Activation Enhancement and Grain Size Improvement for Poly-Si Channel Vertical Transistor by Laser Thermal Annealing in 3D NAND Flash.

The bit density is generally increased by stacking more layers in 3D NAND Flash. Lowering dopant activation of select transistors results from complex integrated processes. To improve channel dopant activation, the test structure of vertical channel transistors was used to investigate the influence of laser thermal annealing on dopant activation. The activation of channel doping by different thermal annealing methods was compared. The laser thermal annealing enhanced the channel activation rate by at least 23% more than limited temperature rapid thermal annealing. We then comprehensively explore the laser thermal annealing energy density on the influence of Poly-Si grain size and device performance. A clear correlation between grain size mean and grain size sigma, large grain size mean and sigma with large laser thermal annealing energy density. Large laser thermal annealing energy density leads to tightening threshold voltage and subthreshold swing distribution since Poly-Si grain size regrows for better grain size distribution with local grains optimization. As an enabler for next-generation technologies, laser thermal annealing will be highly applied in 3D NAND Flash for better device performance with stacking more layers, and opening new opportunities of novel 3D architectures in the semiconductor industry.

A Novel Capacitorless 1T DRAM with Embedded Oxide Layer.

A novel vertical dual surrounding gate transistor with embedded oxide layer is proposed for capacitorless single transistor DRAM (1T DRAM). The embedded oxide layer is innovatively used to improve the retention time by reducing the recombination rate of stored holes and sensing electrons. Based on TCAD simulations, the new structure is predicted to not only have the characteristics of fast access, random read and integration of 4F2 cell, but also to realize good retention and deep scaling. At the same time, the new structure has the potential of scaling compared with the conventional capacitorless 1T DRAM.

Auditory event-related potentials based on name stimuli: A pilot study.

In recent years, diagnostic studies of brain disorders based on auditory event-related potentials (AERP) have become a hot topic. Research showed that AERP might help to detect patient consciousness, especially using the subjects' own name (SON). In this study, we conducted a preliminary analysis of the brain response to Chinese name stimuli. Twelve subjects participated in this study. SONs were used as target stimuli for each trial. The names used for non-target stimuli were divided into three Chinese character names condition (3CC) and two Chinese characters names condition (2CC). Thus, each subject was required to be in active (silent counting) and passive mode (without counting) with four conditions [(passive, active) × (3CC, 2CC)]. We analyzed the spatio-temporal features for each condition, and we used SVM for target vs. non-target classification. The results showed that the passive mode under 3CC conditions showed a similar brain response to the active mode, and when 3CC was used as a non-target stimulus, the brain response induced by the target stimulus would have a better interaction than 2CC. We believe that the passive mode 3CC may be a good paradigm to replace the active mode which might need more attention from subjects. The results of this study can provide certain guidelines for the selection and optimization of the paradigm of auditory event-related potentials based on name stimulation.

Study on the effect of nontarget types on name based auditory event-related potentials.

Exploring the brain response to stimuli of healthy people in passive state is helpful to understand the brain response mechanism of unresponsive people. Event-related potential (ERP) can reflect the time synchronization of potentials, which is a feasible objective electrophysiological index reflecting the functional status of the brain. In this paper, we used the subjects' own name (SON) as target stimuli and compared with the nontarget stimuli (others' name) of Three Chinese Characters (3CC) and Two Chinese Characters (2CC) with the same stimuli duration (600ms) and inter stimuli interval (500ms-800ms）. Thirteen healthy subjects attended in this study with four conditions ( [active, passive]×[3CC, 2CC] ). We compared the ERP waveforms, the behavior performance, and the classification of four different conditions. ERP results show that the P300 amplitude of conditions with 3CC nontargets is higher than that of conditions with 2CC nontargets. Behavioral results show that the grand accuracy is 97% when the nontargets are 3CC, while the grand accuracy is only 94% when the nontargets are 2CC. The reaction time is also different from the two nontargets (605ms with 3CC vs 635ms with 2CC). Classification results illustrate that in active condition, the accuracy rate is 82.1% when the nontarget is 3CC, and that is 80.9% in passive condition, which are 4.2% and 6.4% higher than the accuracy rate under 2CC cases in both active and passive conditions. This study can provide a scheme for grading diagnosis of consciousness detection, and further applying to clinical evaluation.Clinical Relevance- This study can provide a better paradigm basis for clinical evaluation of unresponsive patients (such as disorder of consciousness, DOC) and may become an effective auxiliary means for clinical rating scales.

Multi-terminal ionic-gated low-power silicon nanowire synaptic transistors with dendritic functions for neuromorphic systems.

Neuromorphic computing systems have shown powerful capability in tasks, such as recognition, learning, classification and decision-making, which are both challenging and inefficient in using the traditional computation architecture. The key elements including synapses and neurons, and their feasible hardware implementation are essential for practical neuromorphic computing. However, most existing synaptic devices used to emulate functions of a single synapse and the synapse-based networks are more energy intensive and less sustainable than their biological counterparts. The dendritic functions such as integration of spatiotemporal signals and spike-frequency coding characteristics have not been well implemented in a single synaptic device and thus play an imperative role in future practical hardware-based spiking neural networks. Moreover, most emerging synaptic transistors are fabricated by nanofabrication processes without CMOS compatibility for further wafer-scale integration. Herein, we demonstrate a novel ionic-gated silicon nanowire synaptic field-effect transistor (IGNWFET) with low power consumption (<400 fJ per switching event) based on the standard CMOS process platform. For the first time, the dendritic integration and dual-synaptic dendritic computations (such as "Add" and "Subtraction") could be realized by processing frequency coded spikes using a single device. Meanwhile, multi-functional characteristics of artificial synapses including the short-term and long-term synaptic plasticity, paired pulse facilitation and high-pass filtering were also successfully demonstrated based on 40 nm wide IGNWFETs. The migration of ions in polymer electrolyte and trapping in high-k dielectric were also experimentally studied in-depth to understand the short-term plasticity and long-term plasticity. Combined with statistical uniformity across a 4-inch wafer, the comprehensive performance of IGNWFET demonstrates its potential application in future biologically emulated neuromorphic systems.