Electronic transport properties of transition metal dichalcogenide field-effect devices: surface and interface effects.

Schmidt, Hennrik; Giustiniano, Francesco; Eda, Goki

Schmidt, Hennrik; Giustiniano, Francesco; Eda, Goki.

Afiliación

Schmidt H; Graphene Research Centre, National University of Singapore, 6 Science Drive 2, Singapore 117546 and Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542.
Giustiniano F; Graphene Research Centre, National University of Singapore, 6 Science Drive 2, Singapore 117546 and Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542.
Eda G; Graphene Research Centre, National University of Singapore, 6 Science Drive 2, Singapore 117546 and Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542.

Chem Soc Rev ; 44(21): 7715-36, 2015 Nov 07.

Article en En | MEDLINE | ID: mdl-26088725

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Chem Soc Rev Año: 2015 Tipo del documento: Article