Thermoelectric Performance of Tetrahedrite (Cu12Sb4S13) Thin Films: The Influence of the Substrate and Interlayer.

In the present work, tetrahedrite Cu12Sb4S13 thin films were deposited on various substrates via aerosol-assisted chemical vapor deposition (AACVD) using diethyldithiocarbamate complexes as precursors. A buffer layer of Sb2O3 with a small lattice mismatch to Cu12Sb4S13 was applied to one of the glass substrates to improve the quality of the deposited thin film. The buffer layer increased the coverage of the Cu12Sb4S13 thin film, resulting in improved electrical transport properties. The growth of the Cu12Sb4S13 thin films on the other substrates, including ITO-coated glass, a SiO2-coated Si wafer, and mica, was also investigated. Compared to the films grown on the other substrates, the Cu12Sb4S13 thin film deposited on the SiO2-coated Si wafer showed a dense and compact microstructure and a larger grain size (qualities that are beneficial for carrier transport), yielding a champion power factor (PF) of ∼362 µW cm-1 K-2 at 625 K. The choice of substrate strongly influenced the composition, microstructure, and electrical transport properties of the deposited Cu12Sb4S13 thin film. At 460 K, the highest zT value that was obtained for the thin films was ∼0.18. This is comparable to values reported for Cu-Sb-S bulk materials at the same temperature. Cu12Sb4S13 thin films deposited using AACVD are promising for thermoelectric applications. To the best of our knowledge, the first full thermoelectric characterization of the Cu12Sb4S13 thin film is performed in this work.

Tunnel junctions based on interfacial two dimensional ferroelectrics.

Van der Waals heterostructures have opened new opportunities to develop atomically thin (opto)electronic devices with a wide range of functionalities. The recent focus on manipulating the interlayer twist angle has led to the observation of out-of-plane room temperature ferroelectricity in twisted rhombohedral bilayers of transition metal dichalcogenides. Here we explore the switching behaviour of sliding ferroelectricity using scanning probe microscopy domain mapping and tunnelling transport measurements. We observe well-pronounced ambipolar switching behaviour in ferroelectric tunnelling junctions with composite ferroelectric/non-polar insulator barriers and support our experimental results with complementary theoretical modelling. Furthermore, we show that the switching behaviour is strongly influenced by the underlying domain structure, allowing the fabrication of diverse ferroelectric tunnelling junction devices with various functionalities. We show that to observe the polarisation reversal, at least one partial dislocation must be present in the device area. This behaviour is drastically different from that of conventional ferroelectric materials, and its understanding is an important milestone for the future development of optoelectronic devices based on sliding ferroelectricity.

Exceptional Thermoelectric Performance of Cu2(Zn,Fe,Cd)SnS4 Thin Films.

High-quality Cu2(Zn,Fe,Cd)SnS4 (CZFCTS) thin films based on the parent CZTS were prepared by aerosol-assisted chemical vapor deposition (AACVD). Substitution of Zn by Fe and Cd significantly improved the electrical transport properties, and monophasic CZFCTS thin films exhibited a maximum power factor (PF) of ∼0.22 µW cm-1 K-2 at 575 K. The quality and performance of the CZFCTS thin films were further improved by postdeposition annealing. CZFCTS thin films annealed for 24 h showed a significantly enhanced maximum PF of ∼2.4 µW cm-1 K-2 at 575 K. This is higher than all reported values for single-phase quaternary sulfide (Cu2BSnS4, B = Mn, Fe, Co, Ni) thin films and even exceeds the PF for most polycrystalline bulk materials of these sulfides. Density functional theory (DFT) calculations were performed to understand the impact of Cd and Fe substitution on the electronic properties of CZTS. It was predicted that CZFCTS would have a smaller band gap than CZTS and a higher density of states (DoS) near the Fermi level. The thermal conductivity and thermoelectric figure of merit (zT) of the CZFCTS thin films have been evaluated, yielding an estimated maximum zT range of 0.18-0.69 at 550 K. The simple processing route and improved thermoelectric performance make CZFCTS thin films extremely promising for thermoelectric energy generation.

Enhanced Thermoelectric Performance of Tin(II) Sulfide Thin Films Prepared by Aerosol Assisted Chemical Vapor Deposition.

