Doped-Sn Enhanced the Performance of BiOCl Nanosheet on Electrocatalytic Synthesis of Hydrogen Peroxide.

The hydrogen peroxide (H2O2) produced through electrochemical two-electron oxygen reduction reaction (2e- ORR) is a promising green synthesis method and served as potential strategy to replace the energy-intensive anthraquinone process. Nevertheless, the design of low-cost and efficient electrocatalysts for 2e- ORR remains a formidable challenge. In this study, Sn-BiOCl nanosheets electrocatalysts are prepared for expediting the 2e- ORR, achieving a high H2O2 selectivity of 92.9%, and the H2O2 yield of 10628 mg L-1 h-1 (0.1 mg cm-2) in a flow-cell device. The in situ ATR-SEIRAS results reveal that Sn-BiOCl enhances the adsorption and activation of *OOH compared to BiOCl, resulting in higher activity and selectivity for 2e- ORR. Furthermore, this study investigates the potential for on-site production and application of H2O2 using Sn-BiOCl, which displays a 95% degradation removal of dyes (RhB, MB, and MO) within 20 min. This work not only have an insight into the critical roles of Bi and Sn atoms in enhancing the catalytic performance but also provides a thought to design efficient catalysts for production H2O2 via electrochemical 2e- ORR.

Enhanced Photoelectrochemical Water Splitting Using NiMoO4/BiVO4/Sn-Doped WO3 Double Heterojunction Photoanodes.

Efficient photoelectrochemical (PEC) water splitting systems in photoelectrodes are primarily challenged by electron-hole pair recombination. Constructing a heterostructure is an effective strategy to overcome this issue and to enhance PEC efficiency. In this study, we integrated NiMoO4, known for its proper electrocatalytic conductivity, into a BiVO4/Sn-doped WO3 heterojunction using solution-based hydrothermal and spin-coating methods, forming an innovative double heterojunction concept. The resulting NiMoO4/BiVO4/Sn:WO3 triple-layer heterojunction photoanode exhibits a photocurrent density of 2.06 mA cm-2 in a potassium borate buffer (KBi) electrolyte at 1.23 V vs RHE, outperforming the bilayer BiVO4/Sn:WO3 heterojunction (1.45 mA cm-2) and Sn:WO3 photoanodes (0.55 mA cm-2) by approximately 1.4 and 3.7 times, respectively. Remarkably, the NiMoO4/BiVO4/Sn:WO3 double heterojunction photoanode exhibits notable stability, showing only an approximate 30% reduction in initial photocurrent density after 10 h of measurement in the KBi electrolyte without a hole scavenger. This stability is attributed to the excellent corrosion resistance of the thin NiMoO4 layer, effectively protecting the bilayer BiVO4/Sn:WO3 heterojunction photoanode from photocorrosion. Our findings show how this novel double heterojunction, established through simple and cost-effective solution-based methods, offers a promising approach to enhancing PEC water splitting applications.

Multicoated Flexible Indium Tin Oxide Electrodes Fabricated Using Magnetron Sputtering and Arc Plasma Ion Plating for Flexible Perovskite Solar Cells.

High-performance flexible Sn-doped In2O3 (indium tin oxide, ITO) electrodes were fabricated using a multicoating process on colorless polyimide (CPI) substrates for flexible perovskite solar cells (FPSCs). The effects of different coating sequences on the electrical, optical, and mechanical properties of the flexible ITO electrodes were thoroughly investigated after preparing them with direct-current magnetron sputtering (DMS) and arc plasma ion plating (APIP). Although both the sputtered ITO (SITO)/arc ion-plated ITO (AITO) film and the AITO/SITO film showed similarly low sheet resistance (18.69-25.29 Ω/sq) and high optical transmittance (94.96-96.85%), the coating sequence significantly affected the mechanical flexibility of the multicoated ITO films. The 120 nm-thick SITO/AITO electrode exhibited small outer and inner critical bending radii (3 mm and 3 mm, respectively) compared to the AITO/SITO electrode (4 and 5 mm, respectively). Owing to better adhesion of the arc-ion-plated ITO bottom layer and the amorphous structure of the top SITO layer, the SITO/AITO electrode exhibited excellent mechanical flexibility and durability. In addition, an FPSC using the SITO/AITO electrode achieved a higher power conversion efficiency (15.09%) than that with the AITO/SITO electrode (13.22%). This improvement was attributed to its high transmittance, low sheet resistance, smooth surface morphology, and enhanced hole collection efficiency. These findings highlight the efficacy of the combined DMS and APIP multicoating process for fabricating high-quality flexible ITO electrodes for high-performance FPSCs.

