SiO2-coated lead halide perovskites core-shell and their applications: a mini-review.

Research on lead halide perovskites has demonstrated that they are one of the potential materials for optoelectronic and bio-related applications owing to their promising optical and electronic properties. However, their poor chemical stability in ambient environments is a critical factor that affects their practical applications. Silica is known for its excellent environmental/chemical stability and good optical properties. Therefore, SiO2-coated lead halide perovskites have been studied by introducing the protective layer containing SiO2 to prevent the rapid destruction of their surface chemistry and environmental degradation. It is found that lead halide perovskite core-shell can significantly improve the stability and preserve their high photoluminescence quantum yield. In addition, controlling the shell thickness is also important to produce effective and suitable inorganic halide perovskites core-shell for practical applications. This mini-review discusses the stability, synthesis method and applications of SiO2-coated lead halide perovskite core-shell. Furthermore, the effect of the SiO2 shell thickness on lead halide perovskite core-shell-based applications is also reviewed.

The solvent effect on the morphology and molecular ordering of benzothiadiazole-based small molecule for inkjet-printed thin-film transistors.

A small molecule organic semiconductor, D(D'-A-D')2 comprising benzothiadiazole as an acceptor, 3-hexylthiophene, and thiophene as donors, was successfully synthesized. X-ray diffraction and atomic force microscopy were used to investigate the effect of a dual solvent system with varying ratios of chloroform and toluene on film crystallinity and film morphology via inkjet printing. The film prepared with a chloroform to toluene ratio of 1.5 : 1 showed better performance with improved crystallinity and morphology due to having enough time to control the arrangement of molecules. In addition, by optimizing ratios of CHCl3 to toluene, the inkjet-printed TFT based on 3HTBTT using a CHCl3 and toluene ratio of 1.5 : 1 was successfully fabricated and exhibited a hole mobility of 0.01 cm2 V-1 s-1 due to the improved molecular ordering of the 3HTBTT film.

Polymers based on thieno[3,4-c]pyrrole-4,6-dione and pyromellitic diimide by CH-CH arylation reaction for high-performance thin-film transistors.

Three homopolymers were successfully synthesized by direct CH-CH arylation polymerization of thieno[3,4-c]pyrrole-4,6-dione or pyromellitic diimide derivatives affording highly purified polymers with high molecular weights (43.0-174.7 K). Thieno[3,4-c]pyrrole-4,6-dione and pyromellitic diimide derivatives are considered as electron-withdrawing units. The synthesized homopolymers P1, P2, and P3 showed band gaps in the range of 2.13-2.08 eV, respectively. The electron mobilities of the three homopolymers have been investigated. The thin film transistor for P1 prepared by the eutectic-melt-assisted nanoimprinting method achieved an electron mobility of 2.11 × 10-3 cm2 s-1 V-1. Based on the obtained results, the synthesized polymers can be used as potential electron acceptors in solar cell applications.

Intermolecular interactions of an isoindigo-based organic semiconductor with various crosslinkers through hydrogen bonding.

Three crosslinkers (1,4-diaminobutane, 1,8-diaminooctane, and 1,6-hexanediol) were selected to produce hydrogen-bonded networks using a simple and effective method. The effects of these crosslinkers on the arrangement of crystalline structures were successfully studied using X-ray diffraction and high-voltage electron microscopy. The hydrogen-bonded isoindigo-based small molecules with 1,4-diaminobutane showed the best performance, with a crystal structure showing long-range order, due to the more suitable length of the 1,4-diaminobutane chain. The hole mobility estimated from hole-only devices based on isoindigo was enhanced from 1.24 × 10-6 cm2 V-1 s-1 to 7.28 × 10-4 cm2 V-1 s-1 as a result of the inclusion of this crosslinker, due to the formation of stronger interactions between the molecules.

Synthesis and photophysical properties of N-alkyl dithieno[3,2-b:2',3'-d]pyrrole based donor/acceptor-π-conjugated copolymers for solar-cell application.

