SmartSpring: A Low-Cost Wearable Haptic VR Display with Controllable Passive Feedback.

With the development of virtual reality, the practical requirements of the wearable haptic interface have been greatly emphasized. While passive haptic devices are commonly used in virtual reality, they lack generality and are difficult to precisely generate continuous force feedback to users. In this work, we present SmartSpring, a new solution for passive haptics, which is inexpensive, lightweight and capable of providing controllable force feedback in virtual reality. We propose a hybrid spring-linkage structure as the proxy and flexibly control the mechanism for adjustable system stiffness. By analyzing the structure and force model, we enable a smart transform of the structure for producing continuous force signals. We quantitatively examine the real-world performance of SmartSpring to verify our model. By asymmetrically moving or actively pressing the end-effector, we show that our design can further support rendering torque and stiffness. Finally, we demonstrate the SmartSpring in a series of scenarios with user studies and a just noticeable difference analysis. Experimental results show the potential of the developed haptic display in virtual reality.

Metal-Assisted Chemical Etching for Anisotropic Deep Trenching of GaN Array.

Realizing the anisotropic deep trenching of GaN without surface damage is essential for the fabrication of GaN-based devices. However, traditional dry etching technologies introduce irreversible damage to GaN and degrade the performance of the device. In this paper, we demonstrate a damage-free, rapid metal-assisted chemical etching (MacEtch) method and perform an anisotropic, deep trenching of a GaN array. Regular GaN microarrays are fabricated based on the proposed method, in which CuSO4 and HF are adopted as etchants while ultraviolet light and Ni/Ag mask are applied to catalyze the etching process of GaN, reaching an etching rate of 100 nm/min. We comprehensively explore the etching mechanism by adopting three different patterns, comparing a Ni/Ag mask with a SiN mask, and adjusting the etchant proportion. Under the catalytic role of Ni/Ag, the GaN etching rate nearby the metal mask is much faster than that of other parts, which contributes to the formation of deep trenches. Furthermore, an optimized etchant is studied to restrain the disorder accumulation of excessive Cu particles and guarantee a continuous etching result. Notably, our work presents a novel low-cost MacEtch method to achieve GaN deep etching at room temperature, which may promote the evolution of GaN-based device fabrication.