RESUMEN
The development of wearable systems stimulate the exploration of flexible broadband photodetectors with high responsivity and stability. In this paper, we propose a facile liquid-exfoliating method to prepare SnS2 nanosheets with high-quality crystalline structure and optoelectronic properties. A flexible photodetector is fabricated using the SnS2 nanosheets with graphene-poly[bis(4-phenyl) (2,4,6-trimethylphenyl) amine (PTAA) hybrid structure. The liquid-exfoliated SnS2 nanosheets enable the photodetection from ultraviolet to near infrared with high responsivity and detectivity. The flexible broadband photodetector demonstrates a maximum responsivity of 1 × 105 A/W, 3.9 × 104 A/W, 8.6 × 102 A/W and 18.4 A/W under 360 nm, 405 nm, 532 nm, and 785 nm illuminations, with specific detectivity up to ~1012 Jones, ~1011 Jones, ~109 Jones, and ~108 Jones, respectively. Furthermore, the flexible photodetector exhibits nearly invariable performance over 3000 bending cycles, rendering great potentials for wearable applications.
RESUMEN
In recent years, using two-dimensional (2D) materials to realize broadband photodetection has become a promising area in optoelectronic devices. Here, we successfully synthesized SnSe nanosheets (NSs) by a facile tip ultra-sonication method in water-ethanol solvent which was eco-friendly. The carrier dynamics of SnSe NSs was systematically investigated via a femtosecond transient absorption spectroscopy in the visible wavelength regime and three decay components were clarified with delay time of τ1 = 0.77 ps, τ2 = 8.3 ps, and τ3 = 316.5 ps, respectively, indicating their potential applications in ultrafast optics and optoelectronics. As a proof-of-concept, the photodetectors, which integrated SnSe NSs with monolayer graphene, show high photoresponsivities and excellent response speeds for different incident lasers. The maximum photo-responsivities for 405, 532, and 785 nm were 1.75 × 104 A/W, 4.63 × 103 A/W, and 1.52 × 103 A/W, respectively. The photoresponse times were ~22.6 ms, 11.6 ms, and 9.7 ms. This behavior was due to the broadband light response of SnSe NSs and fast transportation of photocarriers between the monolayer graphene and SnSe NSs.
RESUMEN
A coupled graphene structure (CGS) is proposed to obtain an electrically tunable sub-femtometer (sub-fm) dimensional resolution. According to analytical and numerical investigations, the CGS can support two branches of localized surface plasmon resonances (LSPRs), which park at the dielectric spacer between two pieces of graphene. The coupled efficiencies of the odd-order modes are even four orders of magnitude higher than that of the even-order modes. In particular, a sub-fm resolution for detecting the change in the spacer thickness can be reached using the lowest order LSPR mode. The LSPR wavelength and the dimensional differential resolution can be electrically-tuned from 9.5 to 33 µm and from 4.3 to 15 nm/pm, respectively, by modifying the chemical potential of the graphene via the gate voltage. Furthermore, by replacing the graphene ribbon (GR) at the top of the CGS with multiple GRs of different widths, a resonant frequency comb in the absorption spectrum with a tunable frequency interval is generated, which can be used to detect the changes in spacer thicknesses at different locations with sub-fm resolution.
RESUMEN
Synthesizing quantum dots (QDs) using simple methods and utilizing them in optoelectronic devices are active areas of research. In this paper, we fabricated SnSe2 QDs via sonication and a laser ablation process. Deionized water was used as a solvent, and there were no organic chemicals introduced in the process. It was a facile and environmentally-friendly method. We demonstrated an ultraviolet (UV)-detector based on monolayer graphene and SnSe2 QDs. The photoresponsivity of the detector was up to 7.5 × 106 mAW-1, and the photoresponse time was ~0.31 s. The n-n heterostructures between monolayer graphene and SnSe2 QDs improved the light absorption and the transportation of photocarriers, which could greatly increase the photoresponsivity of the device.
