Quantum fluctuations lead to glassy electron dynamics in the good metal regime of electron doped KTaO3.

One of the central challenges in condensed matter physics is to comprehend systems that have strong disorder and strong interactions. In the strongly localized regime, their subtle competition leads to glassy electron dynamics which ceases to exist well before the insulator-to-metal transition is approached as a function of doping. Here, we report on the discovery of glassy electron dynamics deep inside the good metal regime of an electron-doped quantum paraelectric system: KTaO3. We reveal that upon excitation of electrons from defect states to the conduction band, the excess injected carriers in the conduction band relax in a stretched exponential manner with a large relaxation time, and the system evinces simple aging phenomena-a telltale sign of glassy dynamics. Most significantly, we observe a critical slowing down of carrier dynamics below 35 K, concomitant with the onset of quantum paraelectricity in the undoped KTaO3. Our combined investigation using second harmonic generation technique, density functional theory and phenomenological modeling demonstrates quantum fluctuation-stabilized soft polar modes as the impetus for the glassy behavior. This study addresses one of the most fundamental questions regarding the potential promotion of glassiness by quantum fluctuations and opens a route for exploring glassy dynamics of electrons in a well-delocalized regime.

Demonstrating Pressure Jumping as a Tool to Address the Pressure Gap in High Pressure Photoelectron Spectroscopy of CO and CO2 Hydrogenation on Rh(211).

Operando probing by x-ray photoelectron spectroscopy (XPS) of certain hydrogenation reactions are often limited by the scattering of photoelectrons in the gas phase. This work describes a method designed to partially circumvent this so called pressure gap. By performing a rapid switch from a high pressure (where acquisition is impossible) to a lower pressure we can for a short while probe a "remnant" of the high pressure surface as well as the time dynamics during the re-equilibration to the new pressure. This methodology is demonstrated using the CO2 and the CO hydrogenation reaction over Rh(211). In the CO2 hydrogenation reaction, the remnant surface of a 2 bar pressure shows an adsorbate distribution which favors chemisorbed CHx adsorbates over chemisorbed CO. This contrasts against previous static operando spectra acquired at lower pressures. Furthermore, the pressure jumping method yields a faster acquisition and more detailed spectra than static operando measurements above 1 bar. In the CO hydrogenation reaction, we observe that CHx accumulated faster during the 275 mbar low pressure regime, and different hypotheses are presented regarding this observation.

Modulation-doping a correlated electron insulator.

Correlated electron materials (CEMs) host a rich variety of condensed matter phases. Vanadium dioxide (VO2) is a prototypical CEM with a temperature-dependent metal-to-insulator (MIT) transition with a concomitant crystal symmetry change. External control of MIT in VO2-especially without inducing structural changes-has been a long-standing challenge. In this work, we design and synthesize modulation-doped VO2-based thin film heterostructures that closely emulate a textbook example of filling control in a correlated electron insulator. Using a combination of charge transport, hard X-ray photoelectron spectroscopy, and structural characterization, we show that the insulating state can be doped to achieve carrier densities greater than 5 × 1021 cm-3 without inducing any measurable structural changes. We find that the MIT temperature (TMIT) continuously decreases with increasing carrier concentration. Remarkably, the insulating state is robust even at doping concentrations as high as ~0.2 e-/vanadium. Finally, our work reveals modulation-doping as a viable method for electronic control of phase transitions in correlated electron oxides with the potential for use in future devices based on electric-field controlled phase transitions.

Adsorption and Inactivation of SARS-CoV-2 on the Surface of Anatase TiO2(101).

We investigated the adsorption of severe acute respiratory syndrome corona virus 2 (SARS-CoV-2), the virus responsible for the current pandemic, on the surface of the model catalyst TiO2(101) using atomic force microscopy, transmission electron microscopy, fluorescence microscopy, and X-ray photoelectron spectroscopy, accompanied by density functional theory calculations. Three different methods were employed to inactivate the virus after it was loaded on the surface of TiO2(101): (i) ethanol, (ii) thermal, and (iii) UV treatments. Microscopic studies demonstrate that the denatured spike proteins and other proteins in the virus structure readsorb on the surface of TiO2 under thermal and UV treatments. The interaction of the virus with the surface of TiO2 was different for the thermally and UV treated samples compared to the sample inactivated via ethanol treatment. AFM and TEM results on the UV-treated sample suggested that the adsorbed viral particles undergo damage and photocatalytic oxidation at the surface of TiO2(101) which can affect the structural proteins of SARS-CoV-2 and denature the spike proteins in 30 min. The role of Pd nanoparticles (NPs) was investigated in the interaction between SARS-CoV-2 and TiO2(101). The presence of Pd NPs enhanced the adsorption of the virus due to the possible interaction of the spike protein with the NPs. This study is the first investigation of the interaction of SARS-CoV-2 with the surface of single crystalline TiO2(101) as a potential candidate for virus deactivation applications. Clarification of the interaction of the virus with the surface of semiconductor oxides will aid in obtaining a deeper understanding of the chemical processes involved in photoinactivation of microorganisms, which is important for the design of effective photocatalysts for air purification and self-cleaning materials.

