Lateral MoS2 p-n junction formed by chemical doping for use in high-performance optoelectronics.

Choi, Min Sup; Qu, Deshun; Lee, Daeyeong; Liu, Xiaochi; Watanabe, Kenji; Taniguchi, Takashi; Yoo, Won Jong

Choi, Min Sup; Qu, Deshun; Lee, Daeyeong; Liu, Xiaochi; Watanabe, Kenji; Taniguchi, Takashi; Yoo, Won Jong.

Afiliación

Choi MS; SKKU Advanced Institute of Nano-Technology (SAINT), Center for Human Interface Nano Technology (HINT), and §Samsung-SKKU Graphene Center (SSGC), Sungkyunkwan University , 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 440-746, Korea .

ACS Nano ; 8(9): 9332-40, 2014 Sep 23.

Article en En | MEDLINE | ID: mdl-25131298

Palabras clave

chemical doping; homogeneous p−n junction; lateral junction; molybdenum disulfide; optoelectronics; two-dimensional materials

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: ACS Nano Año: 2014 Tipo del documento: Article