Engineering Grain Boundaries in Two-Dimensional Electronic Materials.

Engineering the boundary structures in 2D materials provides an unprecedented opportunity to program the physical properties of the materials with extensive tunability and realize innovative devices with advanced functionalities. However, structural engineering technology is still in its infancy, and creating artificial boundary structures with high reproducibility remains difficult. In this review, various emergent properties of 2D materials with different grain boundaries, and the current techniques to control the structures, are introduced. The remaining challenges for scalable and reproducible structure control and the outlook on the future directions of the related techniques are also discussed.

Wafer-Scale Programmed Assembly of One-Atom-Thick Crystals.

Crystalline films offer various physical properties based on the modulation of their thicknesses and atomic structures. The layer-by-layer assembly of atomically thin crystals provides a powerful means to arbitrarily design films at the atomic level, which are unattainable with existing growth technologies. However, atomically clean assembly of the materials with high scalability and reproducibility remains challenging. We report programmed crystal assembly of graphene and monolayer hexagonal boron nitride, assisted by van der Waals interactions, to form wafer-scale films of pristine interfaces with near-unity yield. The atomic configurations of the films are tailored with layer-resolved compositions and in-plane crystalline orientations. We demonstrate batch-fabricated tunnel device arrays with modulation of the resistance over orders of magnitude by thickness control of the hexagonal boron nitride barrier with single-atom precision and large-scale, twisted multilayer graphene with programmable electronic band structures and crystal symmetries. Our results constitute an important development in the artificial design of large-scale films.

Graphene Nanoribbon Grids of Sub-10 nm Widths with High Electrical Connectivity.

Quasi-one-dimensional (1D) graphene nanoribbons (GNRs) have finite band gaps and active edge states and therefore can be useful for advanced chemical and electronic devices. Here, we present the formation of GNR grids via seed-assisted chemical vapor deposition on Ge(100) substrates. Nucleation seeds, provided by unzipped C60, initiated growth of the GNRs. The GNRs grew toward two orthogonal directions in an anisotropic manner, templated by the single crystalline substrate, thereby forming grids that had lateral stitching over centimeter scales. The spatially uniform grid can be transferred and patterned for batch fabrication of devices. The GNR grids showed percolative conduction with a high electrical sheet conductance of ∼2 µS·sq and field-effect mobility of ∼5 cm2/(V·s) in the macroscopic channels, which confirm excellent lateral stitching between domains. From transconductance measurements, the intrinsic band gap of GNRs with sub-10 nm widths was estimated as ∼80 meV, similar to theoretical expectation. Our method presents a scalable way to fabricate atomically thin elements with 1D characteristics for integration with various nanodevices.

Pristine Graphene Insertion at the Metal/Semiconductor Interface to Minimize Metal-Induced Gap States.

Metal (M) contact with a semiconductor (S) introduces metal-induced gap states (MIGS), which makes it difficult to study the intrinsic electrical properties of S. A bilayer of metal with graphene (Gr), i.e., a M/Gr bilayer, may form a contact with S to minimize MIGS. However, it has been challenging to realize the pristine M/Gr/S junctions without interfacial contaminants, which result in additional interfacial states. Here, we successfully demonstrate the atomically clean M/Gr/n-type silicon (Si) junctions via all-dry transfer of M/Gr bilayers onto Si. The fabricated M/Gr/Si junctions significantly increase the current density J at reverse bias, compared to those of M/Si junctions without a Gr interlayer (e.g., by 105 times for M = Au in Si(111)). The increase of the reverse J by a Gr interlayer is more prominent in Si(111) than in Si(100), whereas in M/Si junctions, J is independent of the type of Si surface. The different transport data between M/Gr/Si(111) and M/Gr/Si(100) are consistent with Fermi-level pinning by different surface states of Si(111) and Si(100). Our findings suggest the effective way to suppress MIGS by an introduction of the clean Gr interlayer, which paves the way to study intrinsic electrical properties of various materials.

All-Dry Transfer of Graphene Film by van der Waals Interactions.

We report a method that uses van der Waals interactions to transfer continuous, high-quality graphene films from Ge(110) to a different substrate held by hexagonal boron nitride carriers in a clean, dry environment. The transferred films are uniform and continuous with low defect density and few charge puddles. The transfer is effective because of the weak interfacial adhesion energy between graphene and Ge. Based on the minimum strain energy required for the isolation of film, the upper limit of the interfacial adhesion energy is estimated to be 23 meV per carbon atom, which makes graphene/Ge(110) the first as-grown graphene film that has a substrate adhesion energy lower than that of typical van der Waals interactions between layered materials. Our results suggest that graphene on Ge can serve as an ideal material platform to be integrated with other material systems by a clean assembly process.

Safety assessment of chromium by exposure from cosmetic products.

Low level impurities often reside in cosmetic products. The aim of the present study was to estimate the human exposure to chromium from cosmetic products purchased at a local market in South Korea, and to assess the risk on public health. Hexavalent chromium is an impurity substance that contaminates cosmetic products during manufacture. The potential for chromium to induce and elicit allergic contact dermatitis, as well as the degree of chromium exposure from cosmetic products, were assessed. Chromium exposure was estimated using the chromium concentrations found in cosmetic samples taken from the local market along with the expected user pattern data that was taken from the literature. Of the cosmetics we tested and available for purchase on the Korean market, seven had chromium contents above the detection limit of 0.1 ppm (0.1 microg/mL), ranging from 0.2 to 3.15 ppm. In risk assessment, scientifically defensible dose-response relationships must be established for the end points of concern. In the case of chromium contaminated cosmetic products, this includes conducting dose-response assessments for allergic contact dermatitis following dermal exposure. This dose-response information can then be integrated with site-specific exposure assessments to regulate consumer safety by use of these products. We found that dermal exposure to chromium concentrations ranging from 0.0002 to 0.003 microg/cm(2) does not appear to cause concern for eliciting allergic contact dermatitis.

Lithiasis in a heterotopic pancreas of the stomach.

A heterotopic pancreas is a relatively uncommon abnormality and usually of no clinical importance. A heterotopic pancreas is subject to various pathologic changes occurring in the pancreas, however, such as acute pancreatitis, cyst or abscess formation, pancreatic cancer, and islet cell tumor. We describe a rare case of a heterotopic pancreas presenting as a gastric submucosal mass with punctate calcifications occurring in a 43-year-old man.