Electronic structure and low-temperature thermoelectric transport of TiCoSb single crystals.

Band structure engineering has a strong beneficial impact on thermoelectric performance, where theoretical methods dominate the investigation of electronic structures. Here, we use angle-resolved photoemission spectroscopy (ARPES) to analyze the electronic structure and report on the thermoelectric transport properties of half-Heusler TiCoSb high-quality single crystals. High degeneracy of the valence bands at the L and Γ band maximum points was observed, which provides a band-convergence scenario for the thermoelectric performance of TiCoSb. Previous efforts have shown how crystallographic defects play an important role in TiCoSb transport properties, while the intrinsic properties remain elusive. Using hard X-ray photoelectron spectroscopy (HAXPES), we discard the presence of interstitial defects that could induce in-gap states near the valence band in our crystals. Contrary to polycrystalline reports, intrinsic TiCoSb exhibits p-type transport, albeit defects still affect the carrier concentration. In two initially identical p-type TiCoSb crystal batches, distinct metallic and semiconductive behaviors were found owing to defects not noticeable by elemental analysis. A varying Seebeck effective mass is consistent with the change at the Fermi level within this band convergence picture. This report tackles the direct investigation of the electronic structure of TiCoSb and reveals new insights and the strong impact of point defects on the optimization of thermoelectric properties.

Real-Time Monitoring the Growth of Epitaxial CoxFe3-xO4 Ultrathin Films on Nb-Doped SrTiO3(001) via Reactive Molecular Beam Epitaxy by Means of Operando HAXPES.

In this work, we present a comprehensive study on real-time monitoring the growth of epitaxial CoxFe3-xO4 thin films grown on SrTiO3(001) substrates via reactive molecular beam epitaxy. The growth process was monitored during evaporation by means of time resolved operando hard X-ray photoelectron spectroscopy (HAXPES). We prepared ultrathin ferrite films using different oxygen partial pressures, showing pure metallic, light oxidic, and cobalt ferrite-like growth. Additional X-ray diffraction measurements confirm HAXPES results.

Magnetic and Electronic Properties of Weyl Semimetal Co2MnGa Thin Films.

Magnetic Weyl semimetals are newly discovered quantum materials with the potential for use in spintronic applications. Of particular interest is the cubic Heusler compound Co2MnGa due to its inherent magnetic and topological properties. This work presents the structural, magnetic and electronic properties of magnetron co-sputtered Co2MnGa thin films, with thicknesses ranging from 10 to 80 nm. Polarized neutron reflectometry confirmed a uniform magnetization through the films. Hard x-ray photoelectron spectroscopy revealed a high degree of spin polarization and localized (itinerant) character of the Mn d (Co d) valence electrons and accompanying magnetic moments. Further, broadband and field orientation-dependent ferromagnetic resonance measurements indicated a relation between the thickness-dependent structural and magnetic properties. The increase of the tensile strain-induced tetragonal distortion in the thinner films was reflected in an increase of the cubic anisotropy term and a decrease of the perpendicular uniaxial term. The lattice distortion led to a reduction of the Gilbert damping parameter and the thickness-dependent film quality affected the inhomogeneous linewidth broadening. These experimental findings will enrich the understanding of the electronic and magnetic properties of magnetic Weyl semimetal thin films.

From antiferromagnetic and hidden order to Pauli paramagnetism in UM 2Si2 compounds with 5f electron duality.

Using inelastic X-ray scattering beyond the dipole limit and hard X-ray photoelectron spectroscopy we establish the dual nature of the U [Formula: see text] electrons in U[Formula: see text] (M = Pd, Ni, Ru, Fe), regardless of their degree of delocalization. We have observed that the compounds have in common a local atomic-like state that is well described by the U [Formula: see text] configuration with the [Formula: see text] and [Formula: see text] quasi-doublet symmetry. The amount of the U 5[Formula: see text] configuration, however, varies considerably across the U[Formula: see text] series, indicating an increase of U 5f itineracy in going from M = Pd to Ni to Ru and to the Fe compound. The identified electronic states explain the formation of the very large ordered magnetic moments in [Formula: see text] and [Formula: see text], the availability of orbital degrees of freedom needed for the hidden order in [Formula: see text] to occur, as well as the appearance of Pauli paramagnetism in [Formula: see text] A unified and systematic picture of the U[Formula: see text] compounds may now be drawn, thereby providing suggestions for additional experiments to induce hidden order and/or superconductivity in U compounds with the tetragonal body-centered [Formula: see text] structure.

Polarization-dependent electric potential distribution across nanoscale ferroelectric Hf0.5Zr0.5O2 in functional memory capacitors.

