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Manipulating semiconductor colloidal stability through doping.
Fleharty, Mark E; van Swol, Frank; Petsev, Dimiter N.
Afiliación
  • Fleharty ME; Nanoscience and Microsystems Program, University of New Mexico, Albuquerque, New Mexico 87131, USA and Department of Chemical and Biological Engineering, University of New Mexico, Albuquerque, New Mexico 87131, USA.
  • van Swol F; Department of Chemical and Biological Engineering, University of New Mexico, Albuquerque, New Mexico 87131, USA and Sandia National Laboratories, Albuquerque, New Mexico 87185, USA.
  • Petsev DN; Department of Chemical and Biological Engineering, University of New Mexico, Albuquerque, New Mexico 87131, USA.
Phys Rev Lett ; 113(15): 158302, 2014 Oct 10.
Article en En | MEDLINE | ID: mdl-25375747
ABSTRACT
The interface between a doped semiconductor material and electrolyte solution is of considerable fundamental interest, and is relevant to systems of practical importance. Both adjacent domains contain mobile charges, which respond to potential variations. This is exploited to design electronic and optoelectronic sensors, and other enabling semiconductor colloidal materials. We show that the charge mobility in both phases leads to a new type of interaction between semiconductor colloids suspended in aqueous electrolyte solutions. This interaction is due to the electrostatic response of the semiconductor interior to disturbances in the external field upon the approach of two particles. The electrostatic repulsion between two charged colloids is reduced from the one governed by the charged groups present at the particles surfaces. This type of interaction is unique to semiconductor particles and may have a substantial effect on the suspension dynamics and stability.
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Colección: 01-internacional Base de datos: MEDLINE Asunto principal: Semiconductores / Coloides Idioma: En Revista: Phys Rev Lett Año: 2014 Tipo del documento: Article País de afiliación: Estados Unidos
Buscar en Google
Colección: 01-internacional Base de datos: MEDLINE Asunto principal: Semiconductores / Coloides Idioma: En Revista: Phys Rev Lett Año: 2014 Tipo del documento: Article País de afiliación: Estados Unidos
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