Boosting External Quantum Efficiency to 12.0 % of an Ultraviolet OLED by Engineering the Horizontal Dipole Orientation of a Hot Exciton Emitter.

Currently, much research effort has been devoted to improving the exciton utilization efficiency and narrowing the emission spectra of ultraviolet (UV) fluorophores for organic light-emitting diode (OLED) applications, while almost no attention has been paid to optimizing their light out-coupling efficiency. Here, we developed a linear donor-acceptor-donor (D-A-D) triad, namely CDFDB, which possesses high-lying reverse intersystem crossing (hRISC) property. Thanks to its integrated narrowband UV photoluminescence (PL) (λPL: 397 nm; FWHM: 48 nm), moderate PL quantum yield (ϕPL: 72 %, Tol), good triplet hot exciton (HE) conversion capability, and large horizontal dipole ratio (Θ//: 92 %), the OLEDs based on CDFDB not only can emit UV electroluminescence with relatively good color purity (λEL: 398 nm; CIEx,y: 0.161, 0.040), but also show a record maximum external quantum efficiency (EQEmax) of 12.0 %. This study highlights the important role of horizontal dipole orientation engineering in the molecular design of HE UV-OLED fluorophores.

Efficient Ultraviolet Circularly Polarized Luminescence in Zero-Dimensional Hybrid Cerium Bromides.

Ultraviolet circularly polarized luminescence (UV-CPL) with high photon energy shows great potential in polarized light sources and stereoselective photopolymerization. However, developing luminescent materials with high UV-CPL performance remains challenging. Here, we report a pair of rare earth Ce3+-based zero-dimensional (0D) chiral hybrid metal halides (HMHs), R/S-(C14H24N2)2CeBr7, which exhibits characteristic UV emissions derived from the Ce 5d-4f transition. The compounds show simultaneously high photoluminescent quantum yields of (32-39)% and large luminescent dissymmetry factor (|glum|) values of (1.3-1.5)×10-2. Thus, the figures of merits of R/S-(C14H24N2)2CeBr7 are calculated to be (4.5-5.8)×10-3, which are superior to the reported UV-CPL emissive materials. Additionally, nearly 91 % of their PL intensities at 300 K can be well preserved at 380 K (LED operating temperature) without phase transition or decomposition, demonstrating the excellent structural and optical thermal stabilities of R/S-(C14H24N2)2CeBr7. Based on these enantiomers, the fabricated UV-emitting CP-LEDs exhibit high polarization degrees of ±1.0 %. Notably, the UV-CPL generated from the devices can significantly trigger the enantioselective photopolymerization of diacetylene with remarkable stereoselectivity, and consequently yield polymerized products with the anisotropy factors of circular dichroism (gCD) up to ±3.9×10-2, outperforming other UV-CPL materials and demonstrating their great potential as UV-polarized light sources.

Photonic Properties of Thin Films Composed of Gallium Nitride Quantum Dots Synthesized by Nonequilibrium Plasma Aerotaxy.

Gallium nitride quantum dots (GaN QDs) are a promising material for optoelectronics, but the synthesis of freestanding GaN QDs remains a challenge. To date, the size-dependent photonic properties of freestanding GaN QDs have not been reported. Here, we examine the photonic properties exhibited by thin films composed of GaN QDs synthesized by nonequilibrium plasma aerotaxy. Each film exhibited two photoluminescence peaks after exposure to ambient air. The first peak was in the ultraviolet spectral region, and the second peak was in the visible region. Both peak positions depended on the QD size. Our findings, supported by transient absorption spectroscopy experiments, suggest that conduction band to valence band recombination was the cause of the ultraviolet photoluminescence and that recombination between the conduction band and an acceptor level was the cause of visible photoluminescence. Furthermore, we show that coating the surface of fresh QDs with Al2O3 suppressed the visible region photoluminescence, corroborating the conclusion that the photoactive defect was caused by oxidation in air.