Electric control of magnetization in an amorphous Co-Fe-Ta-B-O film by resistive switching.

Electric control of magnetism by resistive switching is a simple and efficient approach to manipulate magnetism. However, the mechanism of magnetism manipulation by resistive switching is not well understood. Detailed characterization was performed to investigate the mechanism of magnetization changes with resistance state. We achieved a reversible and nonvolatile control of magnetization in a Co-Fe-Ta-B-O film at room temperature by resistive switching. It is found that a higher saturation magnetization could be attributed to the formation of a conducting filament rich in the reductive state of iron when the device is switched to low resistance. This work might provide a new insight to achieve magnetoelectric coupling.

Reconfigurable Magnetic Logic Combined with Nonvolatile Memory Writing.

In magnetic logic, four basic Boolean logic operations can be programmed by a magnetic bit at room temperature with a high output ratio (>103 %). In the same clock cycle, benefiting from the built-in spin Hall effect, logic results can be directly written into magnetic bits using an all-electric method.

Extremely Large Magnetoresistance at Low Magnetic Field by Coupling the Nonlinear Transport Effect and the Anomalous Hall Effect.

The anomalous Hall effect of a magnetic material is coupled to the nonlinear transport effect of a semiconductor material in a simple structure to achieve a large geometric magnetoresistance (MR) based on a diode-assisted mechanism. An extremely large MR (>10(4) %) at low magnetic fields (1 mT) is observed at room temperature. This MR device shows potential for use as a logic gate for the four basic Boolean logic operations.