Upheaval of Negative Dielectric Permittivity and Semiconductor to Metallic Transition in a Thermally Induced Sn-Doped ß-Ga2O3 (-201) Single Crystal.

Thermally induced dielectric and conductivity properties of an Sn-doped ß-Ga2O3 (-201) single crystal were investigated by frequency-domain impedance spectroscopy in the frequency window from 100 Hz to 1 MHz with temperatures between 293 and 873 K. The (-201) plane-orientated single crystalline nature and the presence of an Sn dopant in ß-Ga2O3 were confirmed by X-ray diffraction (XRD) and X-ray photoelectron (XPS) spectroscopy. Two different trends of impedance spectra have been discussed by the modulation of relaxation times and semiconductor to metallic transition after ∼723 K due to activation of a significant number of Sn dopants and their movements with temperature. The negative impedance values were encountered in the Nyquist plots (Z' vs Z″) after 573 K and constitute a reverse movement after 723 K with temperature. The average normalized change (ΔZ'/Δf)/Z0 of impedance exhibits a broad downward relaxation plateau near 723 K, indicating a weak electrical transition. The increases in the positive value of the dielectric constant (εr') below a percolating threshold temperature 573 K is attributed to the interfacial and dipolar polarizations, and the plasma oscillation of delocalized electrons governed by the Drude theory is responsible for the negative dielectric constant above 573 K. The 3D projections of the real dielectric constant create a sharp downward sinkhole near 723 K, indicating the existence of negative dielectric permittivity. The electrical conductivity dramatically changes its trends after 523 K and confirms a transition from hopping conduction (dielectric or semiconductor) following Jonscher's power law to metallic conduction by Drude theory. Below the percolating threshold temperature, a nonoverlapping small polaron tunneling conduction mechanism was unveiled with defect-induced activation energy of 0.21 eV. The Sn-doped ß-Ga2O3 exhibits unique and tailored electromagnetic responses with temperatures that can be associated with a variety of applications in electromagnetic wave manipulations, cloaking devices, antennas, sensors, medical imaging, seismic wave propagation, etc.

Preparation of Sn-Doped Ga2O3 Thin Films and MSM Ultraviolet Detectors Using Magnetron Co-Sputtering.

Sn-doped Ga2O3 thin films and metal-semiconductor-metal (MSM) ultraviolet detectors were prepared using the co-sputtering method to enhance their photoelectric performance. The results revealed that Sn doping can effectively change the optical and electrical properties of thin films, greatly improving the photoelectric responsiveness of the devices. Through microstructure testing results, all of the thin film structures were determined to be monoclinic beta phase gallium oxide. At a DC power of 30 W, the thickness of the Sn-doped thin film was 430 nm, the surface roughness of the thin film was 4.94 nm, and the carrier concentration, resistivity, and mobility reached 9.72 × 1018 cm-3, 1.60 × 10-4 Ω·cm, and 45.05 cm3/Vs, respectively. The optical results show that Sn doping clearly decreases the transmission of thin films and that the bandgap can decrease to 3.91 eV. Under 30 W DC power, the photo dark current ratio of the detector can reach 101, time responses of tr = 31 s and tf = 22.83 s were obtained, and the spectral responsivity reached 19.25 A/W.

Ultrahigh Bipolar Photoresponse in a Self-Powered Ultraviolet Photodetector Based on GaN and In/Sn-Doped Ga2O3 Nanowires pn junction.

