RESUMO
We report well-dispersed highly emitting perovskite emitters synthesized via the surfactant-assisted ball-milling method. Both the emitting peaks and the colour purity of the synthesized perovskite emitters can be effectively tuned through additive functionalization and precursor engineering.
RESUMO
The nonradiative carrier recombination at the perovskite/carrier selective layer (CSL) interface was accounted for the inferior power conversion efficiency (PCE) of perovskite solar cells (PSCs), especially rigid all-inorganic perovskite (CsPbI3 and CsPbBr3). In this study, targeting the poor interface, we introduce SbX3 (X = Cl, Br, I) surface passivation at the CsPbBr3/carbon interface. Smoothed compressive strain, reduced defect density, and enhanced energy-level alignment were achieved simultaneously, facilitating carrier extraction at the selective interface. With the simple aqueous solution-based two-step process, the PCE of our SbI3 passivated carbon-based CsPbBr3 PSCs has increased from 7.81% (without passivation) to 9.69%, a â¼25% enhancement. Specifically, Voc (1.657 V) of the SbI3-passivated cells was much higher than that of the control ones (1.488 V), confirming the ameliorated interface. Finally, our unencapsulated SbI3 passivated devices maintain 90% of their initial PCEs while left in the air for 30 days with a relative humidity of 60%. To conclude, we present an interfacial carrier extraction-enhanced strategy for preparing high-performance and stable CsPbBr3-based PSCs.
RESUMO
Due to the low cost and printable nature of the carbon paste, carbon-based perovskite solar cells (PSCs) are attractive for real application. However, the poor contact at the perovskite/carbon interface obviously hinders the achievable fill factor of the carbon-based PSCs. In this work, we introduce a pressure-assisted method to improve the contact at the perovskite/carbon interface. Via modulating the applied pressure, the power conversion efficiency of CsPbBr3 PSCs (small area) can be improved from the initial 7.40% to 7.95% (pressing) and 8.34% (hot-pressing). A more remarkable feature is that the hot-pressing process boosted the performance from 5.1% (normal) to 6.9% (hot-pressing assisted) of large-scale (0.5 cm2) devices, a more than 30% enhancement. Finally, the hot-pressing method introduced in this work shows great prospects for improving the efficiency of carbon-based PSCs, especially large-scale PSCs.
