Ammonothermal Synthesis and Solid-State NMR Study of the Imidonitridosilicate Rb3Si6N5(NH)6.

The imidonitridosilicate Rb3Si6N5(NH)6, being only the second representative of this compound class, was synthesized ammonothermally at 870 K and 230 MPa. Its crystal structure was solved from single-crystal X-ray diffraction data. The imidonitridosilicate crystallizes isotypically with the respective potassium compound in space group P4132 with the lattice parameter a=10.9422(4) Šforming a three-dimensional imidonitridosilicate tetrahedra network with voids for the rubidium ions. The structure model and the presence of the imide groups were verified by Fourier-Transform infrared (FTIR) and magic-angle spinning (MAS) NMR spectroscopy, using cross polarization 15N{1H} and 29Si{1H} MAS NMR experiments. Rb3Si6N5(NH)6 represents a possible intermediate during the ammonothermal synthesis of nitridosilicates. The characterization of such intermediates improves the understanding of the reaction pathway from ammonothermal solutions to nitrides. Thus, the ammonothermal synthesis is an alternative approach to the well-established high-temperature synthesis leading to the compound class of nitridosilicates.

Reduction of Germanium Oxides-The Mixed-Valence Germanates A2Ge4O7 (A = Na, K).

We report on the synthesis of two-layered alkali germanates, Na2Ge4O7 and K2Ge4O7. Both compounds were synthesized by using the ammonothermal method at 823 K and 100 MPa. Under these conditions, germanium is partially reduced from the +IV state to +II, forming mixed-valence compounds with the rarely observed [Ge(II)O3]4- unit. The valence state was verified by X-ray photoelectron spectroscopy (XPS) and was accompanied by theoretical calculations alongside vibrational spectroscopy and single-crystal X-ray structure determination. The compounds crystallize in the trigonal space groups (Na2Ge4O7: P3̅c1 and K2Ge4O7: P3̅m1) and feature layers of corner sharing [Ge(II)O3]4- and [Ge(IV)2O7]6- units forming [Ge(II)2Ge(IV)2O7]2- polyanions. These layers are separated by alkali metal ions. The compounds are colorless insulators with band gaps of 4.0-4.2 eV. According to the Robin-Day classification, both compounds can be described as class I materials, where the valences are trapped on specific sites.

Solid Solutions of Grimm-Sommerfeld Analogous Nitride Semiconductors II-IV-N2 (II=Mg, Mn, Zn; IV=Si, Ge): Ammonothermal Synthesis and DFT Calculations.

Grimm-Sommerfeld analogous II-IV-N2 nitrides such as ZnSiN2 , ZnGeN2 , and MgGeN2 are promising semiconductor materials for substitution of commonly used (Al,Ga,In)N. Herein, the ammonothermal synthesis of solid solutions of II-IV-N2 compounds (II=Mg, Mn, Zn; IV=Si, Ge) having the general formula (IIa 1-x IIb x )-IV-N2 with x≈0.5 and ab initio DFT calculations of their electronic and optical properties are presented. The ammonothermal reactions were conducted in custom-built, high-temperature, high-pressure autoclaves by using the corresponding elements as starting materials. NaNH2 and KNH2 act as ammonobasic mineralizers that increase the solubility of the reactants in supercritical ammonia. Temperatures between 870 and 1070 K and pressures up to 200 MPa were chosen as reaction conditions. All solid solutions crystallize in wurtzite-type superstructures with space group Pna21 (no. 33), confirmed by powder XRD. The chemical compositions were analyzed by energy-dispersive X-ray spectroscopy. Diffuse reflectance spectroscopy was used for estimation of optical bandgaps of all compounds, which ranged from 2.6 to 3.5 eV (Ge compounds) and from 3.6 to 4.4 eV (Si compounds), and thus demonstrated bandgap tunability between the respective boundary phases. Experimental findings were corroborated by DFT calculations of the electronic structure of pseudorelaxed mixed-occupancy structures by using the KKR+CPA approach.