Investigation of Ripple Formation on Surface of Silicon by Low-Energy Gallium Ion Bombardment.

Regular wave patterns were created by a 2 kV gallium ion on Si(111) monocrystals at incidence angles between 60° and 80° with respect to the surface normal. The characteristic wavelength and surface roughness of the structured surfaces were determined to be between 35-75 nm and 0.5-2.5 nm. The local slope distribution of the created periodic structures was also studied. These topography results were compared with the predictions of the Bradley-Harper model. The amorphised surface layers were investigated by a spectroscopic ellipsometer. According to the results, the amorphised thicknesses were changed in the range of 8 nm to 4 nm as a function of ion incidence angles. The reflectance of the structured surfaces was simulated using ellipsometric results and measured with a reflectometer. Based on the spectra, a controlled modification of reflectance within 45% and 50% can be achieved on Si(111) at 460 nm wavelength. According to the measured results, the characteristic sizes (periodicity and amplitude) and optical property of silicon can be fine-tuned by low-energy focused ion irradiation at the given interval of incidence angles.

Effect of Bias Potential on the Interface of a Solid Electrolyte and Electrode during XPS Depth Profiling Analysis.

Depth profiling is an essential method to investigate the physical and chemical properties of a solid electrolyte and electrolyte/electrode interface. In conventional depth profiling, various spectroscopic tools such as X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS) are utilized to monitor the chemical states along with ion bombardment to etch a sample. Nevertheless, the ion bombardment during depth profiling results in an inevitable systematic error, i.e., the accumulation of mobile ions at the electrolyte/electrode interface, known as the ion pile-up phenomenon. Here, we propose a novel method using bias potential, the substrate-bias method, to prevent the ion pile-up phenomena during depth profiling of a solid electrolyte. When the positive bias potential is applied on the substrate (electrode), the number of accumulating ions at the electrolyte/electrode interface is significantly reduced. The in-depth XPS analysis with the biased electrode reveals not only the suppression of the ion pile-up phenomena but also the altered chemical states at the interfacial region between the electrolyte and electrode depending on the bias. The proposed substrate-bias method can be a good alternative scheme for an efficient yet precise depth profiling technique for a solid electrolyte.

Combined Funnel, Concentrator, and Particle Valve Functional Element for Magnetophoretic Bead Transport Based on Engineered Magnetic Domain Patterns.

Controlled actuation of superparamagnetic beads (SPBs) within a microfluidic environment using tailored dynamic magnetic field landscapes (MFLs) is a potent approach for the realization of point-of-care diagnostics within Lab-on-a-chip (LOC) systems. Making use of an engineered magnetic domain pattern as the MFL source, a functional LOC-element with combined magnetophoretic "funnel", concentrator, and "valve" functions for micron-sized SPBs is presented. A parallel-stripe domain pattern design with periodically decreasing/increasing stripe lengths is fabricated in a topographically flat continuous exchange biased (EB) thin film system by ion bombardment induced magnetic patterning (IBMP). It is demonstrated that, upon application of external magnetic field pulses, a fully reversible concentration of SPBs at the domain pattern's focal point occurs. In addition, it is shown that this functionality may be used as an SPB "funnel", allowing only a maximum number of particles to pass through the focal point. Adjusting the pulse time length, the focal point can be clogged up for incoming SPBs, resembling an on/off switchable particle "valve". The observations are supported by quantitative theoretical force considerations.

Ultralow-energy amorphization of contaminated silicon samples investigated by molecular dynamics.

