Leveraging crystal anisotropy for deterministic growth of InAs quantum dots with narrow optical linewidths.
Nano Lett
; 13(10): 4870-5, 2013 Oct 09.
Article
en En
| MEDLINE
| ID: mdl-23987910
ABSTRACT
Crystal growth anisotropy in molecular beam epitaxy usually prevents deterministic nucleation of individual quantum dots when a thick GaAs buffer is grown over a nanopatterned substrate. Here, we demonstrate how this anisotropy can actually be used to mold nucleation sites for single dots on a much thicker buffer than has been achieved by conventional techniques. This approach greatly suppresses the problem of defect-induced line broadening for single quantum dots in a charge-tunable device, giving state-of-the-art optical linewidths for a system widely studied as a spin qubit for quantum information.
Texto completo:
1
Colección:
01-internacional
Base de datos:
MEDLINE
Asunto principal:
Arsenicales
/
Anisotropía
/
Nanotecnología
/
Puntos Cuánticos
/
Indio
Idioma:
En
Revista:
Nano Lett
Año:
2013
Tipo del documento:
Article
País de afiliación:
Estados Unidos