Orthorhombic SnS exhibits excellent thermoelectric performance as a consequence its relatively high Seebeck coefficient and low thermal conductivity. In the present work, polycrystalline orthorhombic SnS thin films were prepared by aerosol-assisted chemical vapor deposition (AACVD) using the single source precursor dibutyl-bis(diethyldithiocarbamato)tin(IV) [Sn(C4H9)2(S2CN(C2H5)2)2]. We examined the effects of the processing parameters on the composition, microstructure, and electrical transport properties of the SnS films. Deposition temperature dominates charge transport; the room temperature electrical conductivity increased from 0.003 to 0.19 S·cm-1 as deposition temperature increased from 375 to 445 °C. Similarly, the maximum power factor (PF) increased with deposition temperature, reaching ∼0.22 µW·cm-1·K-2 at 570 K. The power factors for SnS films deposited by AACVD are higher than values from earlier work on SnS bulks and SnS/SnSe films at temperatures up to 520 K. The electronic structure and electrical transport properties of SnS were investigated using density-functional theory to provide an improved understanding of the materials performance. To the best of our knowledge, the thermal conductivity (κ) of SnS film was measured for the first time allowing the figure of merit (zT) for SnS film to be evaluated. A relatively low thermal conductivity of ∼0.41 W·m-1·K-1 was obtained at 550 K for SnS films deposited at 445 °C; the corresponding zT value was ∼0.026. The SnS films are good candidates for thermoelectric applications and AACVD is a promising technique for the preparation of high-performance thermoelectric films.

Interfacial ferroelectricity in marginally twisted 2D semiconductors.

Twisted heterostructures of two-dimensional crystals offer almost unlimited scope for the design of new metamaterials. Here we demonstrate a room temperature ferroelectric semiconductor that is assembled using mono- or few-layer MoS2. These van der Waals heterostructures feature broken inversion symmetry, which, together with the asymmetry of atomic arrangement at the interface of two 2D crystals, enables ferroelectric domains with alternating out-of-plane polarization arranged into a twist-controlled network. The last can be moved by applying out-of-plane electrical fields, as visualized in situ using channelling contrast electron microscopy. The observed interfacial charge transfer, movement of domain walls and their bending rigidity agree well with theoretical calculations. Furthermore, we demonstrate proof-of-principle field-effect transistors, where the channel resistance exhibits a pronounced hysteresis governed by pinning of ferroelectric domain walls. Our results show a potential avenue towards room temperature electronic and optoelectronic semiconductor devices with built-in ferroelectric memory functions.

Ultra-thin van der Waals crystals as semiconductor quantum wells.

Control over the quantization of electrons in quantum wells is at the heart of the functioning of modern advanced electronics; high electron mobility transistors, semiconductor and Capasso terahertz lasers, and many others. However, this avenue has not been explored in the case of 2D materials. Here we apply this concept to van der Waals heterostructures using the thickness of exfoliated crystals to control the quantum well dimensions in few-layer semiconductor InSe. This approach realizes precise control over the energy of the subbands and their uniformity guarantees extremely high quality electronic transport in these systems. Using tunnelling and light emitting devices, we reveal the full subband structure by studying resonance features in the tunnelling current, photoabsorption and light emission spectra. In the future, these systems could enable development of elementary blocks for atomically thin infrared and THz light sources based on intersubband optical transitions in few-layer van der Waals materials.

Gate-Defined Quantum Confinement in InSe-Based van der Waals Heterostructures.

Indium selenide, a post-transition metal chalcogenide, is a novel two-dimensional (2D) semiconductor with interesting electronic properties. Its tunable band gap and high electron mobility have already attracted considerable research interest. Here we demonstrate strong quantum confinement and manipulation of single electrons in devices made from few-layer crystals of InSe using electrostatic gating. We report on gate-controlled quantum dots in the Coulomb blockade regime as well as one-dimensional quantization in point contacts, revealing multiple plateaus. The work represents an important milestone in the development of quality devices based on 2D materials and makes InSe a prime candidate for relevant electronic and optoelectronic applications.

Imaging of Anomalous Internal Reflections of Hyperbolic Phonon-Polaritons in Hexagonal Boron Nitride.

We use scanning near-field optical microscopy to study the response of hexagonal boron nitride nanocones at infrared frequencies, where this material behaves as a hyperbolic medium. The obtained images are dominated by a series of "hot" rings that occur on the sloped sidewalls of the nanocones. The ring positions depend on the incident laser frequency and the nanocone shape. Both dependences are consistent with directional propagation of hyperbolic phonon-polariton rays that are launched at the edges and zigzag through the interior of the nanocones, sustaining multiple internal reflections off the sidewalls. Additionally, we observe a strong overall enhancement of the near-field signal at discrete resonance frequencies. These resonances attest to low dielectric losses that permit coherent standing waves of the subdiffractional polaritons to form. We comment on potential applications of such shape-dependent resonances and the field concentration at the hot rings.

Hyperbolic phonon-polaritons in boron nitride for near-field optical imaging and focusing.

Hyperbolic materials exhibit sub-diffractional, highly directional, volume-confined polariton modes. Here we report that hyperbolic phonon polaritons allow for a flat slab of hexagonal boron nitride to enable exciting near-field optical applications, including unusual imaging phenomenon (such as an enlarged reconstruction of investigated objects) and sub-diffractional focusing. Both the enlarged imaging and the super-resolution focusing are explained based on the volume-confined, wavelength dependent propagation angle of hyperbolic phonon polaritons. With advanced infrared nanoimaging techniques and state-of-art mid-infrared laser sources, we have succeeded in demonstrating and visualizing these unexpected phenomena in both Type I and Type II hyperbolic conditions, with both occurring naturally within hexagonal boron nitride. These efforts have provided a full and intuitive physical picture for the understanding of the role of hyperbolic phonon polaritons in near-field optical imaging, guiding, and focusing applications.

