A highly integrated nonvolatile bidirectional RFET with low leakage current.

A highly integrated nonvolatile bidirectional reconfigurable FET controlled by a single gate (SGCN-BRFET) is proposed. The nonvolatile function, the bidirectional function and the reconfigurable function can be achieved at the same time. Instead of the independently powered program gate (PG) of BRFET, the program operation of the proposed SGCN-BRFET can be independently completed by the control gate (CG) itself through storing positive or negative charges in a floating program gate (FPG) formed on both source/drain sides. Thereafter, the interconnection can be simplified. The conduction type of the SGCN-BRFET is reconfigured by programming the FPG with different type of charges into the FPG. By optimizing the quantities of the stored charges, the FPG effective voltage can be changed to achieve higher forward current and lower leakage current. The physical mechanism of the proposed SGCN-RFET has been systematically analyzed. The device performance has been compared with BRFET. The influence of the amount of charge to the device performance has also been discussed in detail.

Complementary Doped Source-Based Reconfigurable Schottky Diode as an Equivalence Logic Gate.

A complementary doped source-based reconfigurable Schottky diode (CDS-RSD) is proposed for the first time. Unlike other types of reconfigurable devices that have source and drain (S/D) regions with the same material, this has a complementary doped source region as well as a metal silicide drain region. Compared to three-terminal reconfigurable transistors, which have both the program gate and control gate, the proposed CDS-RSD does not have a control gate but only a program gate for reconfiguration operation. The drain electrode of the CDS-RSD is not only the output terminal of the current signal but also the input terminal of the voltage signal. Therefore, it is a reconfigurable diode based on high Schottky barriers for both the conduction band and valence band of silicon, which formed on the interface between the silicon and drain electrode. Therefore, the CDS-RSD can be regarded as the simplification of the reconfigurable field effect transistor structure on the premise of retaining the reconfigurable function. The simplified CDS-RSD is more suitable for the improvement of logic gate circuit integration. A brief manufacture process is also proposed. The device performance has been verified through device simulation. The performance of the CDS-RSD as a single-device two-input equivalence logic gate has also been investigated.

A complementary low-Schottky-barrier S/D-based nanoscale dopingless bidirectional reconfigurable field effect transistor with an improved forward current.

In this paper, a nanoscale dopingless bidirectional RFET (BRFET) is proposed. Unlike conventional BRFETs, the proposed BRFET uses two different metal materials to form two different types of Schottky barriers on the interface between the S/D and silicon. For one of the two metal forms, the Schottky barrier height between the conduction band of the semiconductor and one of the two metal materials is lower than half of the energy band gap. The Schottky barrier height between the valence band of the semiconductor and the other kind of the two metal materials is lower than half of the energy band gap of the semiconductor. Therefore, a complementary low Schottky barrier (CLSB) is formed. Therefore, more carriers from the source electrode can easily flow into the semiconductor region through thermionic emission in both n-mode and p-mode compared to conventional BRFET operation, which generates carriers through the band-to-band tunneling effect. Therefore, a larger forward current can be achieved by the proposed CLSB-BRFET. The performance of the CLSB-BRFET is investigated by device simulation and compared with that of the BRFET. The working principle is interpreted through an analysis based on energy band theory. The output characteristics and reconfigurable function are also investigated and verified.

A nonvolatile bidirectional reconfigurable FET based on S/D self programmable floating gates.

A nanoscale nonvolatile bidirectional reconfigurable field effect transistor (NBRFET) based on source /drain (S/D) self programmable floating gates is proposed. Comparing to the conventional reconfigurable field effect transistor (RFET) which requires two independently powered gates, the proposed NBRFET requires only one control gate. Beside, S/D floating gates are introduced. Reconfigurable function is realized by programming different types of charges into the S/D floating gates through biasing the gate at a positive or negative high voltage. The effective voltages of the S/D floating gates are determined jointly by the quantity of the charge stored in the S/D floating gates and the gate voltage. In addition, the charge stored in the floating gate has an effect of reducing the energy band bending near the source/drain regions when the gate is reversely biased, thereafter, the band to band tunneling (BTBT) leakage current can be largely decreased. The scale of the proposed NBRFET can be reduced to nanometer level. The device performances such as the transfer and output characteristics are verified by device simulation, which proves that the proposed NBRFET has very good performance in the nanometer scale.

A highly sensitive vertical plug-in source drain high Schottky barrier bilateral gate controlled bidirectional tunnel field effect transistor.