Ion beam processes related to focused ion beam milling, surface patterning, and secondary ion mass spectrometry require precision and control. Quality and cleanliness of the sample are also crucial factors. Furthermore, several domains of nanotechnology and industry use nanoscaled samples that need to be controlled to an extreme level of precision. To reduce the irradiation-induced damage and to limit the interactions of the ions with the sample, low-energy ion beams are used because of their low implantation depths. Yet, low-energy ion beams come with a variety of challenges. When such low energies are used, the residual gas molecules in the instrument chamber can adsorb on the sample surface and impact the ion beam processes. In this paper we pursue an investigation on the effects of the most common contaminant, water, sputtered by ultralow-energy ion beams, ranging from 50 to 500 eV and covering the full range of incidence angles, using molecular dynamics simulations with the ReaxFF potential. We show that the expected sputtering yield trends are maintained down to the lowest sputtering yields. A region of interest with low damage is obtained for incidence angles around 60° to 75°. We also demonstrate that higher energies induce a larger removal of the water contaminant and, at the same time, induce an increased amorphization, which leads to a trade-off between sample cleanliness and damage.

Highly efficient sequestration of aqueous lead on nanostructured calcite substrates.

Following defocused ion beam sputtering, large area highly corrugated and faceted nanoripples are formed on calcite (10.4) faces in a self-organized fashion. High resolution atomic force microscopy (AFM) imaging reveals that calcite ripples are defined by facets with highly kinked (11.0) and (21¯.12) terminations.In situAFM imaging during the exposure of such modified calcite surfaces to PbCl2aqueous solution reveals that the nanostructured calcite surface promotes the uptake of Pb. In addition, we observed the progressive smoothing of the highly reactive calcite facet terminations and the formation of Pb-bearing precipitates elongated in registry with the underlying nanopattern. By SEM-EDS analysis we quantified a remarkable 500% increase of the Pb uptake rate, up to 0.5 atomic weight % per hour, on the nanorippled calcite in comparison to its freshly cleaved (10.4) surfaces. These results suggest that nanostructurated calcite surfaces can be used for developing future systems for lead sequestration from polluted waters.

Toward Perfect Surfaces of Transition Metal Dichalcogenides with Ion Bombardment and Annealing Treatment.

Layered transition metal dichalcogenides (TMDs) are two-dimensional materials exhibiting a variety of unique features with great potential for electronic and optoelectronic applications. The performance of devices fabricated with mono or few-layer TMD materials, nevertheless, is significantly affected by surface defects in the TMD materials. Recent efforts have been focused on delicate control of growth conditions to reduce the defect density, whereas the preparation of a defect-free surface remains challenging. Here, we show a counterintuitive approach to decrease surface defects on layered TMDs: a two-step process including Ar ion bombardment and subsequent annealing. With this approach, the defects, mainly Te vacancies, on the as-cleaved PtTe2 and PdTe2 surfaces were decreased by more than 99%, giving a defect density <1.0 × 1010 cm-2, which cannot be achieved solely with annealing. We also attempt to propose a mechanism behind the processes.

Can One Series of Self-Organized Nanoripples Guide Another Series of Self-Organized Nanoripples during Ion Bombardment: From the Perspective of Power Spectral Density Entropy?

Ion bombardment (IB) is a promising nanofabrication tool for self-organized nanostructures. When ions bombard a nominally flat solid surface, self-organized nanoripples can be induced on the irradiated target surface, which are called intrinsic nanoripples of the target material. The degree of ordering of nanoripples is an outstanding issue to be overcome, similar to other self-organization methods. In this study, the IB-induced nanoripples on bilayer systems with enhanced quality are revisited from the perspective of guided self-organization. First, power spectral density (PSD) entropy is introduced to evaluate the degree of ordering of the irradiated nanoripples, which is calculated based on the PSD curve of an atomic force microscopy image (i.e., the Fourier transform of the surface height. The PSD entropy can characterize the degree of ordering of nanoripples). The lower the PSD entropy of the nanoripples is, the higher the degree of ordering of the nanoripples. Second, to deepen the understanding of the enhanced quality of nanoripples on bilayer systems, the temporal evolution of the nanoripples on the photoresist (PR)/antireflection coating (ARC) and Au/ARC bilayer systems are compared with those of single PR and ARC layers. Finally, we demonstrate that a series of intrinsic IB-induced nanoripples on the top layer may act as a kind of self-organized template to guide the development of another series of latent IB-induced nanoripples on the underlying layer, aiming at improving the ripple ordering. The template with a self-organized nanostructure may alleviate the critical requirement for periodic templates with a small period of ~100 nm. The work may also provide inspiration for guided self-organization in other fields.

