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1.
Small ; 20(32): e2400449, 2024 Aug.
Artículo en Inglés | MEDLINE | ID: mdl-38488742

RESUMEN

Materials with low intrinsic lattice thermal conductivity are crucial in the pursuit of high-performance thermoelectric (TE) materials. Here, the TE properties of PbBi2Te4-xSex (0 ≤ x ≤ 0.6) samples are systematically investigated for the first time. Doping with Se in PbBi2Te4 can simultaneously reduce carrier concentration and increase carrier mobility. The Seebeck coefficient is significantly increased by doping with Se, based on the density functional theory calculation, it is shown to be due to the increased bandgap and electronic density of states. In addition, the lattice strain is enhanced due to the difference in the size of Se and Te atoms, and the multidimensional defects formed by Se doping, such as vacancies, dislocations, and grain boundaries, enhance the phonon scattering and reduce the lattice thermal conductivity by about 37%. Finally, by using Se doping to reduce carrier concentration and thermal conductivity, a large ZTmax = 0.56 (at 574K) is achieved for PbBi2Te3.5Se0.5, which is around 64% larger than those of the PbBi2Te4 pristine sample. This work not only demonstrates that PbBi2Te4 is a potential medium temperature thermoelectric material, but also provides a reference for enhancing thermoelectric properties through defect and energy band engineering.

2.
Materials (Basel) ; 15(7)2022 Apr 01.
Artículo en Inglés | MEDLINE | ID: mdl-35407946

RESUMEN

Recently, high-entropy alloys (HEAs) and HEA-type compounds have been extensively studied in the fields of material science and engineering. In this article, we report on the synthesis of a layered system MBi2Te4 where the M site possesses low-, middle-, and high-entropy states. The samples with M = Pb, Ag1/3Pb1/3Bi1/3, and Ag1/5In1/5Sn1/5Pb1/5Bi1/5 were newly synthesized and the crystal structure was examined by synchrotron X-ray diffraction and Rietveld refinement. We found that the M-Te2 distance was systematically compressed with decreasing lattice constants, where the configurational entropy of mixing at the M site is also systematically increased. The details of structural refinements and the electrical transport property are presented.

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