The emergence of ferroelectricity in nanometer-thick films of doped hafnium oxide (HfO2) makes this material a promising candidate for use in Si-compatible non-volatile memory devices. The switchable polarization of ferroelectric HfO2 controls functional properties of these devices through the electric potential distribution across the capacitor. The experimental characterization of the local electric potential at the nanoscale has not so far been realized in practice. Here, we develop a new methodology which allows us, for the first time, to experimentally quantify the polarization-dependent potential profile across few-nanometer-thick ferroelectric Hf0.5Zr0.5O2 thin films. Using a standing-wave excitation mode in synchrotron based hard X-ray photoemission spectroscopy, we depth-selectively probe TiN/Hf0.5Zr0.5O2/W prototype memory capacitors and determine the local electrostatic potential by analyzing the core-level line shifts. We find that the electric potential profile across the Hf0.5Zr0.5O2 layer is non-linear and changes with in situ polarization switching. Combined with our scanning transmission electron microscopy data and theoretical modeling, we interpret the observed non-linear potential behavior in terms of defects in Hf0.5Zr0.5O2, at both interfaces, and their charge state modulated by the ferroelectric polarization. Our results provide an important insight into the intrinsic electronic properties of HfO2 based ferroelectric capacitors and are essential for engineering memory devices.

Tunable Magnetic Phases at Fe3O4/SrTiO3 Oxide Interfaces.

We demonstrate the emergence and control of magnetic phases between magnetite (Fe3O4), a ferrimagnetic halfmetal, and SrTiO3, a transparent nonmagnetic insulator considered the bedrock of oxide-based electronics. The Verwey transition ( TV) was detected to persist from bulk-like down to ultrathin Fe3O4 films, decreasing from 117 ± 4 K (38 nm) to 25 ± 4 K (2 nm), respectively. Element-selective electronic and magnetic properties of the ultrathin films and buried interfaces are studied by angle-dependent hard X-ray photoelectron spectroscopy and X-ray magnetic circular dichroism techniques. We observe a reduction of Fe2+ ions with decreasing film thickness, accompanied by an increase of Fe3+ ions in both tetrahedral and octahedral sites and conclude on the formation of a magnetically active ferrimagnetic 2 u.c. γ-Fe2O3 intralayer. To manipulate the interfacial magnetic phase, a postannealing process causes the controlled reduction of the γ-Fe2O3 that finally leads to stoichiometric and ferrimagnetic Fe3O4/SrTiO3(001) heterointerfaces.

Effect of Polarization Reversal in Ferroelectric TiN/Hf0.5Zr0.5O2/TiN Devices on Electronic Conditions at Interfaces Studied in Operando by Hard X-ray Photoemission Spectroscopy.

Because of their compatibility with modern Si-based technology, HfO2-based ferroelectric films have recently attracted attention as strong candidates for applications in memory devices, in particular, ferroelectric field-effect transistors or ferroelectric tunnel junctions. A key property defining the functionality of these devices is the polarization dependent change of the electronic band alignment at the metal/ferroelectric interface. Here, we report on the effect of polarization reversal in functional ferroelectric TiN/Hf0.5Zr0.5O2/TiN capacitors on the potential distribution across the stack and the electronic band line-up at the interfaces studied in operando by hard X-ray photoemission spectroscopy. By tracking changes in the position of Hf0.5Zr0.5O2 core-level lines with respect to those of the TiN electrode in both short- and open-circuit configurations following in situ polarization reversal, we derive the conduction band offset to be 0.7 (1.0) eV at the top and 1.7 (1.0) eV at the bottom interfaces for polarization, pointing up (down), respectively. Energy dispersive X-ray spectroscopy profiling of the sample cross-section in combination with the laboratory X-ray photoelectron spectroscopy reveal the presence of a TiOx/TiON layer at  both interfaces. The observed asymmetry in the band line-up changes in the TiN/Hf0.5Zr0.5O2/TiN memory stack is explained by different origin of these oxidized layers and effective pinning of polarization at the top interface. The described methodology and first experimental results are useful for the optimization of HfO2-based ferroelectric memory devices under development.

Engineering of the chemical reactivity of the Ti/HfO2 interface for RRAM: experiment and theory.

The Ti/HfO2 interface plays a major role for resistance switching performances. However, clear interface engineering strategies to achieve reliable and reproducible switching have been poorly investigated. For this purpose, we present a comprehensive study of the Ti/HfO2 interface by a combined experimental-theoretical approach. Based on the use of oxygen-isotope marked Hf*O2, the oxygen scavenging capability of the Ti layer is clearly proven. More importantly, in line with ab initio theory, the combined HAXPES-Tof-SIMS study of the thin films deposited by MBE clearly establishes a strong impact of the HfO2 thin film morphology on the Ti/HfO2 interface reactivity. Low-temperature deposition is thus seen as a RRAM processing compatible way to establish the critical amount of oxygen vacancies to achieve reproducible and reliable resistance switching performances.