect and Spin-Orbit Torques in 5d Transition Metal-Aluminum Alloys from Extrinsic Scattering.

The generation of spin currents from charge currents via the spin Hall effect (SHE) is of fundamental and technological interest. Here, some of the largest SHEs yet observed via extrinsic scattering are found in a large class of binary compounds formed from a 5d element and aluminum, with a giant spin Hall angle (SHA) of ≈1 in the compound Os22 Al78 . A critical composition of the 5d element is found at which there is a structural phase boundary between poorly and highly textured crystalline material, where the SHA exhibits its largest value. Furthermore, a systematic increase is found in the spin Hall conductivity (SHC) and SHA at this critical composition as the atomic number of the 5d element is systematically increased. This clearly shows that the SHE and SHC are derived from extrinsic scattering mechanisms related to the potential mismatch between the 5d element and Al. These studies show the importance of extrinsic mechanisms derived from potential mismatch as a route to obtaining large spin Hall angles with high technological impact. Indeed, it is demonstrated that a state-of-the-art racetrack device has a several-fold increased current-induced domain wall efficiency using these materials as compared to prior-art materials.

Giant oscillatory Gilbert damping in superconductor/ferromagnet/superconductor junctions.

Interfaces between materials with differently ordered phases present unique opportunities for exotic physical properties, especially the interplay between ferromagnetism and superconductivity in the ferromagnet/superconductor heterostructures. The investigation of zero- and π-junctions has been of particular interest for both fundamental physical science and emerging technologies. Here, we report the experimental observation of giant oscillatory Gilbert damping in the superconducting niobium/nickel-iron/niobium junctions with respect to the nickel-iron thickness. This observation suggests an unconventional spin pumping and relaxation via zero-energy Andreev bound states that exist not only in the niobium/nickel-iron/niobium π-junctions but also in the niobium/nickel-iron/niobium zero-junctions. Our findings could be important for further exploring the exotic physical properties of ferromagnet/superconductor heterostructures and potential applications of ferromagnet π-junctions in quantum computing, such as half-quantum flux qubits.

Ionitronic manipulation of current-induced domain wall motion in synthetic antiferromagnets.

The current induced motion of domain walls forms the basis of several advanced spintronic technologies. The most efficient domain wall motion is found in synthetic antiferromagnetic (SAF) structures that are composed of an upper and a lower ferromagnetic layer coupled antiferromagnetically via a thin ruthenium layer. The antiferromagnetic coupling gives rise to a giant exchange torque with which current moves domain walls at maximum velocities when the magnetic moments of the two layers are matched. Here we show that the velocity of domain walls in SAF nanowires can be reversibly tuned by several hundred m/s in a non-volatile manner by ionic liquid gating. Ionic liquid gating results in reversible changes in oxidation of the upper magnetic layer in the SAF over a wide gate-voltage window. This changes the delicate balance in the magnetic properties of the SAF and, thereby, results in large changes in the exchange coupling torque and the current-induced domain wall velocity. Furthermore, we demonstrate an example of an ionitronic-based spintronic switch as a component of a potential logic technology towards energy-efficient, all electrical, memory-in-logic.

Increased Efficiency of Current-Induced Motion of Chiral Domain Walls by Interface Engineering.

Magnetic racetrack devices are promising candidates for next-generation memories. These spintronic shift-register devices are formed from perpendicularly magnetized ferromagnet/heavy metal thin-film systems. Data are encoded in domain wall magnetic bits that have a chiral Néel structure that is stabilized by an interfacial Dzyaloshinskii-Moriya interaction. The bits are manipulated by spin currents generated from electrical currents that are passed through the heavy metal layers. Increased efficiency of the current-induced domain wall motion is a prerequisite for commercially viable racetrack devices. Here, significantly increased efficiency with substantially lower threshold current densities and enhanced domain wall velocities is demonstrated by the introduction of atomically thin 4d and 5d metal "dusting" layers at the interface between the lower magnetic layer of the racetrack (here cobalt) and platinum. The greatest efficiency is found for dusting layers of palladium and rhodium, just one monolayer thick, for which the domain wall's velocity is increased by up to a factor of 3.5. Remarkably, when the heavy metal layer is formed from the dusting layer material alone, the efficiency is rather reduced by an order of magnitude. The results point to the critical role of interface engineering for the development of efficient racetrack memory devices.

Roadmap of spin-orbit torques.

