The intrinsic origin of hysteresis in MoS2 field effect transistors.

Shu, Jiapei; Wu, Gongtao; Guo, Yao; Liu, Bo; Wei, Xianlong; Chen, Qing

Shu, Jiapei; Wu, Gongtao; Guo, Yao; Liu, Bo; Wei, Xianlong; Chen, Qing.

Afiliación

Shu J; Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing 100871, People's Republic of China. qingchen@pku.edu.cn and Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, China.
Wu G; Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing 100871, People's Republic of China. qingchen@pku.edu.cn.
Guo Y; Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing 100871, People's Republic of China. qingchen@pku.edu.cn.
Liu B; Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing 100871, People's Republic of China. qingchen@pku.edu.cn.
Wei X; Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing 100871, People's Republic of China. qingchen@pku.edu.cn.
Chen Q; Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing 100871, People's Republic of China. qingchen@pku.edu.cn.

Nanoscale ; 8(5): 3049-56, 2016 Feb 07.

Article en En | MEDLINE | ID: mdl-26782750

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nanoscale Año: 2016 Tipo del documento: Article País de afiliación: China