Highly air-stable phosphorus-doped n-type graphene field-effect transistors.
Adv Mater
; 24(40): 5481-6, 2012 Oct 23.
Article
en En
| MEDLINE
| ID: mdl-22886822
ABSTRACT
Phosphorus-doped double-layered graphene field-effect transistors (PDGFETs) show much stronger air-stable n-type behavior than nitrogen-doped double-layered graphene FETs (NDGFETs), even under an oxygen atmosphere, due to strong nucleophilicity, which may lead to real applications for air-stable n-type graphene channels.
Texto completo:
1
Colección:
01-internacional
Base de datos:
MEDLINE
Asunto principal:
Fósforo
/
Transistores Electrónicos
/
Grafito
Idioma:
En
Revista:
Adv Mater
Asunto de la revista:
BIOFISICA
/
QUIMICA
Año:
2012
Tipo del documento:
Article