Dense WDM transmission at 2 µm enabled by an arrayed waveguide grating.

We show, for the first time, dense WDM (8×20 Gbit/s) transmission at 2 µm enabled by advanced modulation formats (4-ASK Fast-OFDM) and the development of key components, including a new arrayed waveguide grating (AWGr) at 2 µm. The AWGr shows -12.8±1.78 dB of excess loss with an 18-dB extinction ratio and a thermal tunability of 0.108 nm/°C.

Optical emission of a strained direct-band-gap Ge quantum well embedded inside InGaAs alloy layers.

We studied the optical properties of a strain-induced direct-band-gap Ge quantum well embedded in InGaAs. We showed that the band offsets depend on the electronegativity of the layer in contact with Ge, leading to different types of optical transitions in the heterostructure. When group-V atoms compose the interfaces, only electrons are confined in Ge, whereas both carriers are confined when the interface consists of group-III atoms. The different carrier confinement results in different emission dynamics behavior. This study provides a solution to obtain efficient light emission from Ge.

Lateral interdot carrier transfer in an InAs quantum dot cluster grown on a pyramidal GaAs surface.

InAs quantum dot clusters (QDCs), which consist of three closely spaced QDs, are formed on nano-facets of GaAs pyramidal structures by selective-area growth using metal-organic chemical vapor deposition. Photoluminescence (PL) and time-resolved PL (TRPL) experiments, measured in the PL linewidth, peak energy and QD emission dynamics indicate lateral carrier transfer within QDCs with an interdot carrier tunneling time of 910 ps under low excitation conditions. This study demonstrates the controlled formation of laterally coupled QDCs, providing a new approach to fabricate patterned QD molecules for optical computing applications.

Band alignment tailoring of InAs1-xSbx/GaAs quantum dots: control of type I to type II transition.

We report the growth of InAs(1-x)Sb(x) self-assembled quantum dots (QDs) on GaAs (100) by molecular beam epitaxy. The optical properties of the QDs are investigated by photoluminescence (PL) and time-resolved photoluminescence (TRPL). A type I to type II band alignment transition is demonstrated by both power-dependent PL and TRPL in InAs(1-x)Sb(x) QD samples with increased Sb beam flux. Results are compared to an eight-band strain-dependent k x p model incorporating detailed QD structure and alloy composition. The calculations show that the conduction band offset of InAs(1-x)Sb(x)/GaAs can be continuously tuned from 0 to 500 meV and a flat conduction band alignment exists when 60% Sb is incorporated into the QDs. Our study offers the possibility of tailoring the band structure of GaAs based InAsSb QDs and opens up new means for device applications.