In this article, we propose a highly sensitive vertically plug-in source drain contacts high Schottky barrier based bilateral gate and assistant gate controlled bidirectional tunnel field Effect transistor (VPISDC-HSB-BTFET). It can achieve much more sensitive forward current driving ability than the previously proposed High Schottky barrier source/drain contacts based bilateral gate and assistant Gate controlled bidirectional tunnel field Effect transistor (HSB-BTFET). Silicon body of the proposed VPISDC-HSB-BTFET is etched into a U-shaped structure. By etching both sides of the silicon body to form vertically plug-in source drain contacts, the source and drain electrodes are plugged into a certain height of the vertical parts of both sides of the U-shaped silicon body. Thereafter, the efficient area of the band-to-band tunneling generation region near the source drain contacts is significantly increased, so as to achieve sensitive ON-state current driving ability. Comparing to the mainstream FinFET technology, lower subthreshold swing, lower static power consumption and Higher Ion-Ioff ratio can be achieved.

A dual doping nonvolatile reconfigurable FET.

In this work, we propose a dual doping based nonvolatile reconfigurable field effect transistor with source/drain (S/D) charge storage layers (DDN R-FET). It introduces nonvolatile charge storage layers on both source and drain sides as a floating program gate (FPG) instead of a program gate (PG) that needs independent power supply. The stored charges in the FPG are programmed by the control gate (CG). Therefore, the proposed DDN R-FET essentially requires only one independently powered gate to complete the reconfigurable operation. Moreover, by adjusting the charge stored in the FPGs, the CG can regulate the equivalent voltage in the FPG, which can promote the on-state current and reduce the generation of reversely biased leakage current at the same time. The physical mechanism has also been analyzed in details.

A novel high-low-high Schottky barrier based bidirectional tunnel field effect transistor.

In this work, we proposed a novel High-Low-High Schottky barrier bidirectional tunnel field effect transistor (HLHSB-BTFET). Compared with previous technology which is named as High Schottky barrier BTFET (HSB-BTFET), the proposed HLHSB-BTFET requires only one gate electrode with independent power supply. More importantly, take an N type HLHSB-BTFET as an example, different from the previously proposed HSB-BTFET, due to that the effective potential of the central metal is increased with the increasing of drain to source voltage (Vds), built-in barrier heights maintain at the same value when the Vds is increased. Therefore, there is no strong dependence between built-in barrier heights formed in the semiconductor region on the drain side and the Vds. Besides that low Schottky barrier formed on the interface between the conduction band of silicon regions on its both sides and the central metal (while high Schottky barrier formed between the valence band of silicon regions on its both sides and the central metal) have been designed for preventing the carriers in valence band from flowing into the central metal induced by thermionic emission effect. Thereafter, the proposed N type HLHSB-BTFET has a natural blocking effect on the carriers flowing in valence band, and this blocking effect is not significantly degraded with the increasing of Vds, which is a huge promotion from the previous technology. The comparison between the two technologies is carried out, which exactly agrees with the design assumptions.

Cytotoxic Effects of Castalin Nanoparticles Against Osteosarcoma.

The size-dependent bioactivities of castalin were analyzed by comparing the cytotoxic effects of native castalin and castalin nanoparticles on osteosarcoma in vitro and in vivo. In vitro experiments indicated that castalin nanoparticles induced apoptosis of an osteosarcoma cell line more efficiently than native castalin. The more potent effects of castalin nanoparticles, relative to native castalin, were confirmed in vivo using a xenograft osteosarcoma model. Caco-2 cell transport studies showed that permeation of castalin nanoparticles was higher than native castalin. The higher bioactivity and superior bioavailability of castalin nanoparticles could potentially be utilised to develop novel therapies for osteosarcoma.

Rational Design of a Triple Tumor Microenvironment-Responsive Nanoplatform for Enhanced Tumor Theranostics.

The development of responsive nanoplatforms based on the tumor microenvironment (TME) is critical for tumor diagnosis and treatment. Concentrating on a single TME-responsive nanoplatform, however, may result in insufficient diagnostic accuracy and treatment efficacy. Herein, layered double-hydroxides (LDHs) and rare earth nanomaterials (Er@Lu) were combined to create a triple TME-responsive nanoplatform that was then modified with cypate (a fluorescent dye with strong absorbance) by a peptide chain and loaded with epigallocatechin gallate (EGCG), a chemotherapeutic drug. Multiple responses to TME occurred when Er@Lu/LDH-EGCG reached the colorectal tumor region. Based on an acidic TME, the nanoplatform cracked and released Ni2+ and EGCG. NiS, which was produced by the reaction of Ni2+ with abundant H2 S in tumor cells, was used for photothermal therapy and the released EGCG was used for chemotherapy. The MMP-7 enzyme specifically expressed in tumor cells recognized and cut the peptide chain, resulting in cypate release. The fluorescence of the Er@Lu was then restored along with the release of cypate because of the absorption competition disappearance. Compared to a single TME response, Er@Lu/LDH-EGCG with a triple TME response led to a better synergistic therapeutic effect in vitro and in vivo. This work has provided new approaches for developing multiple TME-responsive therapeutic nanoplatforms for synergistic therapy with improved diagnosis and therapeutic efficiency.

