Mechanism of boron diffusion in amorphous silicon.

ABSTRACT

We have elucidated the mechanism for B migration in the amorphous (a-) Si network. B diffusivity in a-Si is much higher than in crystalline Si; it is transient and increases with B concentration up to 2 x 10(20) B/cm(3). At higher density, B atoms in a-Si quickly precipitate. B diffusion is indirect, mediated by dangling bonds (DB) present in a-Si. The density of DB is enhanced by B accommodation in the a-Si network and decreases because of a-Si relaxation. Accurate data simulations allow one to extract the DB diffusivity, whose activation energy is 2.6 eV. Implications of these results are discussed.