Effect of non-lattice oxygen on ZrO2-based resistive switching memory.
Nanoscale Res Lett
; 7(1): 187, 2012 Mar 14.
Article
en En
| MEDLINE
| ID: mdl-22416817
ABSTRACT
ZrO2-based resistive switching memory has attracted much attention according to its possible application in the next-generation nonvolatile memory. The Al/ZrO2/Pt resistive switching memory with bipolar resistive switching behavior is revealed in this work. The thickness of the ZrO2 film is only 20 nm. The device yield improved by the non-lattice oxygen existing in the ZrO2 film deposited at room temperature is firstly proposed. The stable resistive switching behavior and the long retention time with a large current ratio are also observed. Furthermore, it is demonstrated that the resistive switching mechanism agrees with the formation and rupture of a conductive filament in the ZrO2 film. In addition, the Al/ZrO2/Pt resistive switching memory is also possible for application in flexible electronic equipment because it can be fully fabricated at room temperature.
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01-internacional
Base de datos:
MEDLINE
Idioma:
En
Revista:
Nanoscale Res Lett
Año:
2012
Tipo del documento:
Article
País de afiliación:
Taiwán