Self-powered ultraviolet photodetectors with bipolar photoresponse have great potential in the fields of ultraviolet optical communication, all-optical controlled artificial synapses, high-resolution ultraviolet imaging equipment, and multiband photoelectric detection. However, the current low optoelectronic performance limits the development of such polar switching devices. Here, we construct a self-powered ultraviolet photodetector based on GaN and In/Sn-doped Ga2O3 (IGTO) nanowires (NWs) pn junction structure. This unique nanowire/thin film structure allows GaN and IGTO to dominate the absorption of light at different wavelengths, resulting in a highly bipolar photoresponse. The device has a responsivity of 2.04 A/W and a normalized detectivity of 7.18 × 1013 Jones at 254 nm and a responsivity of -2.09 A/W and a normalized detectivity of -7 × 1013 Jones at 365 nm, both at zero bias. In addition, it has an extremely high Ilight/Idark ratio of 1.05 × 105 and ultrafast response times of 2.4/1.9 ms (at 254 nm) and 5.7/5.2 ms (at 365 nm). These excellent properties are attributed to the high specific surface area of the one-dimensional nanowire structure and the abundant voids generated by the nanowire network to enhance the absorption of light, and the p-n junction structure enables the rapid separation and transfer of photogenerated electron-hole pairs. Our findings provide a feasible strategy for high-performance wavelength-controlled polarity switching devices.

Sn-Doped Zinc Oxide as an Electron Transporting Layer for Enhanced Performance in PbS Quantum Dot Solar Cells.

Colloidal PbS quantum dot solar cells (QDSCs) have been primarily demonstrated in n-i-p structures by incorporating a solution-processed ZnO electron transporting layer (ETL). Nevertheless, the inherent energy barrier for the electron extraction at the ZnO/PbS junction along with the defective nature significantly diminishes the performance of the PbS QDSCs. In this study, by employing Sn-doped ZnO (ZTO) ETL, we have tuned the conduction band offset at the junction from spike-type to cliff-type so that the electron extraction barrier can be eliminated and the overall photovoltaic parameters can be enhanced (open-circuit voltage of 0.7 V, fill factor over 70%, and efficiency of 11.3%) as compared with the counterpart with the undoped ZnO ETL. The X-ray photoelectron spectroscopy (XPS) analysis revealed a mitigation of oxygen vacancies in the ZTO ETL of our PbS QDSCs. Our work signifies the importance of Sn doping into the conventional ZnO ETL for the superior electron extraction in PbS QDSCs.

Preparation and characterization of pristine and Sn doped copper gallium sulphide (CGS) thin films using spray pyrolysis technique.

With thin film solar cell applications, chalcopyrite semiconductors present enormous potential for usage as an absorber layer. In today's electronics sector, wide band gap semiconductors have extreme demand for applications such as high-power, high-frequency, challenging devices that are resistant to high temperatures, optoelectronic devices, and short-wavelength light-emitting devices. The undoped and tin-doped CGS thin films are the subject of the current investigation. Pure and Tin (Sn) doped CGS thin films were produced on a glass substrate using a low-cost chemical spray pyrolysis technique in a nitrogen atmosphere. Spray pyrolysis is a flexible and efficient method for thin-film deposition. The process parameters, such as the nozzle distance, spray time, spray rate, and temperature, have a significant impact on the films' quality and characteristics. Fundamental characterization techniques, including XRD analysis, Micro Raman analysis, EDAX, UV-VIS-NIR spectroscopy, and Scanning Electron Microscopy (SEM), were used to examine the generated pristine and Sn-doped CGS thin films. The XRD patterns showed that the pristine and Sn-doped CGS thin films exhibit a tetragonal phase and there is a decrease in the crystallite size with increasing dopant concentration. SEM studies revealed that there is a change in the grain size and surface morphology of the film with increasing Sn doping concentration. The presence of copper (Cu), gallium (Ga), sulfur (S), and Sn was further confirmed by studying the EDAX spectrum. SEM results indicate that the surface morphology of the CGS films is modified by Sn doping. Further increasing the dopant percentage caused deformation and fragmentation of the sample. A comparison of the Raman spectra for pristine and Sn-doped CGS revealed that there is some substantial change in the layer composition after adding the dopant. Compared to the pristine CGS, the peak positions of CGS (1 wt %) and CGS (3 wt %) are not shifted but there is a significant change in the relative peak intensities and formation of an additional peak The Sn-doped CuGaS2 thin films had optical band gaps of 2.47 eV (0.0 wt% Sn-doped), 2.33 eV (1 wt% Sn-doped), and 2.58 eV (3 wt% Sn-doped). From this study, we can say that the 1 wt% Sn doped CGS sample is the best for solar cell application. The XRD results indicated that the Sn dopant addition in the CuGaS2 lattice site does not affect the symmetry of the material. Enhancement of absorption is done by the Sn dopant.

