Photo thermal effect graphene detector featuring 105 Gbit s-1 NRZ and 120 Gbit s-1 PAM4 direct detection.

One of the main challenges of next generation optical communication is to increase the available bandwidth while reducing the size, cost and power consumption of photonic integrated circuits. Graphene has been recently proposed to be integrated with silicon photonics to meet these goals because of its high mobility, fast carrier dynamics and ultra-broadband optical properties. We focus on graphene photodetectors for high speed datacom and telecom applications based on the photo-thermo-electric effect, allowing for direct optical power to voltage conversion, zero dark current, and ultra-fast operation. We report on a chemical vapour deposition graphene photodetector based on the photo-thermoelectric effect, integrated on a silicon waveguide, providing frequency response >65 GHz and optimized to be interfaced to a 50 Ω voltage amplifier for direct voltage amplification. We demonstrate a system test leading to direct detection of 105 Gbit s-1 non-return to zero and 120 Gbit s-1 4-level pulse amplitude modulation optical signals.

Electro-chromic structure with a high degree of dielectric tunability.

In conjunction with their electronically reconfigurable optical properties, inorganic, WO3/LiNbO3/NiO Electro-Chromic materials (EC) have recently been shown to exhibit a degree of electric field induced dielectric tunability at radio frequencies, to the level comparable with more mature bulk-tuneable technologies. However, the full extent of their dielectric tunability remains fully unexplored, due to a fundamental lack of understanding of its intricate tuning mechanisms. The unveiling of their tuning principles is paramount towards a comprehension of not only their optical and radio frequency dielectric tunability, but also for the creation of EC structures with substantial permittivity tuning ratios. Here, we report on an inorganic, WO3 and LiNbO3 - based EC structure with perturbed constituent layers. We developed and synthesised a new EC structure by inserting the chromic layers in the interior of the device and partitioning the electrolyte layer and assigning it to the device's peripheries. This new arrangement allows for an increase in the dielectric tunability of over three times compared to previously reported standard EC structures in the frequency range from 1-20 GHz.

Tuneable dielectric and optical characteristics of tailor-made inorganic electro-chromic materials.

Electro-chromic materials (EC) are a new class of electronically reconfigurable thin films that have the ability to reversibly change optical properties by electric charge insertion/extraction. Since their discovery by Deb, they have been employed in applications related to display technology, such as smart windows and mirrors and active optical filters. In this sense, a variety of studies related to the tuneable optical characteristics of EC materials have recently been reported, however, their microwave tuneable dielectric characteristics have been left somewhat unexplored. In 2016 Bulja showed that dc bias voltage induced modulation of the optical characteristics of an inorganic Conductor/WO3/LiNbO3/NiO/Conductor EC cell isaccompanied by the modulation of its high frequency (1-20 GHz) dielectric characteristics. In general, according to the state of the art, cells of different material compositions are needed to produce devices of tailor made characteristics. Here, we report the discovery that the microwave dielectric and the optical characteristics of an EC cell can be engineered to suit a variety of applications without changing their material composition. The obtained results indicate the potential for producing novel, tuneable and tailor-engineered materials that can be used to create next generation agile microwave-optical devices.