Defect structure transformation after thermal annealing in a surface layer of Zn-implanted Si(001) substrates.

Shcherbachev, Kirill; Privezentsev, Vladimir; Kulikauskas, Vaclav; Zatekin, Vladimir; Saraykin, Vladimir

Shcherbachev, Kirill; Privezentsev, Vladimir; Kulikauskas, Vaclav; Zatekin, Vladimir; Saraykin, Vladimir.

Afiliación

Shcherbachev K; Semiconductor and Dielectric Materials Science, National University of Science and Technology 'MISIS' , Leninskii prospekt, Moscow, 119049, Russian Federation.

J Appl Crystallogr ; 46(Pt 4): 882-886, 2013 Aug 01.

Article en En | MEDLINE | ID: mdl-24046492

Palabras clave

X-ray diffraction; ion implantation; radiation-induced defects; silicon

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: J Appl Crystallogr Año: 2013 Tipo del documento: Article