SARS-CoV-2 N protein-induced Dicer, XPO5, SRSF3, and hnRNPA3 downregulation causes pneumonia.

Though RNAi and RNA-splicing machineries are involved in regulating severe acute respiratory syndrome coronavirus 2 (SARS-CoV-2) replication, their precise roles in coronavirus disease 2019 (COVID-19) pathogenesis remain unclear. Herein, we show that decreased RNAi component (Dicer and XPO5) and splicing factor (SRSF3 and hnRNPA3) expression correlate with increased COVID-19 severity. SARS-CoV-2 N protein induces the autophagic degradation of Dicer, XPO5, SRSF3, and hnRNPA3, inhibiting miRNA biogenesis and RNA splicing and triggering DNA damage, proteotoxic stress, and pneumonia. Dicer, XPO5, SRSF3, and hnRNPA3 knockdown increases, while their overexpression decreases, N protein-induced pneumonia's severity. Older mice show lower expression of Dicer, XPO5, SRSF3, and hnRNPA3 in their lung tissues and exhibit more severe N protein-induced pneumonia than younger mice. PJ34, a poly(ADP-ribose) polymerase inhibitor, or anastrozole, an aromatase inhibitor, ameliorates N protein- or SARS-CoV-2-induced pneumonia by restoring Dicer, XPO5, SRSF3, and hnRNPA3 expression. These findings will aid in developing improved treatments for SARS-CoV-2-associated pneumonia.

Chirality-Dependent Valley Polarization in Magnetic van der Waals Heterostructures via Spin-Selective Charge Transfer.

Magnetic proximity interaction provides a promising route to manipulate the spin and valley degrees of freedom in van der Waals heterostructures. Here, we report a control of valley pseudospin in the WS2/MoSe2 heterostructure by utilizing the magnetic proximity effect of few-layered CrBr3 and, for the first time, observe a substantial difference in valley polarization of intra/interlayer excitons under different circularly polarized laser excitations, referred to as chirality-dependent valley polarization. Theoretical and experimental results reveal that the spin-selective charge transfer between MoSe2 and CrBr3, as well as between MoSe2 and WS2, is mostly responsible for the chiral feature of valley polarization in comparison with the proximity exchange field. This means that a long-distance manipulation of exciton behaviors in multilayer heterostructures can be achieved through spin-selective charge transfer. This work marks a significant advancement in the control of spin and valley pseudospin in multilayer structures.

Phase-Dependent Magnetic Proximity Modulations on Valley Polarization and Splitting.

Proximate-induced magnetic interactions present a promising strategy for precise manipulation of valley degrees of freedom. Taking advantage of the splendid valleytronic platform of transition metal dichalcogenides, magnetic two-dimensional VSe2 with different phases are introduced to intervene in the spin of electrons and modulate their valleytronic properties. When constructing the heterostructures, 1T-VSe2/WX2 (X = S and Se) showcases significant improvement in the valley polarizations at room temperature, while 2H-VSe2/WX2 exhibits superior performance at low temperatures and demonstrates heightened sensitivity to the external magnetic field. Simultaneously, considerable valley splitting with a large geff factor up to -29.0 is observed in 2H-VSe2/WS2, while it is negligible in 1T-VSe2/WX2. First-principles calculations reveal a phase-dependent magnetic proximity mechanism on the valleytronic modulations, which is dominated by interfacial charge transfer in 1T-VSe2/WX2 and the proximity exchange field in 2H-VSe2/WX2 heterostructures. The effective control over valley degrees of freedom will bridge the valleytronic physics and devices, rendering enormous potential in the field of valley quantum applications.

Strain modulation of the spin-valley polarization in monolayer manganese chalcogenophosphates alloys.

Inspired by the profound physical connotations and potential applications of the spintronics and valleytronics, two-dimensional (2D) monolayer manganese chalcogenophosphates alloys are constructed, and the strain modulated spin-valley characteristics are investigated through the first principles calculations. For both the MnFePS3and MnFePSe3, the conductivity can be tuned reversibly between semiconductive and half-metallic, while and magnetic stability is controllable between ferromagnetism and antiferromagnetism. Large valley splitting of up to 1000 meV is achieved in MnFePS3under a -4% strain. Simultaneous spin splitting of 219 meV and valley splitting of 160 meV are acquired in MnFePS3under a 4% strain. Strain tunable magnetic moment and interaction between Mn, Fe and S/Se atoms are revealed as the internal mechanisms of controlling the magnetic stability, spin and valley polarizations in the two structures. All the findings in this work provide a strategy for the manipulation of spin and valley degrees of freedom in 2D magnetic materials.

Strain manipulation of the polarized optical response in two-dimensional GaSe layers.

