Engineering Two-Dimensional Nodal Semimetals in Functionalized Biphenylene by Fluorine Adatoms.

We propose a band engineering scheme on the biphenylene network, a newly synthesized carbon allotrope. We illustrate that the electronic structure of the biphenylene network can be significantly altered by controlling conditions affecting the symmetry and destructive interference of wave functions through periodic fluorination. First, we investigate the mechanism for the appearance of a type-II Dirac fermion in a pristine biphenylene network. We show that the essential ingredients are mirror symmetries and stabilization of the compact localized eigenstates via destructive interference. While the former is used for the band-crossing point along high symmetry lines, the latter induces highly inclined Dirac dispersions. Subsequently, we demonstrate the transformation of the biphenylene network's type-II Dirac semimetal phase into various Dirac phases such as type-I Dirac, gapped type-II Dirac, and nodal line semimetals through the deliberate disruption of mirror symmetry or modulation of destructive interference by varying the concentration of fluorine atoms.

Biocompatible Flexible Carbon Fabric for Joule Heaters With and Without Graphene Oxide Coating.

In this study, we demonstrate a carbon-based fabric Joule heater with and without a graphene oxide (GO) thin coating. The electrothermal performance of the carbon fabric used in the Joule heater was obtained using an infrared camera and by conducting electrical measurements. The outer GO could control the electrothermal efficiency and heating rate. In this research work, using the Joule heating of thin graphene films, we report adaptive thermal heating with electrical control covering temperatures ranging 30 to 50 °C (near infrared). This electrothermal GO materials can be potential nano-materials for various functional applications. Moreover, we demonstrate a general approach to achieve spin-coating of GO and confirm its biocompatibility Such biocompatibility indicates the non-toxic nature of GO, thereby extending its possible use in biomedical applications.

Layer-engineered large-area exfoliation of graphene.

The competition between quality and productivity has been a major issue for large-scale applications of two-dimensional materials (2DMs). Until now, the top-down mechanical cleavage method has guaranteed pure perfect 2DMs, but it has been considered a poor option in terms of manufacturing. Here, we present a layer-engineered exfoliation technique for graphene that not only allows us to obtain large-size graphene, up to a millimeter size, but also allows selective thickness control. A thin metal film evaporated on graphite induces tensile stress such that spalling occurs, resulting in exfoliation of graphene, where the number of exfoliated layers is adjusted by using different metal films. Detailed spectroscopy and electron transport measurement analysis greatly support our proposed spalling mechanism and fine quality of exfoliated graphene. Our layer-engineered exfoliation technique can pave the way for the development of a manufacturing-scale process for graphene and other 2DMs in electronics and optoelectronics.

Electronic phase separation in multilayer rhombohedral graphite.

Of the two stable forms of graphite, hexagonal and rhombohedral, the former is more common and has been studied extensively. The latter is less stable, which has so far precluded its detailed investigation, despite many theoretical predictions about the abundance of exotic interaction-induced physics1-6. Advances in van der Waals heterostructure technology7 have now allowed us to make high-quality rhombohedral graphite films up to 50 graphene layers thick and study their transport properties. Here we show that the bulk electronic states in such rhombohedral graphite are gapped8 and, at low temperatures, electron transport is dominated by surface states. Because of their proposed topological nature, the surface states are of sufficiently high quality to observe the quantum Hall effect, whereby rhombohedral graphite exhibits phase transitions between a gapless semimetallic phase and a gapped quantum spin Hall phase with giant Berry curvature. We find that an energy gap can also be opened in the surface states by breaking their inversion symmetry by applying a perpendicular electric field. Moreover, in rhombohedral graphite thinner than four nanometres, a gap is present even without an external electric field. This spontaneous gap opening shows pronounced hysteresis and other signatures characteristic of electronic phase separation, which we attribute to emergence of strongly correlated electronic surface states.

Single-photon emission from single-electron transport in a SAW-driven lateral light-emitting diode.

