1.
Nanoscale
; 7(20): 9164-8, 2015 May 28.
Artigo
em Inglês
| MEDLINE
| ID: mdl-25939680
RESUMO
We have previously reported on electrically pumped random lasing (RL) with onset voltages at least 3.3 V from ZnO-based light-emitting devices with metal-insulator-semiconductor (MIS) structures in the form of Au/SiO2/ZnO. Here, by inserting an â¼5 nm thick MoO3 layer between SiO2 and ZnO films in the aforementioned MIS structured device, the RL onset voltage is decreased to only â¼2.6 V and, moreover, the output optical power is multiplied several times. Such improved RL performance is ascribed to the enhanced injection of holes into ZnO via the MoO3 interlayer that features a low-lying conductive band and therefore a large work function.