Modulation of charge structure in Bi/Bi2O3-In2O3@C for efficient CO2 electroreduction to formate.

Electrocatalytic CO2 reduction reaction (ECO2RR) to value-added chemicals is of significant importance to control CO2 emission and reach carbon neutrality. Herein, Bi/Bi2O3-In2O3@C electrocatalyst with nanosheet arrays is successfully fabricated by a facile solvothermal with subsequent calcination process. It is found that the electron structure of Bi/Bi2O3-In2O3@C can be adjusted by the synergistic effects of Bi-In hetero-diatoms, which can significantly enhance its inherent catalytic activity. As expected, it requires a maximum HCOOH faradaic efficiency (FEHCOOH) of 97.6 % at -1.1 V vs. Reversible Hydrogen Electrode (RHE), which further delivers over 90 % at a wide potential range of -0.8 to -1.4 V vs. RHE, and exhibits high stability of 90.1 % over 60-h long-term test. In-situ Raman analysis is performed to explore the mechanism of its excellent stability. Meanwhile, in-situ attenuated total reflection-Fourier-transform infrared (ATR-FTIR) analysis combined with theoretical calculations reveal that the hetero-bridging absorption of *OCHO and d-d orbital coupling effect can regulate d-band center of Bi/Bi2O3-In2O3@C and improve its density of states around Ef, moderating free energy of intermediates, thereby the improved formate production performance can be seen.

Solar energy powered electrochemical reduction of CO2 on In2O3 nanosheets with high energy conversion efficiency at a large current density.

Electrochemical CO2 reduction (ECO2R) to value-added chemicals offers a promising approach to both mitigate CO2 emission and facilitate renewable energy conversion. We demonstrate a solar energy powered ECO2R system operating at a relatively large current density (57 mA cm-2) using In2O3 nanosheets (NSs) as the cathode and a commercial perovskite solar cell as the electricity generator, which achieves the high solar to formate energy conversion efficiency of 6.6 %. The significantly enhanced operative current density with a fair solar energy conversion efficiency on In2O3 NSs can be ascribed to their high activity and selectivity for formate production, as well as the fast kinetics for ECO2R. The Faradic efficiencies (FEs) of formate In2O3 NSs are all above 93 %, with the partial current density of formate ranging from 2.3 to 342 mA cm-2 in a gas diffusion flow cell, which is among the widest for formate production on In-based catalysts. In-situ Raman spectroscopy and density functional theory simulations reveal that the exceptional performances of formate production on In2O3 NSs originates from the presence of abundant low coordinated edge sites, which effectively promote the selective adsorption of *OCHO while inhibiting *H adsorption.

Preparation and Photocatalytic Performance of In2O3/Bi2WO6 Type II Heterojunction Composite Materials.

Bismuth-based photocatalytic materials have been widely used in the field of photocatalysis in recent years due to their unique layered structure. However, single bismuth-based photocatalytic materials are greatly limited in their photocatalytic performance due to their poor response to visible light and easy recombination of photogenerated charges. At present, constructing semiconductor heterojunctions is an effective modification method that improves quantum efficiency by promoting the separation of photogenerated electrons and holes. In this study, the successful preparation of an In2O3/Bi2WO6 (In2O3/BWO) II-type semiconductor heterojunction composite material was achieved. XRD characterization was performed to conduct a phase analysis of the samples, SEM and TEM characterization for a morphology analysis of the samples, and DRS and XPS testing for optical property and elemental valence state analyses of the samples. In the II-type semiconductor junction system, photogenerated electrons (e-) on the In2O3 conduction band (CB) migrate to the BWO CB, while holes (h+) on the BWO valence band (VB) transfer to the In2O3 VB, promoting the separation of photoinduced charges, raising the quantum efficiency. When the molar ratio of In2O3/BWO is 2:6, the photocatalytic degradation degree of rhodamine B (RhB) is 59.4% (44.0% for BWO) after 60 min illumination, showing the best photocatalytic activity. After four cycles, the degradation degree of the sample was 54.3%, which is 91.4% of that of the first photocatalytic degradation experiment, indicating that the sample has good reusability. The XRD results of 2:6 In2O3/BWO before and after the cyclic experiments show that the positions and intensities of its diffraction peaks did not change significantly, indicating excellent structural stability. The active species experiment results imply that h+ is the primary species. Additionally, this study proposes a mechanism for the separation, migration, and photocatalysis of photoinduced charges in II-type semiconductor junctions.

