Piezoresistive Free-standing Microfiber Strain Sensor for High-resolution Battery Thickness Monitoring.

Highly sensitive microfiber strain sensors are promising for the detection of mechanical deformations in applications where limited space is available. In particular for in situ battery thickness monitoring where high resolution and low detection limit are key requirements. Herein, the realization of a highly sensitive strain sensor for in situ lithium-ion (Li-ion) battery thickness monitoring is presented. The compliant fiber-shaped sensor is fabricated by an upscalable wet-spinning method employing a composite of microspherical core-shell conductive particles embedded in an elastomer. The electrical resistance of the sensor changes under applied strain, exhibiting a high strain sensitivity and extremely low strain detection limit of 0.00005 with high durability of 10 000 cycles. To demonstrate the accuracy and ease of applicability of this sensor, the real-time thickness change of a Li-ion battery pouch cell is monitored during the charge and discharge cycles. This work introduces a promising approach with the least material complexity for soft microfiber strain gauges.

Electron-beam lithography of cinnamate polythiophene films: conductive nanorods for electronic applications.

We report the electron-beam induced crosslinking of cinnamate-substituted polythiophene proceeding via excited state [2+2]-cycloaddition. Network formation in thin films is evidenced by infrared spectroscopy and film retention experiments. For the polymer studied herin, the electron-stimulated process appears to be superior to photo (UV)-induced crosslinking as it leads to less degradation. Electron beam lithography (EBL) patterns cinnamate-substituted polythiophene thin films on the nanoscale with a resolution of around 100 nm. As a proof of concept, we fabricated nanoscale organic transistors using doped and cross-linked P3ZT as contact fingers in thin film transistors.

Spatiotemporal Measurement of Arterial Pulse Waves Enabled by Wearable Active-Matrix Pressure Sensor Arrays.

Wearable pressure sensors have demonstrated great potential in detecting pulse pressure waves on the skin for the noninvasive and continuous diagnosis of cardiac conditions. However, difficulties lie in positioning conventional single-point sensors on an invisible arterial line, thereby preventing the detection of adequate signal amplitude for accurate pulse wave analysis. Herein, we introduce the spatiotemporal measurements of arterial pulse waves using wearable active-matrix pressure sensors to obtain optimal pulse waveforms. We fabricate thin-film transistor (TFT) arrays with high yield and uniformity using inkjet printing where array sizes can be customizable and integrate them with highly sensitive piezoresistive sheets. We maximize the pressure sensitivity (16.8 kPa-1) and achieve low power consumption (101 nW) simultaneously by strategically modulating the TFT operation voltage. The sensor array creates a spatiotemporal pulse wave map on the wrist. The map presents the positional dependence of pulse amplitudes, which allows the positioning of the arterial line to accurately extract the augmentation index, a parameter for assessing arterial stiffness. The device overcomes the positional inaccuracy of conventional single-point sensors, and therefore, it can be used for medical applications such as arterial catheter injection or the diagnosis of cardiovascular disease in daily life.

Beyond p-Hexaphenylenes: Synthesis of Unsubstituted p-Nonaphenylene by a Precursor Protocol.

The synthesis of unsubstituted oligo-para-phenylenes (OPP) exceeding para-hexaphenylene-in the literature often referred to as p-sexiphenyl-has long remained elusive due to their insolubility. We report the first preparation of unsubstituted para-nonaphenylenes (9PPs) by extending our precursor route to poly-para-phenylenes (PPP) to a discrete oligomer. Two geometric isomers of methoxylated syn- and anti-cyclohexadienylenes were synthesized, from which 9PP was obtained via thermal aromatization in thin films. 9PP was characterized via optical, infrared and solid-state 13 C NMR spectroscopy as well as atomic force microscopy and mass spectrometry, and compared to polymeric analogues. Due to the lack of substitution, para-nonaphenylene, irrespective of the precursor isomer employed, displays pronounced aggregation in the solid state. Intermolecular excitonic coupling leads to formation of H-type aggregates, red-shifting emission of the films to greenish. 9PP allows to study the structure-property relationship of para-phenylene oligomers and polymers, especially since the optical properties of PPP depend on the molecular shape of the precursor.

Light-Emitting Electrochemical Cells Based on Conjugated Ion Gels.

π-conjugated gels are potentially useful for organic electronic applications. We present a π-conjugated ion gel, composed of substituted poly(para-phenyleneethynylene) (PPE) and an ionic liquid. This combination is well suited as an active material in a light-emitting electrochemical cells (LECs). The nanosegregated structure of the gels achieves a large interface between the polymer and ionic liquid (IL) and allows-by nature of its structure-facile ion conduction and continuous electrical conduction paths. Efficient doping significantly improves the response time. This concept should be applicable to other π-conjugated gels, and it allows the construction of gel-LECs.

Material Characterization of AISI 316L Flexure Pivot Bearings Fabricated by Additive Manufacturing.

