Modulating Neuromorphic Behavior of Organic Synaptic Electrolyte-Gated Transistors Through Microstructure Engineering and Potential Applications.

Organic synaptic transistors are a promising technology for advanced electronic devices with simultaneous computing and memory functions and for the application of artificial neural networks. In this study, the neuromorphic electrical characteristics of organic synaptic electrolyte-gated transistors are correlated with the microstructural and interfacial properties of the active layers. This is accomplished by utilizing a semiconducting/insulating polyblend-based pseudobilayer with embedded source and drain electrodes, referred to as PB-ESD architecture. Three variations of poly(3-hexylthiophene) (P3HT)/poly(methyl methacrylate) (PMMA) PB-ESD-based organic synaptic transistors are fabricated, each exhibiting distinct microstructures and electrical characteristics, thus serving excellent samples for exploring the critical factors influencing neuro-electrical properties. Poor microstructures of P3HT within the active layer and a flat active layer/ion-gel interface correspond to typical neuromorphic behaviors such as potentiated excitatory postsynaptic current (EPSC), paired-pulse facilitation (PPF), and short-term potentiation (STP). Conversely, superior microstructures of P3HT and a rough active layer/ion-gel interface correspond to significantly higher channel conductance and enhanced EPSC and PPF characteristics as well as long-term potentiation behavior. Such devices were further applied to the simulation of neural networks, which produced a good recognition accuracy. However, excessive PMMA penetration into the P3HT conducting channel leads to features of a depressed EPSC and paired-pulse depression, which are uncommon in organic synaptic transistors. The inclusion of a second gate electrode enables the as-prepared organic synaptic transistors to function as two-input synaptic logic gates, performing various logical operations and effectively mimicking neural modulation functions. Microstructure and interface engineering is an effective method to modulate the neuromorphic behavior of organic synaptic transistors and advance the development of bionic artificial neural networks.

Bacteria Contaminants Detected by Organic Inverter-Based Biosensors.

The importance of bacteria detection lies in its role in enabling early intervention, disease prevention, environmental protection, and effective treatment strategies. Advancements in technology continually enhance the speed, accuracy, and sensitivity of detection methods, aiding in addressing these critical issues. This study first reports the fabrication of an inverter constructed using crosslinked-poly(4-vinylphenol) (C-PVP) as the dielectric layer and an organic complementary metal-oxide semiconductor (O-CMOS) based on pentacene and N,N'-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (PTCDI-C13) as a diagnostic biosensor to rapidly detect bacterial concentration. Bacteria including Escherichia coli O157, Staphylococcus aureus ATCC25922, and Enterococcus faecalis SH-1051210 were analysed on the inverters at an ultra-low operating voltage of 2 V. The high density of negative charge on bacteria surfaces strongly modulates the accumulated negative carriers within the inverter channel, resulting in a shift of the switching voltage. The inverter-based bacteria sensor exhibits a linear-like response to bacteria concentrations ranging from 102 to 108 CFU/mL, with a sensitivity above 60%. Compared to other bacterial detectors, the advantage of using an inverter lies in its ability to directly read the switching voltage without requiring an external computing device. This facilitates rapid and accurate bacterial concentration measurement, offering significant ease of use and potential for mass production.

Achieving Bright Organic Light-Emitting Field-Effect Transistors with Sustained Efficiency through Hybrid Contact Design.

Organic light-emitting field-effect transistors (OLEFETs) with bilayer structures have been widely studied due to their potential to integrate high-mobility organic transistors and efficient organic light-emitting diodes. However, these devices face a major challenge of imbalance charge transport, leading to a severe efficiency roll-off at high brightness. Here, we propose a solution to this challenge by introducing a transparent organic/inorganic hybrid contact with specially designed electronic structures. Our design aims to steadily accumulate the electrons injected into the emissive polymer, allowing the light-emitting interface to effectively capture more holes even when the hole current increases. Our numerical simulations show that the capture efficiency of these steady electrons will dominate charge recombination and lead to a sustained external quantum efficiency of 0.23% over 3 orders of magnitude of brightness (4 to 7700 cd/m2) and current density (1.2 to 2700 mA/cm2) from -4 to -100 V. The same enhancement is retained even after increasing the external quantum efficiency (EQE) to 0.51%. The high and tunable brightness with stable efficiency offered by hybrid-contact OLEFETs makes them ideal light-emitting devices for various applications. These devices have the potential to revolutionize the field of organic electronics by overcoming the fundamental challenge of imbalance charge transport.

Sputter-Deposited High Entropy Alloy Thin Film Electrocatalyst for Enhanced Oxygen Evolution Reaction Performance.

Thin film catalysts, giving a different morphology, provide a significant advantage over catalyst particles for the gas evolution reaction. Taking the advantages of sputter deposition, a high entropy alloy (HEA) thin film electrocatalyst is hereby reported for the oxygen evolution reaction (OER). The catalyst characteristics are investigated not only in its as-deposited state, but also during and after the OER. For comparison, unary, binary, ternary, and quaternary thin film catalysts are prepared and characterized. The surface electronic structure modification due to the addition of a metal is studied experimentally and theoretically using density functional theory calculation. It is demonstrated that sputtered FeNiMoCrAl HEA thin film exhibits OER performance superior to all the reported HEA catalysts with robust electrocatalytic activity having a low overpotential of 220 mV at 10 mA cm-2 , and excellent electrochemical stability at different constant current densities of 10 and 100 mA cm-2 for 50 h. Furthermore, the microstructure transformation is investigated during the OER, which is important for the understanding of the OER mechanism provided by HEA electrocatalyst. Such a finding will contribute to future catalyst design.

