Strain relief guided growth of atomic nanowires in a Cu3N-Cu(110) molecular network.
Phys Rev Lett
; 102(20): 205503, 2009 May 22.
Article
en En
| MEDLINE
| ID: mdl-19519040
ABSTRACT
A self-corrugated Cu(3)N-Cu(110) molecular network shows the potential to overcome the element dependence barrier as demonstrated by epitaxial growth of atomic nanowires (approximately 1 nm in width) among various 3d, 4d, and 5d elements. Scanning tunneling microscopy shows that all of the investigated atomic nanowires share an identical structure, featuring uniform width, height, orientation and the same minimum separation distance. Ab initio study reveals that the formation mechanism of atomic nanowires can be directly attributed to a strain relief guided asymmetric occupation of atoms on the originally symmetric crest zone of the corrugated network.
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Colección:
01-internacional
Base de datos:
MEDLINE
Idioma:
En
Revista:
Phys Rev Lett
Año:
2009
Tipo del documento:
Article
País de afiliación:
Alemania