ZnO@In2O3 Core-Shell Heterojunctions Constructed With ZIF-8 and MIL-68 (In) for Improving Photogenerated Carrier Transfer Process.

The realization of fast carrier transport can effectively enhance photocatalytic performance. A core-shell structure of ZnO and In2O3 is successfully constructed by using MIL-68 (In) and ZIF-8 as a substrate, forming a heterojunction. This MOF-derived core-shell heterojunction inherits the advantages of ZIF-8, with pores facilitating carriers transfer to the surface for reactions and a large specific surface area providing more active sites. This Z-scheme heterojunction of ZnO and In2O3 can effectively separate and improve the utilization of photogenerated carriers. The well-designed interface of the core-shell structure achieves the rapid transfer of photogenerated carriers. The photocatalytic degradation capability of ZnO@ In2O3 is enhanced by the synergistic effect of Z-scheme heterojunction and core-shell structure. This work provides insight into the investigation of constructing core-shell heterojunctions.

Construction of a In2O3/ultrathin g-C3N4 S-scheme heterojunction for sensitive photoelectrochemical aptasensing of diazinon.

A single semiconductor-based photoelectrochemical (PEC) aptasensor usually faces a challenge of low sensitivity due to poor solar energy utilization and a high photogenerated carrier recombination rate. Herein, an ultra-thin carbon nitride nanosheet-coated In2O3 (In2O3/CNS) S-type heterojunction-based PEC aptasensor has been established to achieve highly sensitive detection of diazinon (DZN) pesticide in water environment. Construction of S-type heterojunction induces a band shift and an electric field effect, enhancing light utilization and accelerating directional transmission of carriers, leading to outstanding PEC performance. The creation of internal electric field at interface ensures stable carrier transport. Additionally, ultrathin CNS structure can effectively shorten the transport path of carriers. The close coating of In2O3 and CNS promotes the transfer of charge. The synergistic effects amplify the sensor's response, ultimately enabling the effective detection of DZN residue over a wide detection range (0.98 âˆ¼ 980.0 pg mL-1), a low detection limit (0.33 pg mL-1, S/N = 3) and excellent accuracy in practical application (RSD < 5 %). This work provides a reference for the construction of a new S-type heterojunction-based PEC sensor.

Key Sputtering Parameters for Precursor In2O3 Films to Achieve High Carrier Mobility.

Owing to their extremely high carrier mobility (µ) of >100 cm2/(V s) and suitable low carrier concentrations, transparent conducting films of solid-phase crystallized H-doped In2O3 (spc-IO:H) exhibit high conductivity with high optical transparency over a broad frequency range. These properties can be attributed to solid-phase crystallization of the amorphous precursor film. Therefore, the development of high-quality spc-IO:H films requires the deposition conditions of the precursor films to be optimized. This study systematically investigates the effects of three key sputtering parameters, namely, water vapor partial pressure (PH2O), radio frequency magnetron sputtering power (PRF), and flow ratio of O2 to total sputter gas (fO2) on the crystallographic texture evolution of spc-IO:H films during solid-phase crystallization. In addition, the carrier transport in the resulting films is examined. PH2O, PRF, and fO2 are found to be indispensable for producing high-mobility (>100 cm2/(V s)) spc-IO:H films. Furthermore, it is found that introducing a small amount of PH2O during deposition, a lower PRF, and a suitable fO2 facilitates the formation of precursor films having a lower crystallite density. Moreover, after annealing at a temperature of 200 °C, the IO:H precursor films with a lower crystallite density are found to have larger crystal grains. However, the µ values of the postannealed IO:H films are mainly correlated with the stoichiometric deviation.

Saturation Mobility of 100 cm2 V-1 s-1 in ZnO Thin-Film Transistors through Quantum Confinement by a Nanoscale In2O3 Interlayer Using Spray Pyrolysis.

