Computational Screening of Chalcogen-Terminated Inherent Multilayer MXenes and M2AX Precursors.

Sulfur-terminated single sheet (ss-)MXene was recently achieved by delamination of multilayered van der Waals bonded (vdW)-MXenes Nb2CS2 and Ta2CS2 synthesized through solid-state synthesis, rather than via the traditional way of selectively etching A-layers from the corresponding MAX phase. Inspired by this, we perform a computational screening study of vdW-MXenes M2CCh2 isotypical to Nb2CS2 and Ta2CS2, with M = Sc, Y, Ti, Zr, Hf, V, Nb, Ta, Mo, or W and Ch = S, Se, or Te. The thermodynamic stability of each vdW-MXene M2CCh2 is assessed, and the dynamical stability of both vdW- and ss-MXene is considered through phonon dispersions. We predict seven stable vdW-MXenes, out of which four have not been reported previously, and one, V2CSe2, incorporates a new transition metal element into this family of materials. Electronic properties are presented for the vdW- and ss-forms of the stable vdW-MXenes, suggesting that the materials are either metallic, semimetallic, or semiconducting. In previous experimental reports the vdW-MXene Nb2CS2 is synthesized by manipulation of the corresponding M2AX phase Nb2SC. Therefore, we also evaluate the thermodynamic stability of the corresponding M2AX phases, identifying 15 potentially stable phases. Six of these are experimentally reported, leaving nine new M2AX phases for future experimental investigation.

Experimental and Theoretical Investigations of Out-of-Plane Ordered Nanolaminate Transition Metal Borides: M4CrSiB2 (M = Mo, W, Nb).

We report the synthesis of three out-of-plane chemically ordered quaternary transition metal borides (o-MAB phases) of the chemical formula M4CrSiB2 (M = Mo, W, Nb). The addition of these phases to the recently discovered o-MAB phase Ti4MoSiB2 shows that this is indeed a new family of chemically ordered atomic laminates. Furthermore, our results expand the attainable chemistry of the traditional M5SiB2 MAB phases to also include Cr. The crystal structure and chemical ordering of the produced materials were investigated using high-resolution scanning transmission electron microscopy and X-ray diffraction by applying Rietveld refinement. Additionally, calculations based on density functional theory were performed to investigate the Cr preference for occupying the minority 4c Wyckoff site, thereby inducing chemical order.

Investigation of out-of-plane ordered Ti4MoSiB2from first principles.

The laminated ternary boride Mo5SiB2of T2 structure have two symmetrically inequivalent metallic sites, 16l and 4c, being occupied in a 4:1 ratio. The phase was recently shown to be stable for 80% substitution of Mo for Ti, at the majority site, forming an out-of-plane chemically ordered quaternary boride: Ti4MoSiB2. Considering that the hypothetical Ti5SiB2is theoretically predicted as not stable, a key difference in bonding characteristics is indicated for full substitution of Mo for Ti at the metallic sites. To explore the origin of formation of Ti4MoSiB2, we here investigate the electronic properties and bonding characteristics of Mo5SiB2, Ti4MoSiB2and Ti5SiB2through their density of states, projected crystal orbital Hamilton population (pCOHP), Bader charge partitioning and second order force constants. The bond between the two different metallic sites is found to be key to the stability of the compounds, evident from the pCOHP of this bond showing a peak of bonding states close to the Fermi level, which is completely filled in Mo5SiB2and Ti4MoSiB2, while only partially filled in Ti5SiB2. Furthermore, the lower electronegativity of Ti compared to Mo results in charge accumulation at the Si and B sites, which coincides with a reduced bond strength in Ti5SiB2compared to Mo5SiB2and Ti4MoSiB2. Bandstructure calculations show that all three structures are metallic. The calculated mechanical and elastic properties show reduced bulk (B) and elastic (E) moduli when introducing Ti in Mo5SiB2, from 279 and 365 GPa to 176 and 258 GPa, respectively. The Pugh criteria indicates also a slight reduction in ductility, with aG/Bratio increasing from 0.51 to 0.59.

Out-Of-Plane Ordered Laminate Borides and Their 2D Ti-Based Derivative from Chemical Exfoliation.

Exploratory theoretical predictions in uncharted structural and compositional space are integral to materials discoveries. Inspired by M5 SiB2 (T2) phases, the finding of a family of laminated quaternary metal borides, M'4 M″SiB2 , with out-of-plane chemical order is reported here. 11 chemically ordered phases as well as 40 solid solutions, introducing four elements previously not observed in these borides are predicted. The predictions are experimentally verified for Ti4 MoSiB2 , establishing Ti as part of the T2 boride compositional space. Chemical exfoliation of Ti4 MoSiB2 and select removal of Si and MoB2 sub-layers is validated by derivation of a 2D material, TiOx Cly , of high yield and in the form of delaminated sheets. These sheets have an experimentally determined direct band gap of ≈4.1 eV, and display characteristics suitable for supercapacitor applications. The results take the concept of chemical exfoliation beyond currently available 2D materials, and expands the envelope of 3D and 2D candidates, and their applications.