Dual effect to improve the electrical properties of SZO films grown by nitrogen pneumatic spray pyrolysis.

The principal aim of this study is to reduce considerably, via Sn doping, the resistivity of ZnO thin films prepared by simple, flexible, and cost-effective nitrogen pneumatic spray pyrolysis (NPSP) method on glass substrates at a temperature of 400°C. Different Sn content was tested (Sn/Zn = 0, 1, 3, 5 wt%) in an attempt to reduce the concentration of excessive oxygen atoms and create more free electrons. The microstructural, optical, morphological, and electrical properties of the films have been studied. The x-ray diffraction analysis demonstrated that tin-doped SZO films exhibited polycrystalline nature with a preferential orientation along (002) plane with the appearance of a new orientation (101) with the increase of Sn concentration leading then to bidirectional growth. The deposited SZO films showed an average optical transmittance of about 80% in the UV-visible region (200-800 nm) with optical band gap values at around 3.27 eV. Photoluminescence emissions of SZO samples presented three main peaks: near band edge emission, violet emission, and the blue-green emission. The surface morphology of the films obtained by scanning electron microscope (SEM) exhibited the change in morphology with increasing the Sn content. A minimum electrical resistivity value of about 17·10-3 Ω·cm was obtained for 3% SZO films. SZO films prepared by the NPSP method can be used as transparent window layer and electrodes in solar cells. RESEARCH HIGHLIGHTS: Highly oriented, conducting, and transparent Sn-doped ZnO films are successfully synthesized. The film growth orientation changed from mono-directional (002) axis to bi-directional (002) and (101) axis according to Sn doping. Ultraviolet and green emissions are noted by photoluminescence investigation. A minimum resistivity is observed for 3 wt% SZO film. The dual positive effect of the carrier gas used (N2) and Sn doping is confirmed.

Sn-doped BiOCl for photoelectrochemical activities and photocatalytic dye degradation under visible light.

In this work, bismuth oxychloride (BiOCl) and Sn-doped BiOCl (SBCl) with improved visible light photocatalytic activity were synthesized via the co-precipitation method. The XRD analysis determined the tetragonal phase of BiOCl, 1 %, 5 %, and 10 % SBCl. The crystallite sizes were in the range of 20-34 nm. These results confirmed that the Sn ion was successfully incorporated into the BiOCl lattice. This was further confirmed by FT-IR and Raman analysis. The optical properties, such as the band gap energy, were studied using UV-vis DRS. It was found that doping BiOCl with Sn has a minor effect on the band gap tuning. BET shows that the SBCl samples have acquired a larger specific surface area (14.66-42.20 m2/g) than BiOCl (13.49 m2/g). The photocatalytic performance showed that SBCl samples have higher photocatalytic activity than BiOCl in degrading Rhodamine B (RhB) dye under visible light irradiation. Among the SBCl samples, 5 % SBCl exhibited the highest photocatalytic efficiency which degraded 91.2 % of the RhB dye in 60 min. Moreover, the photoelectrochemical activities of the as-synthesized BiOCl and SBCl were investigated using linear sweep voltammetry (LSV) and electrochemical impedance spectroscopy (EIS) in the dark and under visible light irradiation. Both studies showed that SBCl exhibits enhanced photoelectrochemical activities than BiOCl. Hence, it can be suggested that SBCl possesses visible light active properties and can be potentially used as a photocatalyst and photoelectrode material.

The role of tin species in doped iron (III) oxide for photocatalytic degradation of methyl orange dye under UV light.

Iron (III) oxide, a stable semiconductor with versatile applications, was synthesized alongside Sn-doped Fe2O3 (Sn-Fe2O3) using the sol-gel technique. Characterization via X-ray diffraction, field-emission scanning electron microscopy, and UV-visible spectroscopy confirmed the presence of α- and γ-Fe2O3 phases in the synthesized powders. Incorporation of the dopant reduced the initial band gap energy of Fe2O3 (2.2 eV) by approximately 0.1 eV. To evaluate photocatalytic performance, Fe2O3 and Sn-Fe2O3 were tested for decolorization efficiency of a methyl orange solution. Results revealed the 5 wt% Sn-doped catalyst as optimal, achieving complete degradation of methyl orange within 120 min under simulated solar light. The addition of small amounts of Sn effectively reduced the Fe2O3 band gap and significantly enhanced photocatalytic performance. Investigation of pH and dye concentration impact on photocatalytic degradation revealed superior activity under acidic conditions compared to alkaline. Furthermore, maintaining a moderate concentration of methyl orange (10 ppm) ensured optimum photocatalytic activity.

