RESUMO
Strain engineering is a promising method for tuning the electronic properties of two-dimensional (2D) materials, which are capable of sustaining enormous strain thanks to their atomic thinness. However, applying a large and homogeneous strain on these 2D materials, including the typical semiconductor MoS2, remains cumbersome. Here we report a facile strategy for the fabrication of highly strained MoS2 via chalcogenide substitution reaction (CSR) of MoTe2 with lattice inheritance. The MoS2 resulting from the sulfurized MoTe2 sustains ultra large in-plane strain (approaching its strength limit ~10%) with great homogeneity. Furthermore, the strain can be deterministically and continuously tuned to ~1.5% by simply varying the processing temperature. Thanks to the fine control of our CSR process, we demonstrate a heterostructure of strained MoS2/MoTe2 with abrupt interface. Finally, we verify that such a large strain potentially allows the modulation of MoS2 bandgap over an ultra-broad range (~1 eV). Our controllable CSR strategy paves the way for the fabrication of highly strained 2D materials for applications in devices.
RESUMO
Although the anisotropy and strategies for the modulation of the anisotropy in ReS2 have been widely reported, a comprehensive study on the inherent electronic anisotropy of ReS2 is still absent to date; therefore, the mechanism of anisotropy evolution is ambiguous as well. In this study, we have conducted a systematic investigation on the evolution of electronic anisotropy in bilayer ReS2, under the modulation of charge doping levels and temperature. It is found that the adjustability of electronic anisotropy is largely attributed to the angle-dependent scattering from defects or vacancies at a low doping level. At a high doping level, in contrast, the inherent electronic anisotropy can be recovered by filling the traps to attenuate the influence of scattering. This work renders insights into the exploration of electronic anisotropy in 2D materials.
