Investigation of CuGaSe<sub>2</sub>/CuInSe<sub>2</sub> double heterojunction interfaces grown by molecular beam epitaxy.

Thiru, Sathiabama; Asakawa, Masaki; Honda, Kazuki; Kawaharazuka, Atsushi; Tackeuchi, Atsushi; Makimoto, Toshiki; Horikoshi, Yoshiji

Investigation of CuGaSe₂/CuInSe₂ double heterojunction interfaces grown by molecular beam epitaxy.

Thiru, Sathiabama; Asakawa, Masaki; Honda, Kazuki; Kawaharazuka, Atsushi; Tackeuchi, Atsushi; Makimoto, Toshiki; Horikoshi, Yoshiji.

Afiliación

Asakawa M; School of Advanced Science and Engineering, Waseda University , 3-4-1, Okubo, Shinjuku, Tokyo 169-8555, JAPAN.
Honda K; School of Advanced Science and Engineering, Waseda University , 3-4-1, Okubo, Shinjuku, Tokyo 169-8555, JAPAN.
Kawaharazuka A; CREST, JST , 4-1-8, Honcho Kawaguchi, Saitama, 332-0012, JAPAN.
Tackeuchi A; School of Advanced Science and Engineering, Waseda University , 3-4-1, Okubo, Shinjuku, Tokyo 169-8555, JAPAN.

AIP Adv ; 5(2): 027120, 2015 Feb.

Article en En | MEDLINE | ID: mdl-25874158

ABSTRACT

ABSTRACT

In-situ reflection high-energy electron diffraction (RHEED) observation and X-ray diffraction measurements were performed on heterojunction interfaces of CuGaSe2/CnInSe2/CuGaSe2 grown on GaAs (001) using migration-enhanced epitaxy. The streaky RHEED pattern and persistent RHEED intensity oscillations caused by the alternate deposition of migration-enhanced epitaxy sequence are observed and the growths of smooth surfaces are confirmed. RHEED observation results also confirmed constituent material interdiffusion at the heterointerface. Cross-sectional transmission electron microscopy showed a flat and abrupt heterointerface when the substrate temperature is as low as 400 °C. These have been confirmed even by X-ray diffraction and photoluminescence measurements.

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: AIP Adv Año: 2015 Tipo del documento: Article