In this study, we present a comprehensive study on the fabrication and characterization of heterojunction In2O3/ZnO thin-film transistors (TFTs) aimed at exploiting the quantum confinement effect to enhance device performance. By systematically optimizing the thickness of the crystalline In2O3 (c-In2O3) layer to create a narrow quantum well, we observed a significant increase in saturation mobility (µSAT) from 12.76 to 97.37 cm2 V-1 s-1. This enhancement, attributed to quantum confinement, was achieved through the deposition of a 3 nm c-In2O3 semiconductor via spray pyrolysis. Various In2O3 layer thicknesses (2-5 nm) were obtained by adjusting precursor solution concentration, flow rate, and number of spray cycles. Post annealing treatments were employed to reduce the defects at the interface and within the oxide film, enhancing device stability and performance. Transmission electron microscopy (TEM) confirmed the uniformity of the c-In2O3 film thickness, while variations in thickness significantly influenced TFT performance, particularly the turn-on voltage (VGS) due to changes in the carrier concentration. Ultraviolet photoelectron spectroscopy (UPS) and X-ray photoelectron spectroscopy (XPS) supported the formation of a potential well with a two-dimensional electron gas (2DEG). The study of single and multiple superlattice structures of consecutive c-In2O3 and c-ZnO layers provided insights into the effects of multiple quantum wells on the TFT performance. This research presents an advanced approach to TFT optimization, highlighting high reliability, and environmental and bias stabilities. These lead to enhanced mobility and performance uniformity through the precise control of c-In2O3 layer thickness for the quantum confinement effect.

Composition analysis of ß-(In x Ga1-x )2O3 thin films coherently grown on (010) ß-Ga2O3 via mist CVD.

This study investigates the compositional analysis and growth of ß-(In x Ga1-x )2O3 thin films on (010) ß-Ga2O3 substrates using mist chemical vapor deposition (CVD), including the effects of the growth temperature. We investigated the correlation between In composition and b-axis length in coherently grown films, vital for developing high-electron-mobility transistors and other devices based on ß-(In x Ga1-x )2O3. Analytical techniques, including X-ray diffraction (XRD), reciprocal space mapping, and atomic force microscopy, were employed to evaluate crystal structure, strain relaxation, and surface morphology. The study identified a linear relationship between In composition and b-axis length in coherently grown films, facilitating accurate composition determination from XRD peak positions. The films demonstrated high surface flatness with root-mean-square roughness below 0.6 nm, though minor relaxation and granular features emerged at higher In compositions (x = 0.083) at the growth temperature of 750°C. XRD results revealed that lattice relaxation were observed at a growth temperature of 700°C despite low In composition. In contrast, at 800°C, the In composition was higher than at 750°C, and coherent growth was achieved. The surface morphology was the flattest at 750°C. These findings indicate that the growth temperature plays a crucial role in the mist CVD growth of ß-(In x Ga1-x )2O3 thin films. This study offers insights into the relationship between In composition and lattice parameters in coherently grown ß-(In x Ga1-x )2O3 films, as well as the effect of growth conditions, contributing to the advancement of ultra-wide bandgap semiconductor device development.

This paper presents innovative growth techniques for ß-(InxGa1-x)2O3 thin films, enabling precise In composition control and enhancing potential applications in next-generation power-switching devices.

n-n type In2O3@-WO3 heterojunction nanowires: enhanced NO2 gas sensing characteristics for environmental monitoring.

