Extracting more light for vertical emission: high power continuous wave operation of 1.3-µm quantum-dot photonic-crystal surface-emitting laser based on a flat band.

For long distance optical interconnects, 1.3-µm surface-emitting lasers are key devices. However, the low output power of several milliwatts limits their application. In this study, by introducing a two-dimensional photonic-crystal and using InAs quantum dots as active materials, a continuous-wave, 13.3-mW output power, 1.3-µm wavelength, room-temperature surface-emitting laser is achieved. In addition, such a device can be operated at high temperatures of up to 90 °C. The enhanced output power results from the flat band structure of the photonic crystal and an extra feedback mechanism. Surface emission is realized by photonic crystal diffraction and thus the distributed Bragg reflector is eliminated. The proposed device provides a means to overcome the limitations of low-power 1.3-µm surface-emitting lasers and increase the number of applications thereof.

Enhancing Third- and Fifth-Order Nonlinearity via Tunneling in Multiple Quantum Dots.

The nonlinearity of semiconductor quantum dots under the condition of low light levels has many important applications. In this study, linear absorption, self-Kerr nonlinearity, fifth-order nonlinearity and cross-Kerr nonlinearity of multiple quantum dots, which are coupled by multiple tunneling, are investigated by using the probability amplitude method. It is found that the linear and nonlinear properties of multiple quantum dots can be modified by the tunneling intensity and energy splitting of the system. Most importantly, it is possible to realize enhanced self-Kerr nonlinearity, fifth-order nonlinearity and cross-Kerr nonlinearity with low linear absorption by choosing suitable parameters for the multiple quantum dots. These results have many potential applications in nonlinear optics and quantum information devices using semiconductor quantum dots.

Parity-time symmetry in coherent asymmetric double quantum wells.

A coherently prepared asymmetric double semiconductor quantum well (QW) is proposed to realize parity-time (PT) symmetry. By appropriately tuning the laser fields and the pertinent QW parameters, PT-symmetric optical potentials are obtained by three different methods. Such a coherent QW system is reconfigurable and controllable, and it can generate new approaches of theoretically and experimentally studying PT-symmetric phenomena.

Asymmetric light diffraction of two-dimensional electromagnetically induced grating with PT symmetry in asymmetric double quantum wells.

An asymmetric double semiconductor quantum well is proposed to realize two-dimensional parity-time (PT) symmetry and an electromagnetically induced grating. In such a nontrivial grating with PT symmetry, the incident probe photons can be diffracted to selected angles depending on the spatial relationship of the real and imaginary parts of the refractive index. Such results are due to the interference mechanism between the amplitude and phase of the grating and can be manipulated by the probe detuning, modulation amplitudes of the standing wave fields, and interaction length of the medium. Such a system may lead to new approaches of observing PT-symmetry-related phenomena and has potential applications in photoelectric devices requiring asymmetric light transport using semiconductor quantum wells.

Design considerations of high-performance InGaAs/InP single-photon avalanche diodes for quantum key distribution.

InGaAs/InP single-photon avalanche diodes (SPADs) are widely used in practical applications requiring near-infrared photon counting such as quantum key distribution (QKD). Photon detection efficiency and dark count rate are the intrinsic parameters of InGaAs/InP SPADs, due to the fact that their performances cannot be improved using different quenching electronics given the same operation conditions. After modeling these parameters and developing a simulation platform for InGaAs/InP SPADs, we investigate the semiconductor structure design and optimization. The parameters of photon detection efficiency and dark count rate highly depend on the variables of absorption layer thickness, multiplication layer thickness, excess bias voltage, and temperature. By evaluating the decoy-state QKD performance, the variables for SPAD design and operation can be globally optimized. Such optimization from the perspective of specific applications can provide an effective approach to design high-performance InGaAs/InP SPADs.

Observation of the fluorescence spectrum for a driven cascade model system in atomic beam.

We experimentally study the resonance fluorescence from an excited two-level atom when the atomic upper level is coupled by a nonresonant field to a higher-lying state in a rubidium atomic beam. The heights, widths and positions of the fluorescence peaks can be controlled by modifying the detuning of the auxiliary field. We explain the observed spectrum with the transition properties of the dressed states generated by the coupling of the two laser fields. We also attribute the line narrowing to the effects of Spontaneously Generated Coherence between the close-lying levels in the dressed state picture generated by the auxiliary field. And the corresponding spectrum can be viewed as the evidence of Spontaneously Generated Coherence. The experimental results agree well with calculations based on the density-matrix equations.