Plasticized Polystyrene by Addition of -Diene Based Molecules for Defect-Less CVD Graphene Transfer.

Chemical vapor deposition of graphene on transition metals is the most favored method to get large scale homogenous graphene films to date. However, this method involves a very critical step of transferring as grown graphene to desired substrates. A sacrificial polymer film is used to provide mechanical and structural support to graphene, as it is detached from underlying metal substrate, but, the residue and cracks of the polymer film after the transfer process affects the properties of the graphene. Herein, a simple mixture of polystyrene and low weight plasticizing molecules is reported as a suitable candidate to be used as polymer support layer for transfer of graphene synthesized by chemical vapor deposition (CVD). This combination primarily improves the flexibility of the polystyrene to prevent cracking during the transfer process. In addition, the polymer removal solvent can easily penetrate between the softener molecules, so that the polymer film can be easily dissolved after transfer of graphene, thereby leaving no residue. This facile method can be used freely for the large-scale transfer of 2D materials.

Designed growth of porous 2D Nb2O5 with Ag nano-particles for differential detection of UV-A and UV-C.

We demonstrate the differential detection of UV-A (ultra-violet 320-400 nm region) and UV-C (100-280 nm) using porous two-dimensional (2D) Nb2O5 and additional Ag nano-particle decoration. The 2D Nb2O5, which has band-absorption edge near the UV-A zone, was synthesized by thermodynamic conversion of 2D material NbSe2 (Nb2O5 has lower Gibbs formation energy than NbSe2). For the differential detection (to distinguish with UV-C absorption), we decorated the Ag nano-particles on the Nb2O5 surface. By coating Ag nano-particles, we can expect (i) a decrease in the area of light absorption by the Ag-coated area, and (ii) an increase of surface plasmon absorption by Ag nano-particles, especially the UV-A region, resulting in strong intensity ratio change UV-A/UV-C.

Thickness-Dependence Electrical Characterization of the One-Dimensional van der Waals TaSe3 Crystal.

Needle-like single crystalline wires of TaSe3 were massively synthesized using the chemical vapor transport method. Since the wedged-shaped single TaSe3 molecular chains were stacked along the b-axis by weak van der Waals interactions, a few layers of TaSe3 flakes could be easily isolated using a typical mechanical exfoliation method. The exfoliated TaSe3 flakes had an anisotropic planar structure, and the number of layers could be controlled by a repeated peeling process until a monolayer of TaSe3 nanoribbon was obtained. Through atomic force and scanning Kelvin probe microscope analyses, it was found that the variation in the work function with the thickness of the TaSe3 flakes was due to the interlayer screening effect. We believe that our results will not only help to add a novel quasi-1D block for nanoelectronics devices based on 2D van der Waals heterostructures, but also provide crucial information for designing proper contacts in device architecture.

A new device concept for bacterial sensing by Raman spectroscopy and voltage-gated monolayer graphene.

Electron-phonon coupling in monolayer graphene results in a modification of its Raman spectra upon charge transfer processes induced by interaction with its chemical environment or the presence of strain or defects in its structure. Modification of Raman spectra is examined in order to develop ultra-sensitive biosensing techniques for the detection, identification, differentiation and classification of bacteria associated with infectious diseases. Specifically, the electrochemical properties of top gated monolayer graphene on SiO2/Si substrates, in the absence and presence of interaction with Gram-positive bacteria (Enterococcus faecalis, Bacillus subtilis) and Gram-negative bacteria (Escherichia coli and Salmonella typhimurium), are probed by Raman spectroscopy in an applied voltage range from 0 V to 3 V. Bacteria and monolayer graphene interactions are thus electrostatically tuned. The resulting correlation of specific bacterial chemical properties and Raman spectral characteristics is reported, along with density functional theory simulations of the charge transfer mechanism. The intensities of the G and D Raman vibrational modes are modulated as a function of the applied voltage in the presence of bacteria, but remain unchanged in bare monolayer graphene. A fingerprint region is also identified in the range of 200 cm-1 to 600 cm-1, with disulfide bonds observed at 490 cm-1, associated with bacterial membrane proteins. Significantly, such observations are detected even in the absence of bacterial culturing, a time-consuming step.

Design of softened polystyrene for crack- and contamination-free large-area graphene transfer.

The fundamental issues related to the formation of mechanical cracks and the chemical residue during the transfer process of large-area CVD graphene by polymeric carrier-films are addressed in this work. This paper presents a method to design a new polymer carrier-film (using polystyrene (PS) and 4,4'-diisopropylbiphenyl (DIPB)) that is free from mechanical cracks and polymer residue during the transfer of large-area graphene from a metal catalyst. This new polymer carrier film shows excellent mechanical flexibility and good solubility in tetrahydrofuran solvent without any residue and it is confirmed that the graphene transfer process is excellent without mechanical destruction even over a large area. Our result gave a technical milestone for the real industrial application of graphene in many application areas (not only graphene but also several two-dimensional materials such as boron nitride, transition metal di-chalcogenide, and black phosphorus).

Exfoliation and Characterization of V2Se9 Atomic Crystals.

Mass production of one-dimensional, V2Se9 crystals, was successfully synthesized using the solid-state reaction of vanadium and selenium. Through the mechanical exfoliation method, the bulk V2Se9 crystal was easily separated to nanoribbon structure and we have confirmed that as-grown V2Se9 crystals consist of innumerable single V2Se9 chains linked by van der Waals interaction. The exfoliated V2Se9 flakes can be controlled thickness by the repeated-peeling method. In addition, atomic thick nanoribbon structure of V2Se9 was also obtained on a 300 nm SiO2/Si substrate. Scanning Kelvin probe microscopy analysis was used to explore the variation of work function depending on the thickness of V2Se9 flakes. We believe that these observations will be of great help in selecting suitable metal contacts for V2Se9 and that a V2Se9 crystal is expected to have an important role in future nano-electronic devices.

Triangular radial Nb2O5 nanorod growth on c-plane sapphire for ultraviolet-radiation detection.

Nb2O5 nanostructures with excellent crystallinities were grown on c-plane sapphire and employed for ultraviolet-(UV)-radiation detection. The triangular radial Nb2O5 grown on the c-sapphire substrate had a 6-fold symmetry with domain matching epitaxy on the substrate. Owing to the radial growth, the nanorods naturally connected when the deposition time increased. This structure can be used as a UV-detector directly by depositing macroscale electrodes without separation of a single nanorod and e-beam lithography process. It was confirmed that electric reactions occur at different UV irradiation wavelengths (254 nm and 365 nm).

Mechanical exfoliation and electrical characterization of a one-dimensional Nb2Se9 atomic crystal.

A novel semiconductor 1D nanomaterial, Nb2Se9, was synthesized on a bulk scale via simple vapor transport reaction between niobium and selenium. Needle-like single crystal Nb2Se9 contains numerous single Nb2Se9 chains linked by van der Waals interactions, and we confirmed that a bundle of chains can be easily separated by mechanical cleavage. The exfoliated Nb2Se9 flakes exhibit a quasi-two-dimensional layered structure, and the number of layers can be controlled using the repeated-peeling method. The work function varied depending on the thickness of the Nb2Se9 flakes as determined by scanning Kelvin probe microscopy. Moreover, we first implemented a field effect transistor (FET) based on nanoscale Nb2Se9 flakes and verified that it has p-type semiconductor characteristics. This novel 1D material can form a new family of 2D materials and is expected to play important roles in future nano-electronic devices.