Solvothermal synthesis of 1D n-In2O3@n-WO3 heterojunction nanowires (HNWs) and their NO2 gas sensing characteristics are reported. The n-In2O3@n-WO3 HNWs have been well-characterised using XRD, Raman spectroscopy, XPS, SEM and HRTEM analyses. The NO2 sensing performance of n-In2O3@n-WO3 HNWs showed superior performance compared with pristine WO3 NWs. Due to the distinctive configuration of WO3-In2O3 heterojunctions, the n-In2O3@n-WO3 HNWs demonstrated remarkable sensitivity reaching 182% in response towards 500 ppb of NO2 gas at operating temperature of 200°C which is nearly 3.5 times greater than the response observed with pristine WO3 (50%). Moreover, the n-In2O3@n-WO3 HNWs also exhibited fast response (8-13 s)/recovery (54-62 s) time characteristics. A plausible sensing mechanism has been discussed. The enhancement in sensor characteristics shows that n-In2O3@n-WO3 HNWs could serve as a promising material for high-performance NO2 gas sensors for real-time environmental monitoring applications. This work could provide new understandings of the sensing mechanism of n-In2O3@n-WO3-based heterojunction nanowires, which can be applied to the design of novel n-n type MOS heterojunction materials for the application of low-temperature real-time high-performance NO2 sensors.

Bimetallic Au/Ag coated on In2O3 for the effective removal of emerging organic contaminants under natural sunlight irradiation.

Antibiotics-polluted wastewater, likely causing the spread of antibiotic-resistant bacteria (ARB) and antibiotic resistance genes (ARGs), can be effectively remediated by photocatalytic degradation driven by endless solar energy. Herein, bimetallic Au/Ag is deposited on In2O3 surface via a one-step sintering process followed by a controllable chemical reduction approach. Under natural sunlight irradiation, the optimal Au/Ag/In2O3 (UGI-1.0) photocatalyst possesses a considerable norfloxacin (NOR) degradation rate constant of 0.013 min-1, which is 3.25, 1.63, and 1.86 times higher than that of In2O3, Ag/In2O3, and Au/In2O3 respectively. The effect of many water characteristics (e.g., humic acid, water bodies, pH values, and coexisting anions) on the photodegradation performance of NOR over UGI-1.0 is investigated. Moreover, other persistent organic pollutants (ofloxacin, phenol, 2,4-dichlorophenol, and rhodamine B) can also be degraded over UGI-1.0, suggesting its universal oxidation capacity. To settle the challenge of powder photocatalyst recovery, the UGI-1.0 photocatalyst is coated on a frosted glass sheet, which exhibits outstanding activity and stability for degrading NOR. The bimetallic Au/Ag deposited on In2O3 promote its photo-absorption, and enhance its photoinduced charge separation and transfer efficiency by serving as electron accepter, leading to the boosted activity of Au/Ag/In2O3 catalysts. Particularly, the cultivation of staphylococcus aureus (S. aureus) and cabbage seeds reveals the efficient toxicity reduction of NOR by photocatalytic degradation and the nontoxic characteristic of UGI-1.0 catalyst. This work unveils the feasibility of UGI-1.0 to remediate real wastewater with the assistance of solar energy.

Gas Sensing Properties of Indium-Oxide-Based Field-Effect Transistor: A Review.

Excellent stability, low cost, high response, and sensitivity of indium oxide (In2O3), a metal oxide semiconductor, have been verified in the field of gas sensing. Conventional In2O3 gas sensors employ simple and easy-to-manufacture resistive components as transducers. However, the swift advancement of the Internet of Things has raised higher requirements for gas sensors based on metal oxides, primarily including lowering operating temperatures, improving selectivity, and realizing integrability. In response to these three main concerns, field-effect transistor (FET) gas sensors have garnered growing interest over the past decade. When compared with other metal oxide semiconductors, In2O3 exhibits greater carrier concentration and mobility. The property is advantageous for manufacturing FETs with exceptional electrical performance, provided that the off-state current is controlled at a sufficiently low level. This review presents the significant progress made in In2O3 FET gas sensors during the last ten years, covering typical device designs, gas sensing performance indicators, optimization techniques, and strategies for the future development based on In2O3 FET gas sensors.

Prototype Alarm Integrating Pulse-Driven Nitrogen Dioxide Sensor Based on Holey Graphene Oxide/In2O3.