Spin-orbit torque (SOT) is an emerging technology that enables the efficient manipulation of spintronic devices. The initial processes of interest in SOTs involved electric fields, spin-orbit coupling, conduction electron spins and magnetization. More recently interest has grown to include a variety of other processes that include phonons, magnons, or heat. Over the past decade, many materials have been explored to achieve a larger SOT efficiency. Recently, holistic design to maximize the performance of SOT devices has extended material research from a nonmagnetic layer to a magnetic layer. The rapid development of SOT has spurred a variety of SOT-based applications. In this Roadmap paper, we first review the theories of SOTs by introducing the various mechanisms thought to generate or control SOTs, such as the spin Hall effect, the Rashba-Edelstein effect, the orbital Hall effect, thermal gradients, magnons, and strain effects. Then, we discuss the materials that enable these effects, including metals, metallic alloys, topological insulators, two-dimensional materials, and complex oxides. We also discuss the important roles in SOT devices of different types of magnetic layers, such as magnetic insulators, antiferromagnets, and ferrimagnets. Afterward, we discuss device applications utilizing SOTs. We discuss and compare three-terminal and two-terminal SOT-magnetoresistive random-access memories (MRAMs); we mention various schemes to eliminate the need for an external field. We provide technological application considerations for SOT-MRAM and give perspectives on SOT-based neuromorphic devices and circuits. In addition to SOT-MRAM, we present SOT-based spintronic terahertz generators, nano-oscillators, and domain wall and skyrmion racetrack memories. This paper aims to achieve a comprehensive review of SOT theory, materials, and applications, guiding future SOT development in both the academic and industrial sectors.

Nonlinear Magnetization Dynamics Driven by Strong Terahertz Fields.

We present a comprehensive experimental and numerical study of magnetization dynamics in a thin metallic film triggered by single-cycle terahertz pulses of ∼20 MV/m electric field amplitude and ∼1 ps duration. The experimental dynamics is probed using the femtosecond magneto-optical Kerr effect, and it is reproduced numerically using macrospin simulations. The magnetization dynamics can be decomposed in three distinct processes: a coherent precession of the magnetization around the terahertz magnetic field, an ultrafast demagnetization that suddenly changes the anisotropy of the film, and a uniform precession around the equilibrium effective field that is relaxed on the nanosecond time scale, consistent with a Gilbert damping process. Macrospin simulations quantitatively reproduce the observed dynamics, and allow us to predict that novel nonlinear magnetization dynamics regimes can be attained with existing tabletop terahertz sources.

Chiral domain wall motion in unit-cell thick perpendicularly magnetized Heusler films prepared by chemical templating.

Heusler alloys are a large family of compounds with complex and tunable magnetic properties, intimately connected to the atomic scale ordering of their constituent elements. We show that using a chemical templating technique of atomically ordered X'Z' (X' = Co; Z' = Al, Ga, Ge, Sn) underlayers, we can achieve near bulk-like magnetic properties in tetragonally distorted Heusler films, even at room temperature. Excellent perpendicular magnetic anisotropy is found in ferrimagnetic X3Z (X = Mn; Z = Ge, Sn, Sb) films, just 1 or 2 unit-cells thick. Racetracks formed from these films sustain current-induced domain wall motion with velocities of more than 120 m s-1, at current densities up to six times lower than conventional ferromagnetic materials. We find evidence for a significant bulk chiral Dzyaloshinskii-Moriya exchange interaction, whose field strength can be systematically tuned by an order of magnitude. Our work is an important step towards practical applications of Heusler compounds for spintronic technologies.

Exchange coupling torque in ferrimagnetic Co/Gd bilayer maximized near angular momentum compensation temperature.

Highly efficient current-induced motion of chiral domain walls was recently demonstrated in synthetic antiferromagnetic (SAF) structures due to an exchange coupling torque (ECT). The ECT derives from the antiferromagnetic exchange coupling through a ruthenium spacer layer between the two perpendicularly magnetized layers that comprise the SAF. Here we report that the same ECT mechanism applies to ferrimagnetic bi-layers formed from adjacent Co and Gd layers. In particular, we show that the ECT is maximized at the temperature TA where the Co and Gd angular momenta balance each other, rather than at their magnetization compensation temperature TM. The current induced velocity of the domain walls is highly sensitive to longitudinal magnetic fields but we show that this not the case near TA. Our studies provide new insight into the ECT mechanism for ferrimagnetic systems. The high efficiency of the ECT makes it important for advanced domain wall based spintronic devices.

Role of Micromagnetic States on Spin-Orbit Torque-Switching Schemes.