Two kinds of donor-acceptor π-conjugated copolymer based on poly{[N-hexyl-dithieno(3,2-b:2',3'-d)pyrrole-2,6-diyl]alt-[isoindigo]} (PDTP-IID) and poly{[N-hexyl-dithieno(3,2-b:2',3'-d)pyrrole-2,6-diyl]alt-[thiazol-2,5-diyl]} (PDTP-Thz) were investigated. These copolymers were synthesized via a Stille coupling reaction. The results showed the structure-property relationships of different donor-acceptor (D-A) combinations. The polymer structures and photophysical properties were characterized by 1H NMR, TGA, DSC, UV-vis absorption spectroscopy, AFM, CV, and XRD measurement. Through UV-vis absorption and cyclic voltammetry (CV) measurements, it showed that the copolymers exhibit not only a low bandgap of 1.29 eV and 1.51 eV but also a deep highest occupied molecular orbital (HOMO) of -5.49 and -5.11 eV. Moreover, photovoltaic properties in combination with the fullerene derivatives were investigated. The device based on the copolymers with PC71BM exhibited higher maximum power conversion efficiency and higher maximum short-circuit current density of 0.23% with 1.64 mA cm-2 of PDTP-IID:PC71BM and 0.13% with 1.11 mA cm-2 of PDTP-Thz:PC71BM than those of the copolymers with PC61BM. Measurements performed for N-hexyl-dithieno(3,2-b:2',3'-d)pyrrole-based copolymers proved the potential of these polymers to be applied in optoelectronic applications.

Sequential structural degradation of red perovskite quantum dots and its prevention by introducing iodide at a stable gradient concentration into the core-shell red perovskite quantum dots.

Perovskite quantum dots (QDs) have been extensively studied as emissive materials for next-generation optoelectronics due to their outstanding optical properties; however, their structural instabilities, specifically those of red perovskite QDs, are critical obstacles in realizing operationally reliable perovskite QD-based optoelectronic devices. Accordingly, herein, we investigated the sequential degradation mechanism of red perovskite QDs upon their exposure to an electric field. Via electrical and chemical characterization, we demonstrated that degradation occurred in the following order: anion-defect-assisted halide migration, cation-defect-assisted migration of I-/Cs+ ions, defective gradient I ion distribution, structural distortion, and ion transport/I2 vaporization with defect proliferation. Among these steps, the defective gradient I ion distribution is the key process in the structural degradation of perovskite QDs. Based on our findings, we designed perovskite/SiO2 core-shell QDs with stable gradient I concentrations. Most notably, the operational stabilities of perovskite QD-light-emitting diodes (PeLEDs) fabricated using the perovskite/SiO2 core-shell QDs were approximately 5000 times those of the PeLEDs constructed using pristine perovskite QDs.

Synthesis of Chemically Stable Ultrathin SiO2-Coated Core-Shell Perovskite QDs via Modulation of Ligand Binding Energy for All-Solution-Processed Light-Emitting Diodes.

Recently, perovskite quantum dots (QDs) have attracted intensive interest due to their outstanding optical properties, but their extremely poor chemical stability hinders the development of the high-performance perovskite QD-based light-emitting diodes (PeLEDs). In this study, chemically stable SiO2-coated core-shell perovskite QDs are prepared to fabricate all-solution-processed PeLEDs. When the SiO2 shell thickness increases, the chemical stability of perovskite QDs is dramatically improved, while the charge injection efficiency is significantly decreased, which becomes the biggest obstacle for PeLED applications. Thus, controlling the SiO2 thickness is essential to obtain core-shell perovskite QDs optimal for PeLEDs in an aspect of chemical and optoelectrical properties. The 3-aminopropyl-triethoxysilane (APTES)/oleylamine (OAm) volume ratio is found to be a critical factor for obtaining an ultrathin SiO2 shell. Optimization of the APTES/OAm ratio affords A-site-doped CsPbBr3 QDs with an ultrathin SiO2 shell (A-CsPbBr3@SiO2 QDs) that exhibit longer radiative lifetimes and smaller shallow trap fraction than those without A-site doping, resulting in a higher photoluminescence quantum yield. A-CsPbBr3@SiO2 QDs also demonstrate long-term superior chemical stability in polar solvents without loss of optical properties due to passivation by the SiO2 shell and less defects via A-site doping. Consequently, all-solution-processed PeLED is successfully fabricated under ambient conditions, facilitating perovskite QD utilization in low-cost, large-area, flexible next-generation displays.