NO2 seriously threatens human health and the ecological environment. However, the fabrication of highly sensitive NO2 sensors with rapid response/recovery rates, low detection limits, and ease of integration remains a challenge. Herein, benefiting from the fast carrier transfer and rich active sites, holey graphene oxide (HGO) was adopted to functionalize the In2O3 nanosheet to construct NO2 gas sensors. Characterization and theoretical calculations established the merits of HGO decoration in the NO2 sensing. The optimal sample, 0.5 wt % HGO/In2O3-sheet, exhibited superior sensing properties, resulting in a 1.37-fold improvement in response to 1 ppm of NO2 compared to the GO/In2O3 counterpart. Gas-sensing kinetics analysis revealed its lower activation energy and higher kinetic rate constants. Importantly, pulsed-temperature modulation was employed to decouple the gas adsorption from surface activation processes, achieving an ultrahigh response of 2776 to 1 ppm of NO2 for the 0.5 wt % HGO/In2O3-sheet sensor. Compared to the isothermal mode, this strategy enhanced the response value by 1.6 times, reduced the response/recovery time by 33%/70%, and enabled the detection of NO2 concentrations as low as 1 ppb. Finally, an NO2 monitoring alarm system based on the 0.5 wt % HGO/In2O3-sheet sensor with pulsed-temperature modulation was demonstrated for hazard warnings.

Ionic liquid-assisted synthesis of In2O3 nanoparticles for ppb-level NO2 sensing at low temperature.

Highly sensitive detection of nitric dioxide (NO2) has recently attracted much attention due to its harmful to the human health even at a low concentration of 0.1 parts per million (ppm). Herein, In2O3 nanoparticles (NPs) were prepared via a facile ionic liquid (IL) assisted solvothermal method with subsequent calcination and then were analyzed through the characterization of X-ray diffractometer (XRD), scanning electron microscope (SEM), transmission electron microscope (TEM), X-ray photoelectron spectroscopy (XPS) and nitrogen adsorption-desorption techniques. Morphological characterization demonstrated that the resultant compounds were In2O3 NPs with a diameter ranging from 20 to 30 nm. The gas sensor based on the In2O3 NPs prepared with IL exhibited excellent NO2-sensing properties in terms of fast response/recovery speed (26.6/10.0 s), high response (310.0), good repeatability and long-term stability to 10 ppm NO2 gas at low working temperature of 92 °C. The gas-sensing mechanism of In2O3 NPs to NO2 was represented to the surface adsorption control model and the possibilities relating to the improved NO2 sensing performance of the In2O3 NPs synthesized with IL-assisted were also discussed in detail.

Multicoated Flexible Indium Tin Oxide Electrodes Fabricated Using Magnetron Sputtering and Arc Plasma Ion Plating for Flexible Perovskite Solar Cells.

High-performance flexible Sn-doped In2O3 (indium tin oxide, ITO) electrodes were fabricated using a multicoating process on colorless polyimide (CPI) substrates for flexible perovskite solar cells (FPSCs). The effects of different coating sequences on the electrical, optical, and mechanical properties of the flexible ITO electrodes were thoroughly investigated after preparing them with direct-current magnetron sputtering (DMS) and arc plasma ion plating (APIP). Although both the sputtered ITO (SITO)/arc ion-plated ITO (AITO) film and the AITO/SITO film showed similarly low sheet resistance (18.69-25.29 Ω/sq) and high optical transmittance (94.96-96.85%), the coating sequence significantly affected the mechanical flexibility of the multicoated ITO films. The 120 nm-thick SITO/AITO electrode exhibited small outer and inner critical bending radii (3 mm and 3 mm, respectively) compared to the AITO/SITO electrode (4 and 5 mm, respectively). Owing to better adhesion of the arc-ion-plated ITO bottom layer and the amorphous structure of the top SITO layer, the SITO/AITO electrode exhibited excellent mechanical flexibility and durability. In addition, an FPSC using the SITO/AITO electrode achieved a higher power conversion efficiency (15.09%) than that with the AITO/SITO electrode (13.22%). This improvement was attributed to its high transmittance, low sheet resistance, smooth surface morphology, and enhanced hole collection efficiency. These findings highlight the efficacy of the combined DMS and APIP multicoating process for fabricating high-quality flexible ITO electrodes for high-performance FPSCs.

Enhanced NO2 Gas Sensing Properties Based on Rb-Doped ZnO/In2O3 Heterojunctions at Room Temperature: A Combined DFT and Experimental Study.