Recently, additive manufacturing (AM) by laser metal deposition (LMD) has become a key technology for fabricating highly complex parts without any support structures. Compared to the well-known powder bed fusion process, LMD enhances manufacturing possibilities to overcome AM-specific challenges such as process inherent porosity, minor build rates, and limited part size. Moreover, the advantages aforementioned combined with conventional machining enable novel manufacturing approaches in various fields of applications. Within this contribution, the additive manufacturing of filigree flexure pivots using 316L-Si by means of LMD with powder is presented. Frictionless flexure pivot bearings are used in space mechanisms that require high reliability, accuracy, and technical cleanliness. As a contribution to part qualification, the manufacturing process, powder material, and fabricated specimens were investigated in a comprehensive manner. Due to its major impact on the process, the chemical powder composition was characterized in detail by energy dispersive X-ray spectroscopy (EDX) and inductively coupled plasma optical emission spectrometry (ICP-OES). Moreover, a profound characterization of the powder morphology and flowability was carried out using scanning electron microscopy (SEM) and novel rheological investigation techniques. Furthermore, quantitative image analysis, mechanical testing, laser scanning microscopy, and 3D shape measurement of manufactured specimens were conducted. As a result, the gained knowledge was applied for the AM-specific redesign of the flexure pivot. Finally, a qualified flexure pivot has been manufactured in a hybrid manner to subsequently ensure its long-term durability in a lifetime test bench.

Pristine Poly( para-phenylene): Relating Semiconducting Behavior to Kinetics of Precursor Conversion.

We investigated unsubstituted poly( para-phenylene) (PPP), a long-desired prototype of a conjugated polymer semiconductor. PPP was accessed via thermal aromatization of a precursor polymer bearing kinked, solubility-inducing dimethoxycyclohexadienylene moieties. IR spectroscopy and Vis ellipsometry studies revealed that the rate of conversion of the precursor to PPP increases with temperature and decreases with film density, indicating a process with high activation volume. The obtained PPP films were analyzed in thin-film transistors to gain insights into the interplay between the degree of conversion and the resulting p-type semiconducting properties. The semiconducting behavior of PPP was further unambiguously proven through IR and transistor measurements of molybdenum trioxide p-doped films.

Dipole-Switchable Poly(para-phenyleneethynylene)s: Ferroelectric Conjugated Polymers.

Dipolar 2,3-difluorobenzene units are introduced into the backbone of a poly(para-phenyleneethynylene) (PPE) to generate a ferroelectric conjugated polymer. The structural features of the partially fluorinated PPE allow for the generation of a remanent polarization in the solid state; the difluorinated benzene rings behave as molecular rotors at high temperature, while at room temperature, stacking of such rings clamps down the ring orientation. The molecular dipoles can still be oriented by moderate external electrical fields at room temperature, and this PPE is then ferroelectric. The concept should be transferable to other poly(aryleneethynylene)s, and novel conjugated ferroelectric conjugated polymers will be accessible using this concept.

Measuring the lateral charge-carrier mobility in metal-insulator-semiconductor capacitors via Kelvin-probe.

We report a Kelvin-probe method to investigate the lateral charge-transport properties of semiconductors, most notably the charge-carrier mobility. The method is based on successive charging and discharging of a pre-biased metal-insulator-semiconductor stack by an alternating voltage applied to one edge of a laterally confined semiconductor layer. The charge carriers spreading along the insulator-semiconductor interface are directly measured by a Kelvin-probe, following the time evolution of the surface potential. A model is presented, describing the device response for arbitrary applied biases allowing the extraction of the lateral charge-carrier mobility from experimentally measured surface potentials. The method is tested using the organic semiconductor poly(3-hexylthiophene), and the extracted mobilities are validated through current voltage measurements on respective field-effect transistors. Our widely applicable approach enables robust measurements of the lateral charge-carrier mobility in semiconductors with weak impact from the utilized contact materials.

Rodlike Tetracene Derivatives.

Efficient and versatile synthetic access to rodlike tetracene derivatives was developed by means of Diels-Alder cycloaddition, halogenation, halogen-metal exchange, and transition metal mediated coupling reactions. Herein, the synthesis and structural, electrical, and charge-transport properties of three of the resulting materials, namely, 2-(tetracen-2-yl)tetracene, 1,4-bis(2-tetracenyl)benzene, and 2,5-bis(2-tetracenyl)thiophene, are presented. Good crystallization behavior on SiO2 substrates, narrowing of the bandgap by 0.2 eV, and a decrease of the ionization potential of more than 0.5 eV compared to tetracene were observed. Charge-carrier field-effect mobilities on the order of 10-1  cm2 V-1 s-1 , on/off ratios of 105 , and threshold voltages Vth <15 V were found in thin-film organic field-effect transistors prepared by standard high-vacuum deposition techniques.

Improved Thin-Film Transistor Performance Through a Melt of Poly(para-phenyleneethynylene).