High performance sulfur/carbon cathode for Na-S battery enabled by electrocatalytic effect of Sn-doped In2S3.

Room-temperature sodium-sulfur (RT Na-S) batteries have been attracting enormous interests due to their low-cost, high capacity and environmental benignity. However, the shuttle effect and the sluggish electrochemical reaction activity of sodium polysulfides (NaPSs) seriously restrict their practical application. To solve these issues, we rationally designed an advanced Sn-doped In2S3/S/C cathode for RT Na-S batteries by magnetron sputtering in this work, which exhibited a high reversible capacity (1663.5 mAh g-1 at 0.1 A g-1) and excellent cycling performance (902.9 mAh g-1 after 50 cycles). The in situ electrochemical impedance spectroscopy indicated that the Sn-doped In2S3 coating can accelerate charge-transfer kinetics and facilitate the diffusion of Na+. Furthermore, theoretical calculation revealed that doping of Sn into In2S3 can reduce the energy band gap, thus accelerating the electron transfer and promoting the electrochemical conversion of active species. It is demonstrated that adjusting the electronic structure is a reliable method to improve the electrocatalytic effect of catalyst and significantly improve the performance of S cathode in RT Na-S batteries.

Fabricating Robust Pt Clusters on Sn-Doped CeO2 for CO Oxidation: A Deep Insight into Support Engineering and Surface Structural Evolution.

The size effect on nanoparticles, which affects the catalysis performance in a significant way, is crucial. The tuning of oxygen vacancies on metal-oxide support can help reduce the size of the particles in active clusters of Pt, thus improving catalysis performance of the supported catalyst. Herein, Ce-Sn solid solutions (CSO) with abundant oxygen vacancies have been synthesized. Activated by simple CO reduction after loading Pt species, the catalytic CO oxidation performance of Pt/CSO was significantly better than that of Pt/CeO2 . The reasons for the elevated activity were further explored regarding ionic Pt single sites being transformed into active Pt clusters after CO reduction. Due to more exposed oxygen vacancies, much smaller Pt clusters were created on CSO (ca. 1.2 nm) than on CeO2 (ca. 1.8 nm). Consequently, more exposed active Pt clusters significantly improved the ability to activate oxygen and directly translated to the higher catalytic oxidation performance of activated Pt/CSO catalysts in vehicle emission control applications.

Electrically Tunable Solution-Processed Transparent Conductive Thin Films Based on Colloidally Dispersed ITO@Ag Composite Ink.

Silver (Ag) introduced colloidal Sn-doped In2O3 (ITO) ink for transparent conductive electrodes (TCEs) was prepared to overcome the limitation of colloidally prepared thin film; low density thin film, high resistance. ITO@Ag colloid ink was made by controlling the weight ratio of ITO and Ag nanoparticles through ball-milling and fabricated using spin coating. These films were dried at 220 °C and heat-treated at 450−750 °C in an air atmosphere to pyrolyze the organic ligand attached to the nanoparticles. All thin films showed high crystallinity. As the thermal treatment temperature increased, films showed a cracked surface, but as the weight percentage of silver increased, a flattened and smooth surface appeared, caused by the metallic silver filling the gap between the nano-particles. This worked as a bridge to allow electrical conduction, which decreases the resistivity over an order of magnitude, from 309 to 0.396, and 0.107 Ω·cm for the ITO-220 °C, ITO-750 °C, and ITO@Ag (7.5 wt.%)-750 °C, respectively. These films also exhibited >90% optical transparency. Lowered resistivity is caused due to the inclusion of silver, providing a sufficient number of charge carriers. Furthermore, the work function difference between ITO and silver builds an ohmic junction, allowing fluent electrical flow without any barrier.

An efficient optical properties of Sn doped ZnO/CdS based solar light driven nanocomposites for enhanced photocatalytic degradation applications.