In this work, alkali metal Rb-loaded ZnO/In2O3 heterojunctions were synthesized using a combination of hydrothermal and impregnation methods. The morphology and structure of the synthesized samples were characterized by X-ray diffraction, field emission scanning electron microscopy, and transmission electron microscopy. The enhancement mechanism of the nitrogen dioxide gas sensing performance of the Rb-loaded ZnO/In2O3 heterojunctions was systematically investigated at room temperature using density-functional theory calculations and experimental validation. The experimental tests showed that the Rb-loaded ZnO/In2O3 sensor achieved an excellent response value of 24.2 for 1 ppm NO2, with response and recovery times of 55 and 21 s, respectively. This result is 20 times higher than that of pure ZnO sensors and two times higher than that of ZnO/In2O3 sensors, indicating that the Rb-loaded ZnO/In2O3 sensor has a more pronounced enhancement in performance for NO2. This study not only revealed the mechanism by which Rb loading affects the electronic structure and gas molecule adsorption behavior on the surface of ZnO/In2O3 heterojunctions but also provides theoretical guidance and technical support for the development of high-performance room-temperature NO2 sensors.

MIL-Derived Hollow Tubulous-Shaped In2O3/ZnIn2S4 Z-Scheme Heterojunction for Efficient Antibacterial Performance via In Situ Composite.

In this study, a hollow tubulous-shaped In2O3 derived from MIL (MIL-68 (In)) exhibited an enhanced specific surface area compared to MIL. To further sensitize In2O3, ZnIn2S4 was grown in situ on the derived In2O3. The 40In2O3/ZnIn2S4 composite (1 mmol ZnIn2S4 loaded on 40 mg In2O3) exhibited degradation rates of methyl orange (MO) under visible light (80 mW·cm-2, 150 min) that were 17.9 and 1.4 times higher than those of the pure In2O3 and ZnIn2S4, respectively. Moreover, the 40In2O3/ZnIn2S4 exhibited an obviously improved antibacterial performance against Pseudomonas aeruginosa, with an antibacterial rate of 99.8% after visible light irradiation of 80 mW cm-2 for 420 min. The 40In2O3/ZnIn2S4 composite showed the highest photocurrent density, indicating an enhanced separation of photogenerated charge carriers. Electron spin resonance results indicated that the 40In2O3/ZnIn2S4 composite generated both ·O2- and ·OH radicals under visible light, whereas ·OH radicals were almost not detected in ZnIn2S4 alone, suggesting the presence of a Z-scheme heterojunction between In2O3 and ZnIn2S4, thereby enhancing the degradation and antibacterial capabilities of the composite. This offers fresh perspectives on designing effective photocatalytic materials for use in antibacterial and antifouling applications.

Visible Light-Activated Room Temperature NO2 Gas Sensing Based on the In2O3@ZnO Heterostructure with a Hollow Microtube Structure.

The persistent challenge of poor recovery characteristics of NO2 sensors operated at room temperature remains significant. However, the development of In2O3-based gas sensing materials provides a promising approach to accelerate response and recovery for sub-ppm of NO2 detection at room temperature. Herein, we propose a simple two-step method to synthesize a one-dimensional (1D) In2O3@ZnO heterostructure material with hollow microtubes, by coupling metal-organic frameworks (MOFs) (MIL-68 (In)) and zinc ions. Meanwhile, the In2O3@ZnO composite-based gas sensor exhibits superior sensitivity performance to NO2 under visible light activation. The response value to 5 ppm of NO2 at room temperature is as high as 1800, which is 35 times higher than that of the pure In2O3-based sensor. Additionally, the gas sensor based on the In2O3@ZnO heterostructure demonstrates a significantly reduced response/recovery time of 30 s/67 s compared to the sensor based on pure In2O3 (74 s/235 s). The outstanding gas sensing properties of the In2O3@ZnO heterostructure-based sensors can be attributed to the enhanced photogenerated charge separation efficiency resulting from the heterostructure effect, and the improved receptor function toward NO2, which can increase the reactive sites and gas adsorption capacity. In summary, this work proposes a low-cost and efficient method to synthesize a 1D heterostructure material with microtube structures, which can serve as a fundamental technique for developing high-performance room-temperature gas sensors.