Three-terminal spintronic memory devices based on the controlled manipulation of the proximate magnetization of a magnetic nanoelement using spin-orbit torques (SOTs) have attracted growing interest recently. These devices are nonvolatile, can operate at high speeds with low error rates, and have essentially infinite endurance, making them promising candidates for high-speed cache memory. Typically, the magnetization and spin polarization in these devices are collinear to one another, leading to a finite incubation time associated with the switching process. While switching can also be achieved when the magnetization easy axis and spin polarization are noncollinear, this requires the application of an external magnetic field for deterministic switching. Here, we demonstrate a novel SOT scheme that exploits non-uniform micromagnetic states to achieve deterministic switching when the spin polarization and magnetic moment axis are noncollinear to one another in the absence of external magnetic field. We also explore the use of a highly efficient SOT generator, oxygen-doped tungsten in the three-terminal device geometry, confirming its -50% spin Hall angle. Lastly, we illustrate how this scheme may potentially be useful for nanomagnetic logic applications.

Separation of enantiomers by their enantiospecific interaction with achiral magnetic substrates.

It is commonly assumed that recognition and discrimination of chirality, both in nature and in artificial systems, depend solely on spatial effects. However, recent studies have suggested that charge redistribution in chiral molecules manifests an enantiospecific preference in electron spin orientation. We therefore reasoned that the induced spin polarization may affect enantiorecognition through exchange interactions. Here we show experimentally that the interaction of chiral molecules with a perpendicularly magnetized substrate is enantiospecific. Thus, one enantiomer adsorbs preferentially when the magnetic dipole is pointing up, whereas the other adsorbs faster for the opposite alignment of the magnetization. The interaction is not controlled by the magnetic field per se, but rather by the electron spin orientations, and opens prospects for a distinct approach to enantiomeric separations.

Highly Asymmetric Chiral Domain-Wall Velocities in Y-Shaped Junctions.

Recent developments in spin-orbit torques allow for highly efficient current-driven domain wall (DW) motion in nanowires with perpendicular magnetic anisotropy. Here, we show that chiral DWs can be driven into nonequilibrium states that can persist over tens of nanoseconds in Y-shaped magnetic nanowire junctions that have an input and two symmetric outputs. A single DW that is injected into the input splits and travels at very different velocities in the two output branches until it reaches its steady-state velocity. We find that this is due to the disparity between the fast temporal evolution of the spin current derived spin-orbit torque and a much-slower temporal evolution of the DMI-derived torque. Changing the DW polarity inverts the velocity asymmetry in the two output branches, a property that we use to demonstrate the sorting of domains.

Ensemble-averaged Rabi oscillations in a ferromagnetic CoFeB film.

Rabi oscillations describe the process whereby electromagnetic radiation interacts coherently with spin states in a non-equilibrium interaction. To date, Rabi oscillations have not been studied in one of the most common spin ensembles in nature: spins in ferromagnets. Here, using a combination of femtosecond laser pulses and microwave excitations, we report the classical analogue of Rabi oscillations in ensemble-averaged spins of a ferromagnet. The microwave stimuli are shown to extend the coherence-time resulting in resonant spin amplification. The results we present in a dense magnetic system are qualitatively similar to those reported previously in semiconductors which have five orders of magnitude fewer spins and which require resonant optical excitations to spin-polarize the ensemble. Our study is a step towards connecting concepts used in quantum processing with spin-transport effects in ferromagnets. For example, coherent control may become possible without the complications of driving an electromagnetic field but rather by using spin-polarized currents.

Novel domain wall dynamics in synthetic antiferromagnets.

In this article, we review fascinating new mechanisms on recently observed remarkable current driven domain wall motion in nanowires formed from perpendicularly magnetized synthetic antiferromagnets interfaced with heavy metallic layers, sources of spin-orbit torques. All the associated torques such as volumetric adiabatic and non-adiabatic spin-transfer-torque, spin-orbit torques, shape anisotropy field torques, Dzyaloshinkii-Moriya interaction torques and most importantly a new powerful torque, exchange coupling torque, will be discussed based on an analytical model that provides an intuitive description of domain wall dynamics in synthetic ferromagnets as well as synthetic antiferromagnets. In addition, the current driven DW motion in the presence of in-plane fields will be investigated, thus deepening our knowledge about the role of the exchange coupling torque, which will be of potential use for application to various novel spintronic devices.

Dramatic influence of curvature of nanowire on chiral domain wall velocity.

The use of current pulses to move domain walls along nanowires is one of the most exciting developments in spintronics over the past decade. We show that changing the sign of the curvature of a nanowire changes the speed of chiral Néel domain walls in perpendicularly magnetized nanowires by up to a factor of 10. The domain walls have an increased or decreased velocity in wires of a given curvature, independent of the domain wall chirality and the sign of the current-induced spin-orbit torques. Thus, adjacent domain walls move at different speeds. For steady motion of domain walls along the curved nanowire, the torque must increase linearly with the radius, which thereby results in a width-dependent tilting of the domain wall. We show that by using synthetic antiferromagnetic nanowires, the influence of the curvature on the domain wall's velocity is eliminated, and all domain walls move together, emphasizing the use of such structures for spintronic applications.