Femtosecond Laser Ablation and Delamination of Functional Magnetic Multilayers at the Nanoscale.

Laser nanostructuring of thin films with ultrashort laser pulses is widely used for nanofabrication across various fields. A crucial parameter for optimizing and understanding the processes underlying laser processing is the absorbed laser fluence, which is essential for all damage phenomena such as melting, ablation, spallation, and delamination. While threshold fluences have been extensively studied for single compound thin films, advancements in ultrafast acoustics, magneto-acoustics, and acousto-magneto-plasmonics necessitate understanding the laser nanofabrication processes for functional multilayer films. In this work, we investigated the thickness dependence of ablation and delamination thresholds in Ni/Au bilayers by varying the thickness of the Ni layer. The results were compared with experimental data on Ni thin films. Additionally, we performed femtosecond time-resolved pump-probe measurements of transient reflectivity in Ni to determine the heat penetration depth and evaluate the melting threshold. Delamination thresholds for Ni films were found to exceed the surface melting threshold suggesting the thermal mechanism in a liquid phase. Damage thresholds for Ni/Au bilayers were found to be significantly lower than those for Ni and fingerprint the non-thermal mechanism without Ni melting, which we attribute to the much weaker mechanical adhesion at the Au/glass interface. This finding suggests the potential of femtosecond laser delamination for nondestructive, energy-efficient nanostructuring, enabling the creation of high-quality acoustic resonators and other functional nanostructures for applications in nanosciences.

Thickness Effect on the Solid-State Reaction of a Ni/GaAs System.

Ni thin films with different thicknesses were grown on a GaAs substrate using the magnetron sputtering technique followed by in situ X-ray diffraction (XRD) annealing in order to study the solid-state reaction between Ni and GaAs substrate. The thickness dependence on the formation of the intermetallic phases was investigated using in situ and ex situ XRD, pole figures, and atom probe tomography (APT). The results indicate that the 20 nm-thick Ni film exhibits an epitaxial relation with the GaAs substrate, which is (001) Ni//(001) GaAs and [111] Ni//[110] GaAs after deposition. Increasing the film's thickness results in a change of the Ni film's texture. This difference has an impact on the formation temperature of Ni3GaAs. This temperature decreases simultaneously with the thickness increase. This is due to the coherent/incoherent nature of the initial Ni/GaAs interface. The Ni3GaAs phase decomposes into the binary and ternary compounds xNiAs and Ni3-xGaAs1-x at about 400 °C. Similarly to Ni3GaAs, the decomposition temperature of the second phase also depends on the initial thickness of the Ni layer.