Metal sulfide - semiconductor nanocomposites synthesized with well-defined tin metal, exhibited the wide bandgap, the absorptions are limited to the UV-vis region for reduction of Reactive Blue 160 (RB 160) under solar light irradiation. The prepared samples were characterized using optoelectronic techniques. Conveniently, a wider range of wavelengths and physical properties can be enabled by doping these metal oxide nanoparticles. Whereas the photoreduction of RB 160 is unambiguously associated within charge separation and transmission progression from the excited Sn doped ZnO/CdS. Furthermore, Photocatalytic degradation efficiency for the Sn doped ZnO/CdS composites still reliant on the excitation strength, indicating the several electrons and protons were precise as a result of charge separation and transmission in prepared catalyst. Sn doped ZnO/CdS composites shows 94% Photocatalytic degradation efficiency within 120 min under sunlight irradiation. This photocatalytic nanocomposites may find capable applications in solar cells to power stretchable and also in wearable electronics.

Sn-doped BiOI assisted the excellent photocatalytic performance of multi-shelled ZnO microspheres under simulated sunlight.

To deal with the environmental pollution and energy crises, it is indispensable to find green and efficient means to overcome these challenges. Herein, the Sn-doped BiOI modified multi-shelled ZnO heterojunction composite with a high performance are designed and prepared. The results prove the formation of heterojunction structure in the composites and the morphology is shown as the multi-shelled microsphere. The performances of the composites are evaluated by different kinds of antibiotic degradation and H2-evolution under simulation sunlight irradiation. The measurements present that the Sn-BiOI/ZnO (SBZs) could completely remove ciprofloxacin (CIP) within 100 min, which is 4.18 times that of ZnO in kinetics. Typically, the degradation rate of CIP for SBZ6 is over 99.9%, which is more than 25% higher than that of pure ZnO microspheres. In addition, the rate of H2 production could reach 3.08 mmol g-1∙ h-1, which is 1.79 times of the pure ZnO microspheres. The boosted performance of the composites may originate from the enhanced electronic transmission efficiency and improved separation and recombination efficiency of electrons/holes. The charge transfer mode in the SBZs heterojunction composites is proposed and verified as the Z-scheme by the active species experimental and the possible electron transfer path analysis. Therefore, Sn-doped BiOI is introduced into multi-shelled ZnO microsphere to form contact heterojunction interfacial, which greatly improves the photocatalytic performances of the SBZs. Furthermore, this work supplies a strategy for designing and preparing highly active ZnO-based heterojunction composites, which could effectively address the challenges of environmental remediation and clean energy production.

Solvothermal synthesis of pure and Sn-doped Bi2S3 and the evaluation of their photocatalytic activity on the degradation of methylene blue.

BACKGROUND: A large volume of dye molecules finds its way into the environment, accumulates in water bodies, and makes the aquatic system unsafe to human health. Due to the complex nature of these dye materials, most of the conventional techniques are not effective for their removal. Semiconductor photocatalysis has emerged as a promising technique for  the destruction of organic pollutants under UV or visible light irradiation. Among the semiconductors, Bi2S3 is widely employed in photocatalysis due to its non-toxicity and chemical stability. However, one of its problems is the high recombination rate of the charge, and various methods have been employed to enhance the photo-reactivity. One of  these methods is the incorporation of transition elements. RESULTS: Herein, a facile solvothermal method was used to prepare Bi2S3 nanorods and needle- shaped Sn doped Bi2S3, using bismuth(III) tris(N-phenyldithiocarbamate) as a single-source precursor. The prepared nanomaterials were characterized, and used as efficient photocatalyst for the photo enhanced degradation of methylene blue (MB) dye under visible light irradiation. The nanomaterials exhibited very good photocatalytic activity towards the photo degradation of MB, showing a degradation rate of up to 83% and 94% within 150 min for the pristine and Sn doped Bi2S3,  respectively. CONCLUSION: The enhancement in the photocatalytic activity of the Sn doped Bi2S3 was attributed to the suppression in the recombination rate of the electron-hole pairs, due to the formation of new energy level below the CB, that was capable of altering the equilibrium concentration of the carrier. This confirmed that Sn doped Bi2S3 could be utilized as valuable cost-efficient catalysts for eliminating methyl blue from aqueous solutions and also possible candidates in environmental pollution treatment.