Spectromicroscopy Study of Induced Defects in Ion-Bombarded Highly Aligned Carbon Nanotubes.

Highly aligned multi-wall carbon nanotubes were investigated with scanning electron microscopy (SEM), Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) before and after bombardment performed using noble gas ions of different masses (argon, neon and helium), in an ultra-high-vacuum (UHV) environment. Ion irradiation leads to change in morphology, deformation of the carbon (C) honeycomb lattice and different structural defects in multi-wall carbon nanotubes. One of the major effects is the production of bond distortions, as determined by micro-Raman and micro-X-ray photoelectron spectroscopy. We observe an increase in sp3 distorted bonds at higher binding energy with respect to the expected sp2 associated signal of the carbon 1s core level, and increase in dangling bonds. Furthermore, the surface damage as determined by the X-ray photoelectron spectroscopy carbon 1s core level is equivalent upon bombarding with ions of different masses, while the impact and density of defects in the lattice of the MWCNTs as determined by micro-Raman are dependent on the bombarding ion mass; heavier for helium ions, lighter for argon ions. These results on the controlled increase in sp3 distorted bonds, as created on the multi-wall carbon nanotubes, open new functionalization prospects to improve and increase atomic hydrogen uptake on ion-bombarded multi-wall carbon nanotubes.

Stability of Wafer-Scale Thin Films of Vertically Aligned Hexagonal BN Nanosheets Exposed to High-Energy Ions and Reactive Atomic Oxygen.

Stability of advanced functional materials subjected to extreme conditions involving ion bombardment, radiation, or reactive chemicals is crucial for diverse applications. Here we demonstrate the excellent stability of wafer-scale thin films of vertically aligned hexagonal BN nanosheets (hBNNS) exposed to high-energy ions and reactive atomic oxygen representative of extreme conditions in space exploration and other applications. The hBNNS are fabricated catalyst-free on wafer-scale silicon, stainless steel, copper and glass panels at a lower temperature of 400 °C by inductively coupled plasma (ICP) assisted chemical vapor deposition (CVD) and subsequently characterized. The resistance of BNNS to high-energy ions was tested by immersing the samples into the plasma plume at the anode of a 150 W Hall Effect Thruster with BNNS films facing Xenon ions, revealing that the etching rate of BNNS is 20 times less than for a single-crystalline silicon wafer. Additionally, using O2/Ar/H2 plasmas to simulate the low Earth orbit (LEO) environment, it is demonstrated that the simulated plasma had very weak influence on the hBNNS surface structure and thickness. These results validate the strong potential of BNNS films for applications as protective, thermally conductive and insulating layers for spacecrafts, electric plasma satellite thrusters and semiconductor optoelectronic devices.

Influence of water contamination on the sputtering of silicon with low-energy argon ions investigated by molecular dynamics simulations.

Focused ion beams (FIB) are a common tool in nanotechnology for surface analysis, sample preparation for electron microscopy and atom probe tomography, surface patterning, nanolithography, nanomachining, and nanoprinting. For many of these applications, a precise control of ion-beam-induced processes is essential. The effect of contaminations on these processes has not been thoroughly explored but can often be substantial, especially for ultralow impact energies in the sub-keV range. In this paper we investigate by molecular dynamics (MD) simulations how one of the most commonly found residual contaminations in vacuum chambers (i.e., water adsorbed on a silicon surface) influences sputtering by 100 eV argon ions. The incidence angle was changed from normal incidence to close to grazing incidence. For the simulation conditions used in this work, the adsorption of water favours the formation of defects in silicon by mixing hydrogen and oxygen atoms into the substrate. The sputtering yield of silicon is not significantly changed by the contamination, but the fraction of hydrogen and oxygen atoms that is sputtered largely depends on the incidence angle. This fraction is the largest for incidence angles between 70 and 80° defined with respect to the sample surface. Overall, it changes from 25% to 65%.