The performance of polymer field-effect transistors (PFETs) based on short rigid rod semiconducting poly(2,5-didodecyloxy-p-phenyleneethynylene) (D-OPPE) is highlighted. The controlled heating and cooling of thin films of D-OPPE allows for a recrystallization from the melt, boosting the performance of D-OPPE-based transistors. The improved film properties induced by controlled annealing lead to a hole field-effect mobility around 0.014 cm2 V-1 s-1 , an on/off ratio of 106 , a sub-threshold swing of 3 V dec-1 and a threshold voltage of -35 V, employing a poly(methyl methacrylate) (PMMA) gate dielectric. Thus, PFETs out of D-OPPE compete now with spin-coated, polycrystalline poly(3-hexylthiophene)-based PFETs.

Transit phenomena in organic field-effect transistors through Kelvin-probe force microscopy.

The temporal evolution of the surface-potential distribution in the channel of pentacene based field-effect transistors is investigated during the charge reversal from the electron to the hole dominated operation. This measurement allows the determination of the carrier density and electric field dependent hole mobility in the sub-threshold regime of the transistor.

High mobility indium zinc oxide thin film field-effect transistors by semiconductor layer engineering.

Indium zinc oxide thin-film transistors are fabricated via a precursor in solution route on silicon substrates with silicon dioxide gate dielectric. It is found that the extracted mobility rises, peaks, and then decreases with increasing precursor concentration instead of rising and saturating. Investigation with scanning probe techniques reveals full thickness variations within the film which are assumed to adversely affect charge transport. Additional layers are coated, and the extracted mobility is observed to increase up to 19.7 cm(2) V(-1) s(-1). The reasons for this are examined in detail by direct imaging with scanning tunneling microscopy and extracting electron density profiles from X-ray reflection measurements. It is found that the optimal concentration for single layer films is suboptimal when coating multiple layers and in fact using many layers of very low concentrations of precursor in the solution, leading to a dense, defect and void free film, affording the highest mobilities. A consistent qualitative model of layer formation is developed explaining how the morphology of the film develops as the concentration of precursor in the initial solution is varied.

Impact of structure and morphology on charge transport in semiconducting oligomeric thin-film devices.

We investigated various thin-film morphologies of vacuum-deposited highly luminescent 2,5-di-n-octyloxy-1,4-bis[4'-(styryl)styryl]benzene (Ooct-OPV5) in a typical light-emitting-diode device structure. Important modifications in the thin-film morphology and structure were obtained by changing the substrate temperature in the range 23-90 degrees C. Structural analysis by X-ray and electron diffraction provided clear evidence for polymorphism in evaporated thin films of Ooct-OPV5. Concomitantly, the hole mobility in the corresponding devices was determined by transient electroluminescence measurements. We demonstrate that the substrate temperature T(sub) is a key parameter that controls the hole mobility of the devices. Increasing T(sub) between 23 and 84 degrees C results in a progressive increase of the zero-field hole mobility from 10(-6) to 10(-4) cm(2) V(-1) s(-1). The increase in hole mobility is correlated to the average grain size in the thin films. In addition, we give evidence for the existence of a peculiar growth mode in the bulk crystal structure of Ooct-OPV5, whereby the (a,b) and (b,c) planes can grow in a homoepitaxial manner.

High CXCR3 expression in synovial mast cells associated with CXCL9 and CXCL10 expression in inflammatory synovial tissues of patients with rheumatoid arthritis.

To improve our knowledge on the pathophysiology of rheumatoid arthritis (RA), we investigated gene expression patterns in synovial tissue from RA and osteoarthritis (OA) patients. DNA oligonucleotide microarray analysis was employed to identify differentially expressed genes in synovial tissue from pathologically classified tissue samples from RA (n = 20) and OA patients (n = 10). From 7131 gene sets displayed on the microarray chip, 101 genes were found to be upregulated and 300 genes to be downregulated in RA as compared with OA. Semiquantitative reverse-transcription polymerase chain reaction, Western blotting and immunohistochemistry were used to validate microarray expression levels. These experiments revealed that Cys-X-Cys receptor (CXCR)1, CXCR2 and CXCR3 mRNAs, as well as Cys-X-Cys ligand (CXCL)9 (monokine induced by IFN-gamma) and CXCL10 (IFN-gamma inducible protein 10) mRNAs, were significantly upregulated in RA as compared with OA disease. Elevated protein levels in RA synovial tissue were detected for CXCR1 and CXCR3 by Western blotting. Using immunohistochemistry, CXCR3 protein was found to be preferentially expressed on mast cells within synovial tissue from RA patients. These findings suggest that substantial expression of CXCR3 protein on mast cells within synovial tissue from RA patients plays a significant role in the pathophysiology of RA, accompanied by elevated levels of the chemokines CXCL9 and CXCL10. Mature mast cells are likely to contribute to and sustain the inflamed state in arthritic lesions (e.g. by production of inflammatory mediators such as histamine, proteinases, arachidonic acid metabolites and cytokines). Thus, the mast cell could become a potential target in therapeutic intervention.