Sub-diffractional volume-confined polaritons in the natural hyperbolic material hexagonal boron nitride.

Strongly anisotropic media, where the principal components of the dielectric tensor have opposite signs, are called hyperbolic. Such materials exhibit unique nanophotonic properties enabled by the highly directional propagation of slow-light modes localized at deeply sub-diffractional length scales. While artificial hyperbolic metamaterials have been demonstrated, they suffer from high plasmonic losses and require complex nanofabrication, which in turn induces size-dependent limitations on optical confinement. The low-loss, mid-infrared, natural hyperbolic material hexagonal boron nitride is an attractive alternative. Here we report on three-dimensionally confined 'hyperbolic polaritons' in boron nitride nanocones that support four series (up to the seventh order) modes in two spectral bands. The resonant modes obey the predicted aspect ratio dependence and exhibit high-quality factors (Q up to 283) in the strong confinement regime (up to λ/86). These observations assert hexagonal boron nitride as a promising platform for studying novel regimes of light-matter interactions and nanophotonic device engineering.

Influence of metal deposition on exciton-surface plasmon polariton coupling in GaAs/AlAs/GaAs core-shell nanowires studied with time-resolved cathodoluminescence.

The coupling of excitons to surface plasmon polaritons (SPPs) in Au- and Al-coated GaAs/AlAs/GaAs core-shell nanowires, possessing diameters of ~100 nm, was probed using time-resolved cathodoluminescence (CL). Excitons were generated in the metal coated nanowires by injecting a pulsed high-energy electron beam through the thin metal films. The Purcell enhancement factor (FP) was obtained by direct measurement of changes in the temperature-dependent radiative lifetime caused by the nanowire exciton-SPP coupling and compared with a model that takes into account the dependence of FP on the distance from the metal film and the thickness of the film covering the GaAs nanowires.

High-efficiency Cooper pair splitting demonstrated by two-particle conductance resonance and positive noise cross-correlation.

Entanglement is at the heart of the Einstein-Podolsky-Rosen paradox, where the non-locality is a necessary ingredient. Cooper pairs in superconductors can be split adiabatically, thus forming entangled electrons. Here, we fabricate such an electron splitter by contacting an aluminium superconductor strip at the centre of a suspended InAs nanowire. The nanowire is terminated at both ends with two normal metallic drains. Dividing each half of the nanowire by a gate-induced Coulomb blockaded quantum dot strongly impeds the flow of Cooper pairs due to the large charging energy, while still permitting passage of single electrons. We provide conclusive evidence of extremely high efficiency Cooper pair splitting via observing positive two-particle correlations of the conductance and the shot noise of the split electrons in the two opposite drains of the nanowire. Moreover, the actual charge of the injected quasiparticles is verified by shot noise measurements.

Wide-band current preamplifier for conductance measurements with large input capacitance.

A wide-band current preamplifier based on a composite operational amplifier is proposed. It has been shown that the bandwidth of the preamplifier can be significantly increased by enhancing the effective open-loop gain. The described 10(7) V/A current gain preamplifier had the bandwidth of about 100 kHz with the 1 nF input shunt capacitance. The measured preamplifier current noise was 46 fA/√Hz at 1 kHz, close to the design noise minimum. The voltage noise was found to be about 2.9 nV/√Hz at 1 kHz, which is in a good agreement with the value expected for the particular operational amplifier used in the input stage. By analysing the total produced noise we found that the optimal frequency range suitable for the fast lock-in measurements is from 1 kHz to 2 kHz. To obtain the same signal-to-noise ratio, the reported preamplifier requires ~10% of the integration time needed in measurements made with a conventional preamplifier.

Multimode Fabry-Perot conductance oscillations in suspended stacking-faults-free InAs nanowires.

We report on observation of coherent electron transport in suspended high-quality InAs nanowire-based devices. The InAs nanowires were grown by low-temperature gold-assisted vapor-liquid-solid molecular-beam-epitaxy. The high quality of the nanowires was achieved by removing the typically found stacking faults and reducing possibility of Au incorporation. Minimizing substrate-induced scattering in the device was achieved by suspending the nanowires over predefined grooves. Coherent transport involving more than a single one-dimensional mode transport was observed in the experiment and manifested by Fabry-Perot conductance oscillations. The length of the Fabry-Perot interferometer, deduced from the period of the conductance oscillations, was found to be close to the physical length of the device. The high oscillations visibility imply nearly ballistic electron transport through the nanowire.