Ferromagnetism above Room Temperature in a Ni-Doped Organic-Based Magnetic Semiconductor.

Ferromagnetic semiconductors with structural flexibility are an indispensable feature for future flexible spin-electronic applications. In this case, we introduce magnetic ingredients into an organic semiconductor, namely, pentacene, to form a ferromagnetic organic semiconductor (FOS). The first observation for ferromagnetic Ni-doped pentacene semiconductors at room temperature in the field of semiconductor spintronics is reported in this article. To date, the mechanism of FOSs with ferromagnetism is not understood yet, especially when their Curie temperature is enhanced above room temperature. Here, we demonstrate dopants of Ni atoms and the modulation of the growth temperature in the FOS films to achieve room-temperature ferromagnetic properties in a series of FOS films, one of which has a maximum coercivity of 257.6 Oe. The spin-exchange interaction between a Ni atom and a pentacene molecule is detected through the magnetic hysteresis obtained using a superconducting quantum interference device magnetometer. We verify the effectiveness of this spin coupling through magnetic force microscopy, Raman spectroscopy, scanning Kelvin probe microscopy, and theoretical simulation. A model for the indirect spin coupling between Ni atoms is proposed for the mechanism of room-temperature ferromagnetic ordering of spins due to the exchange force indirectly. We believe that the π-electrons of pentacene molecules at the triple state for this model can support the spin coupling of electrons of Ni atoms. Our findings facilitate the development of brand-new spintronic devices with structural flexibility and room-temperature ferromagnetism.

A New High Entropy Glycerate for High Performance Oxygen Evolution Reaction.

Herein, a new high entropy material is reported, i.e., a noble metal-free high entropy glycerate (HEG), synthesized via a simple solvothermal process. The HEG consists of 5 different metals of Fe, Ni, Co, Cr, and Mn. The unique glycerate structure exhibits an excellent oxygen evolution reaction (OER) activity with a low overpotential of 229 and 278 mV at current densities of 10 and 100 mA cm-2, respectively, in 1 m KOH electrolyte, outperforming its subsystems of binary-, ternary-, and quaternary-metal glycerates. The HEG also shows outstanding stability and durability in the alkaline electrolyte. The result demonstrates the significance of synergistic effect that gives additional freedoms to modify the electronic structure and coordination environment. Moreover, HEG@HEG electrolyzer shows a good overall water splitting performance and durability, requiring a cell voltage of 1.63 V to achieve a current density of 10 mA cm-2.

Synergistic Effects of Binary-Solvent Annealing for Efficient Polymer-Fullerene Bulk Heterojunction Solar Cells.

Conjugated polymer-fullerene-based bulk-heterojunction (BHJ) organic solar cells (OSCs) have attracted tremendous attention over the past two decades because of their potential to develop low-cost and easy methods to produce energy from light. The complicated microstructure and morphology with randomly organized architecture of these polymer-fullerene-based active layers (ALs) is a key factor that limits photovoltaic performance. In this study, a binary-solvent annealing (BSA) approach was established to improve the poly(3-hexylthiophene):indene-C60 bisadduct-based AL for efficient BHJ-type OSCs by varying the second solvents with different boiling points (BP). Thus, we were able to change the evaporation behavior of cosolvents and consequently obtain the various microstructural properties of the AL. An in-depth study was conducted on the solvent-evaporation driven morphology of the active layer under various cosolvent conditions and its effect on the photovoltaic parameters of OSCs. Under the BSA processes, we found that the specimens with low-BP second solvents allows us to observe a more ideal AL for increasing photon absorption and efficient charge transport and collection at the respective electrodes, resulting in enhanced PCE of the corresponding OSCs. By contrast, the specimens with high-BP second solvents exhibit random microstructures, which are detrimental to charge transport and collection and lead to diminished PCE of the corresponding OSCs. By appropriately selecting the composition of a binary solvent, BSA can be employed as an easy method for the effective manipulation of the microstructures of ALs. BSA is a promising technique for the performance enhancement of not only OSCs but also other organic/polymeric-based electronic devices.

Spontaneous Formation of an Ideal-Like Field-Effect Channel for Decay-Free Polymeric Thin-Film Transistors by Multiple-Scale Phase Separation.

We demonstrate semiconducting polymer-based thin-film transistors (PTFTs) with fast switching performance and an uncommon nondecaying feature. These PTFTs based on widely studied poly(3-hexylthiophene) are developed by incorporating the insulating polymer into the active channel and subjecting the compound to specific, spontaneous multiple-scale phase separation (MSPS). An in-depth study is conducted on the interfacial and phase-separated microstructure of the semiconducting/insulating blending active layer and its effect on the electrical characteristics of PTFTs. The polyblends exhibit a confined crystallization behavior with continuously semiconducting crystalline domains between scattered insulator-rich domains. The insulator-rich domains can block leakage current and strengthen the gate control of the channel. A small amount of the insulating polymer penetrates the bottom of the active channel, resulting in effective interface modification. We show specific MSPS morphology of the present blending films to reduce charge trapping effects, enhance charge accumulation, and create a high-seed switching channel. The findings enable us to develop the required morphological conceptual model of the ideal-like field-effect-modulated polymer-based active channel. The polyblend-based PTFTs with MSPS morphology also have promising sensing functions. This study offers an effective approach for overcoming the major drawbacks (instability and poor switching) of PTFTs, thus allowing such transistors to have potential applications.