We report tunable optical performances of gallium selenide (GaSe) layers in phonon vibrations, band edge emission, circular polarization, and anisotropic response via strain manipulation. By applying a uniaxial tensile strain, frequency shift and peak broadening are observed in Raman spectra. A shrink in bandgap is demonstrated in photoluminescence (PL) spectra and confirmed by first-principles calculations. A continuously growing circular polarization from 3.8% to 37.9% is detected at room temperature when the tensile strain is increased from 0% to 0.35%, which is almost a ten-fold enhancement compared with that under the non-resonant excitation. Through the theoretical calculations, the decrease in exciton lifetime is revealed to be responsible for the overwhelming enhanced circular polarization. By deforing the lattices of GaSe layers, the Raman intensity was found to be suppressed in the strain direction. The intrinsic fourfold-symmetry of the E2g1 mode in angle-dependent Raman spectra is tuned to a two-fold symmetry. An anisotropic PL response is further regulated by changing the structural symmetry of GaSe lattices. A maximal polarization of 66.0% is achieved when the detection polarizations are perpendicular to the strain direction. All the findings in this study suggest a route for tuning the optical properties, particularly the polarized response in two-dimensional (2D) materials, and provide a strategy for developing flexible and anisotropic 2D optical devices.

Deeply Exploring Anisotropic Evolution toward Large-Scale Growth of Monolayer ReS2.

Among large numbers of transition metal dichalcogenides (TMDCs), monolayer rhenium disulfide (ReS2) is of particular interest due to its unique structural anisotropy, which opens up unprecedented opportunities in dichroic atomical electronics. Understanding the domain structure and controlling the anisotropic evolution of ReS2 during the growth is considered critical for increasing the domain size toward a large-scale growth of monolayer ReS2. Herein, by employing angle-resolved Raman spectroscopy, we reveal that the hexagonal ReS2 domain is constructed by six well-defined subdomains with each b-axis parallel to the diagonal of the hexagon. By further combining the first-principles calculations and the transmission electron microscopy (TEM) characterization, a dislocation-involved anisotropic evolution is proposed to explain the formation of the domain structures and understand the limitation of the domain size. Based on these findings, growth rates of different crystal planes are well controlled to enlarge the domain size, and moreover, single-crystal domains with a triangle shape are obtained. With the improved domain size, large-scale uniform, strictly monolayer ReS2 films are grown further. Scalable field-effect transistor (FET) arrays are constructed, which show good electrical performances comparable or even superior to that of the single domains reported at room temperature. This work not only sheds light on comprehending the novel growth mechanism of ReS2 but also offers a robust and controllable strategy for the synthesis of large-area and high-quality two-dimensional materials with low structural symmetry.

Polarization-Controllable Plasmonic Enhancement on the Optical Response of Two-Dimensional GaSe Layers.

Resonant plasmonic coupling has been considered as a promising strategy to enhance the optical response and manipulate the polarization of two-dimensional (2D) layer materials toward the practical applications. Here, a hybrid structure with periodic Ag nanoprism arrays was designed and fabricated on 2D GaSe layers to enhance these optical properties. By using the optimized hybrid structure with well-matched resonance, significant enhanced Raman scattering and band edge emission were successfully realized, and it is also interestingly found that the higher enhancement would be achieved while decreasing the thickness of GaSe layers. Theoretical simulation indicated that the strongly enhanced local field and the modified charge densities are the main reasons. By further introducing the patterned gratings on the plasmonic hybrid structure, selective excitation with controllable polarization was readily realized, besides the strongly enhanced photoluminescence intensity. This work provides a strategy for the plasmonic engineering of polarization controllable 2D optoelectronic devices.

Synthesis of Wafer-Scale Monolayer WS2 Crystals toward the Application in Integrated Electronic Devices.

Two-dimensional transition-metal dichalcogenides (TMDCs) possess unique electronic and optical properties, which open up a new opportunity for atomically thin optoelectronic devices. Synthesizing large-scale monolayer TMDCs on the SiO2/Si substrate is crucial for practical applications, however, it remains a big challenge. In this work, a method which combines chemical vapor deposition (CVD) and thermal evaporation was employed to grow monolayer tungsten disulfide (WS2) crystals. Through controlling the density and the distribution of W precursors, a wafer-scale continuous uniform WS2 film was achieved, with the structural and spectral characterizations confirming a monolayer configuration and a high crystalline quality. Wafer-scale field-effect transistor arrays based on the monolayer WS2 were fabricated. The devices show superior electrical performances, and the maximal mobility is almost 1 order of magnitude higher than those of CVD-grown large-scale TMDC devices reported so far.