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Determination of formation and ionization energies of charged defects in two-dimensional materials.
Wang, Dan; Han, Dong; Li, Xian-Bin; Xie, Sheng-Yi; Chen, Nian-Ke; Tian, Wei Quan; West, Damien; Sun, Hong-Bo; Zhang, S B.
Afiliación
  • Wang D; State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China.
  • Han D; State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China.
  • Li XB; Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180, USA.
  • Xie SY; State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China.
  • Chen NK; State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China.
  • Tian WQ; State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China.
  • West D; State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China.
  • Sun HB; Institute of Theoretical Chemistry, Jilin University, Changchun 130012, China.
  • Zhang SB; Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180, USA.
Phys Rev Lett ; 114(19): 196801, 2015 May 15.
Article en En | MEDLINE | ID: mdl-26024189
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Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Phys Rev Lett Año: 2015 Tipo del documento: Article País de afiliación: China
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Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Phys Rev Lett Año: 2015 Tipo del documento: Article País de afiliación: China