Elastomeric transistor stamps: reversible probing of charge transport in organic crystals.

We introduce a method to fabricate high-performance field-effect transistors on the surface of freestanding organic single crystals. The transistors are constructed by laminating a monolithic elastomeric transistor stamp against the surface of a crystal. This method, which eliminates exposure of the fragile organic surface to the hazards of conventional processing, enables fabrication of rubrene transistors with charge carrier mobilities as high as approximately 15 cm2/V.s and subthreshold slopes as low as 2nF.V/decade.cm2. Multiple relamination of the transistor stamp against the same crystal does not affect the transistor characteristics; we exploit this reversibility to reveal anisotropic charge transport at the basal plane of rubrene.

Interfacial chemistries for nanoscale transfer printing.

We describe a patterning technique that uses self-assembled monolayers and other surface chemistries for guiding the transfer of material from relief features on a stamp to a substrate. This purely additive contact printing technique is capable of nanometer resolution. Pattern transfer is fast and it occurs at ambient conditions. We illustrate the versatility of this method by printing single-layer metal patterns with feature sizes from a few tens of microns to a few tens of nanometers. We also demonstrate its use for patterning, in a single step, metal/dielectric/metal multilayers for functional thin film capacitors on plastic substrates.