Influence of Tin Doped TiO2 Nanorods on Dye Sensitized Solar Cells.

The one-step hydrothermal method was used to synthesize Sn-doped TiO2 (Sn-TiO2) thin films, in which the variation in Sn content ranged from 0 to 7-wt % and, further, its influence on the performance of a dye-sensitized solar cell (DSSC) photoanode was studied. The deposited samples were analyzed by X-ray diffraction (XRD) and Raman spectroscopy, which confirmed the existence of the rutile phase of the synthesized samples with crystallite size ranges in between 20.1 to 22.3 nm. In addition, the bare and Sn-TiO2 thin films showed nanorod morphology. A reduction in the optical band gap from 2.78 to 2.62 eV was observed with increasing Sn content. The X-ray photoelectron spectroscopy (XPS) analysis confirmed Sn4+ was successfully replaced at the Ti4+ site. The 3-wt % Sn-TiO2 based DSSC showed the optimum efficiency of 4.01%, which was superior to 0.87% of bare and other doping concentrations of Sn-TiO2 based DSSCs. The present work reflects Sn-TiO2 as an advancing material with excellent capabilities, which can be used in photovoltaic energy conversion devices.

Sunlight-driven enhanced photocatalytic activity of bandgap narrowing Sn-doped ZnO nanoparticles.

In this paper, we grab to utilize one of the trending techniques with efficient implications in wastewater treatment of organic pollutants, the photocatalytic degradation method shining out in the research field. Herein, tin (Sn)-doped zinc oxide (ZnO) nanoparticles (NPs) (Sn/ZnO) with different doping concentrations (1, 2, 3, 4, and 5 wt%) were synthesized via a simple co-precipitation assisted method and later subjected for their physico-chemical, morphological, and optical characterization. In addition, photocatalytic activity as the concerned study was investigated as to record the different doping levels of Sn/ZnO to examine the effect of doping concentration in relation with the degradation efficiency. We know that the optical bandgap of pure ZnO was 3.26 eV while it tends to increase slightly upon increasing the doping concentration. In the present investigation, methylene blue (MB) dye was used as a model pollutant to evaluate the photocatalytic activity of Sn/ZnO photocatalysts under natural sunlight. Varied doping concentrations of Sn/ZnO were compared with different characterization techniques while XRD analysis shows up 4-Sn/ZnO with sharp peak at (1 0 1) plane with smaller grain size in comparison to other Sn/ZnO samples. The morphological recognition depicts the hexagonal structure with smaller size for 4-Sn/ZnO which offers more active sites with improved photocatalytic activity, higher surface area for the transportation of pollutants. Fluorescence spectra results revealed that Sn dopant suppresses the charge carrier recombination. The lower intensity of PL indicated reduced recombination rate, which resulted in enhancing the photocatalytic activity. To investigate the possible mechanism, kinetics and reusability studies were performed. The 4% Sn-doped ZnO nanoparticle concentration showed highest photocatalytic activity when compared with other doping levels.

Visible light-driven photocatalytic dye degradation under natural sunlight using Sn-doped CdS nanoparticles.

Herein, cadmium sulfide (CdS) nanoparticles (NPs) and different concentrations (1-5 and 10 wt %) of Sn-doped CdS NPs were prepared by a chemical precipitation method using PVP as a capping agent. The synthesized NPs were characterized using various characteristic techniques such as XRD, SEM, TEM, Raman spectroscopy, UV-Vis, and photoluminescence to investigate structural, morphological, and optical properties. Optical band gap of CdS has been tuned by substitution of Sn with different concentrations. Pure CdS and Sn-doped CdS NPs were used for the photocatalytic degradation of methylene blue (MB) dye under direct sunlight irradiation. The photocatalytic activity of the Sn-doped CdS NPs is attributed to the interface actions between Sn and CdS, which significantly decreases the recombination of a photogenerated electron-hole pair. The degradation efficiencies were found to be 91.39% and 97.56% within 180 min for pure CdS and Sn-doped CdS NPs, respectively. Among the catalysts, 4% Sn-doped CdS NPs exhibit best photocatalytic degradation efficiency after 180 min of irradiation.