Metal-Organic Framework-Derived Au-Doped In2O3 Nanotubes for Monitoring CO at the ppb Level.

Achieving selective detection of ppb-level CO is important for air quality testing at industrial sites to ensure personal safety. Noble metal doping enhances charge transfer, which in turn reduces the detection limit of metal oxide gas sensors. In this work, metal-organic framework-derived Au-doped In2O3 nanotubes with high electrical conductivity are synthesized by pyrolysis of the Au-doped metal-organic framework (In-MIL-68) as a template. Gas-sensing experiments reveal that the detection limit of 0.2% Au-doped In2O3 nanotubes (0.2% Au, mass fraction) is as low as 750 ppb. Meanwhile, the sensing material shows a response value of 18.2 to 50 ppm of CO at 240 °C, which is about 2.8 times higher than that of pure In2O3. Meanwhile, the response and recovery times are short (37 s/86 s). The gas-sensing mechanism of CO is uncovered by in situ DRIFTS through the reaction intermediates. In addition, first-principles calculations suggest that Au doping of In2O3 significantly enhances its adsorption energy for CO and improves the electron transfer properties. This study reveals a novel synthesis pathway for Au-doped In2O3 nanotubular structures and their potential application in low concentration CO detection.

Ultrathin In2O3thin-film transistors deposited from trimethylindium and ozone.

Indium oxide (In2O3) is a promising channel material for thin-film transistors (TFTs). In this work, we develop an atomic layer deposition (ALD) process of using trimethylindium and ozone (O3) to deposit In2O3films and fabricate ultrathin In2O3TFTs. The In2O3TFTs with 4 nm channel thickness show generally good switching characteristics with a highIon/Ioffof 108, a high mobility (µFE) of 16.2cm2V-1s-1and a positive threshold voltage (Vth) of 0.48 V. Although the 4 nm In2O3TFTs exhibit short channel effect, it can be improved by adding an ALD Ga2O3capping layer to afford the bilayer In2O3/Ga2O3channel structure. The afforded In2O3/Ga2O3TFTs exhibit improved immunity to the short channel effect, with good TFT characteristics ofIon/Ioffof 107,µFEof 9.3cm2V-1s-1, and positiveVthof 2.23 V. Overall, the thermal budget of the entire process is only 400 °C, which is suitable for the display and CMOS back-end-of-line-compatible applications.

Effects of Laser Treatment of Terbium-Doped Indium Oxide Thin Films and Transistors.

In this study, a KrF excimer laser with a high-absorption coefficient in metal oxide films and a wavelength of 248 nm was selected for the post-processing of a film and metal oxide thin film transistor (MOTFT). Due to the poor negative bias illumination stress (NBIS) stability of indium gallium zinc oxide thin film transistor (IGZO-TFT) devices, terbium-doped Tb:In2O3 material was selected as the target of this study. The XPS test revealed the presence of both Tb3+ and Tb4+ ions in the Tb:In2O3 film. It was hypothesized that the peak of the laser thermal effect was reduced and the action time was prolonged by the f-f jump of Tb3+ ions and the C-T jump of Tb4+ ions during the laser treatment. Studies related to the treatment of Tb:In2O3 films with different laser energy densities have been carried out. It is shown that as the laser energy density increases, the film density increases, the thickness decreases, the carrier concentration increases, and the optical band gap widens. Terbium has a low electronegativity (1.1 eV) and a high Tb-O dissociation energy (707 kJ/mol), which brings about a large lattice distortion. The Tb:In2O3 films did not show significant crystallization even under laser energy density treatment of up to 250 mJ/cm2. Compared with pure In2O3-TFT, the doping of Tb ions effectively reduces the off-state current (1.16 × 10-11 A vs. 1.66 × 10-12 A), improves the switching current ratio (1.63 × 106 vs. 1.34 × 107) and improves the NBIS stability (ΔVON = -10.4 V vs. 6.4 V) and positive bias illumination stress (PBIS) stability (ΔVON = 8 V vs. 1.6 V).