The long-distance quantum transfer between electron-spin qubits in semiconductors is important for realising large-scale quantum computing circuits. Electron-spin to photon-polarisation conversion is a promising technology for achieving free-space or fibre-coupled quantum transfer. In this work, using only regular lithography techniques on a conventional 15 nm GaAs quantum well, we demonstrate acoustically-driven generation of single photons from single electrons, without the need for a self-assembled quantum dot. In this device, a single electron is carried in a potential minimum of a surface acoustic wave (SAW) and is transported to a region of holes to form an exciton. The exciton then decays and creates a single optical photon within 100 ps. This SAW-driven electroluminescence, without optimisation, yields photon antibunching with g(2)(0) = 0.39 ± 0.05 in the single-electron limit (g(2)(0) = 0.63 ± 0.03 in the raw histogram). Our work marks the first step towards electron-to-photon (spin-to-polarisation) qubit conversion for scaleable quantum computing architectures.

One-Dimensional Poisson Calculation for Electrically Controlled Band Bending in GaAs/AlGaAs Heterostructure.

Here, we describe the band-bending situation for introducing electrons in an undoped GaAs and AlGaAs quantum well. Our calculation has shown that an externally applied electric field can modulate two-dimensional electron gas (2DEG) without standard modulation doping. The topic of electrically modulated 2DEG has only background impurities, no intentional dopants, so scattering or dephasing by background potential fluctuations should be much reduced. Using our calculation, it is straightforward to confine carriers (in the range of 1010~1011 cm-2), when the external electric field is more than threshold voltage, 4 V to the surface metal gate.

Methane-Mediated Vapor Transport Growth of Monolayer WSe2 Crystals.

The electrical and optical properties of semiconducting transition metal dichalcogenides (TMDs) can be tuned by controlling their composition and the number of layers they have. Among various TMDs, the monolayer WSe2 has a direct bandgap of 1.65 eV and exhibits p-type or bipolar behavior, depending on the type of contact metal. Despite these promising properties, a lack of efficient large-area production methods for high-quality, uniform WSe2 hinders its practical device applications. Various methods have been investigated for the synthesis of large-area monolayer WSe2, but the difficulty of precisely controlling solid-state TMD precursors (WO3, MoO3, Se, and S powders) is a major obstacle to the synthesis of uniform TMD layers. In this work, we outline our success in growing large-area, high-quality, monolayered WSe2 by utilizing methane (CH4) gas with precisely controlled pressure as a promoter. When compared to the catalytic growth of monolayered WSe2 without a gas-phase promoter, the catalytic growth of the monolayered WSe2 with a CH4 promoter reduced the nucleation density to 1/1000 and increased the grain size of monolayer WSe2 up to 100 µm. The significant improvement in the optical properties of the resulting WSe2 indicates that CH4 is a suitable candidate as a promoter for the synthesis of TMD materials, because it allows accurate gas control.

Water-based and biocompatible 2D crystal inks for all-inkjet-printed heterostructures.

Exploiting the properties of two-dimensional crystals requires a mass production method able to produce heterostructures of arbitrary complexity on any substrate. Solution processing of graphene allows simple and low-cost techniques such as inkjet printing to be used for device fabrication. However, the available printable formulations are still far from ideal as they are either based on toxic solvents, have low concentration, or require time-consuming and expensive processing. In addition, none is suitable for thin-film heterostructure fabrication due to the re-mixing of different two-dimensional crystals leading to uncontrolled interfaces and poor device performance. Here, we show a general approach to achieve inkjet-printable, water-based, two-dimensional crystal formulations, which also provide optimal film formation for multi-stack fabrication. We show examples of all-inkjet-printed heterostructures, such as large-area arrays of photosensors on plastic and paper and programmable logic memory devices. Finally, in vitro dose-escalation cytotoxicity assays confirm the biocompatibility of the inks, extending their possible use to biomedical applications.