Dieckol exerts anticancer activity in human osteosarcoma (MG-63) cells through the inhibition of PI3K/AKT/mTOR signaling pathway.

BACKGROUND: Osteosarcoma (OS) is the most common malignant bone cancer with more metastasis and increased occurrence in children and teen-agers and being responsible for more number of morbidity and mortality worldwide. OBJECTIVE: The current exploration was planned study the in vitro anticancer actions of dieckol against human OS MG-63 cells via PI3K/AKT/mTOR signaling inhibition. METHODOLOGY: The cytotoxicity of dieckol was scrutinized by MTT assay. Effects of dieckol on the ROS accumulation, apoptotic cell death, and MMP level in the MG-63 cells were studied by respective fluorescence staining assays. The levels of proliferative, inflammatory, and apoptotic markers in the dieckol treated MG-63 cells were scrutinized by marker specific kits. The expressions of PI3K, AKT, and mTOR was assayed by RT-PCR. RESULTS: The MTT assay revealed that the dieckol dose dependently prevented MG-63 cells viability and the IC50 was found at 15 µM. Dieckol treatment effectively reduced the MMP level and improved the ROS generation and apoptosis in MG-63 cells. Dieckol also regulated the proliferative (cyclin D1), inflammatory (COX-2, IL-6, TNF-α, and NF-κB), and apoptotic (caspase-3, Bax, Bcl-2) markers in the MG-63 cells. The PI3K/AKT/mTOR signaling in the MG-63 cells were effectively inhibited by the dieckol treatment. CONCLUSION: In conclusion, our findings from this study recommends that the dieckol could be a talented anticancer candidate for the OS management in the future.

CT45A1 promotes the metastasis of osteosarcoma cells in vitro and in vivo through ß-catenin.

Increased expression of cancer/testis antigens (CTAs) is reported in various tumors. However, the unique role of CTAs in tumor genesis has not yet been verified. Here, we first report the functional role of CT45A1 in the carcinogenesis of osteosarcoma. RNA sequencing and immunohistochemistry confirmed that elevated expression of CT45A1 was detected in osteosarcoma, especially in metastatic tissues of osteosarcoma. Furthermore, osteosarcoma patients with poorer prognosis showed high expression of CT45A1. In cell tests, CT45A1 overexpression was shown to strengthen the proliferation, migration, and invasion abilities of osteosarcoma cells, while silencing CT45A1 markedly elicited the opposite effects in these tests by disrupting the activation of ß-catenin. In summary, we identify a novel role of CT45A1 in osteosarcoma. Furthermore, our results suggested that CT45A1 may contribute to the development of osteosarcoma and could be a possible therapeutic target for osteosarcoma patients.

Serum amyloid A promotes osteosarcoma invasion via upregulating αvß3 integrin.

Serum amyloid A (SAA) is regarded as an important acute phase protein involved in tumor progression and metastasis. However, at present there is no evidence of its involvement in osteosarcoma. The present study aimed to investigate the effect of SAA on the invasion of osteosarcoma cells. The effects of SAA on the migration and invasion of osteosarcoma cells were detected using scratch wound healing and transwell assays, respectively. The expression of αvß3 integrin was detected at the protein and mRNA levels in U2OS cells. Agonists, inhibitors or siRNA of formyl peptide receptor like­1 (FPRL­1), mitogen­activated protein kinases and αvß3 integrin were used to investigate the mechanism underlying the effects of SAA on the regulation of U2OS cell migration and invasion. The present study revealed that SAA promoted osteosarcoma cell migration and invasion. SAA upregulated the expression of αvß3 integrin in a concentration­ and time­dependent manner. When inhibiting αvß3 integrin with its antagonist, the migration and invasion abilities of the U2OS cells were markedly inhibited. SAA­induced αvß3 integrin production was significantly downregulated by inhibiting FPRL­1 with siRNA and inhibitors. The present study also found that extracellular signal­regulated kinase (ERK) 1/2, but not c­Jun N­terminal kinase or p38, was important in this process. These findings demonstrated that SAA regulated osteosarcoma cell migration and invasion via the FPRL­1/ERK/αvß3 integrin pathway.